RU2017126041A3 - - Google Patents
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- RU2017126041A3 RU2017126041A3 RU2017126041A RU2017126041A RU2017126041A3 RU 2017126041 A3 RU2017126041 A3 RU 2017126041A3 RU 2017126041 A RU2017126041 A RU 2017126041A RU 2017126041 A RU2017126041 A RU 2017126041A RU 2017126041 A3 RU2017126041 A3 RU 2017126041A3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02466—Antimonides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14200021 | 2014-12-23 | ||
EP14200021.5 | 2014-12-23 | ||
PCT/NO2015/050261 WO2016105211A1 (en) | 2014-12-23 | 2015-12-23 | A method of epitaxial growth of a material interface between group iii-v materials and silicon wafers providing counterbalancing of residual strains |
Publications (3)
Publication Number | Publication Date |
---|---|
RU2017126041A RU2017126041A (ru) | 2019-01-25 |
RU2017126041A3 true RU2017126041A3 (ru) | 2019-06-04 |
RU2696352C2 RU2696352C2 (ru) | 2019-08-01 |
Family
ID=52146316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
RU2017126041A RU2696352C2 (ru) | 2014-12-23 | 2015-12-23 | Способ эпитаксиального выращивания границы раздела между материалами из iii-v групп и кремниевой пластиной, обеспечивающий нейтрализацию остаточных деформаций |
Country Status (8)
Country | Link |
---|---|
US (1) | US20170352536A1 (ru) |
EP (1) | EP3238229A1 (ru) |
JP (2) | JP6882980B2 (ru) |
KR (1) | KR20170095912A (ru) |
CN (1) | CN107278323B (ru) |
CA (1) | CA2971128C (ru) |
RU (1) | RU2696352C2 (ru) |
WO (1) | WO2016105211A1 (ru) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10249780B1 (en) * | 2016-02-03 | 2019-04-02 | Stc.Unm | High quality AlSb for radiation detection |
US11367802B2 (en) * | 2018-02-08 | 2022-06-21 | Alliance For Sustainable Energy, Llc | Two-junction photovoltaic devices |
NO20230297A1 (en) | 2022-03-22 | 2023-09-25 | Integrated Solar As | A method of manufacturing group III-V based semiconductor materials comprising strain relaxed buffers providing possibility for lattice constant adjustment when growing on (111)Si substrates |
CN117558644B (zh) * | 2023-12-21 | 2024-03-26 | 苏州焜原光电有限公司 | 标定InGaxAs/InAsSby超晶格组分的方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0296325A (ja) * | 1988-09-30 | 1990-04-09 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2557546B2 (ja) * | 1990-03-30 | 1996-11-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH06181174A (ja) * | 1991-04-12 | 1994-06-28 | Nec Corp | Si基板上へのIII−V族化合物半導体のヘテロエピタキシャル成長法 |
JPH06349733A (ja) * | 1993-06-11 | 1994-12-22 | Sumitomo Metal Ind Ltd | 化合物半導体基板及びその製造方法 |
JP3752810B2 (ja) * | 1997-11-26 | 2006-03-08 | 昭和電工株式会社 | エピタキシャルウェハおよびその製造方法並びに半導体素子 |
JP2003526203A (ja) * | 2000-03-02 | 2003-09-02 | アイクストロン、アーゲー | III族−N、(III−V)族−Nおよび金属−窒素の所定成分による層構造をSi基板上に作成する方法および装置 |
JP5093740B2 (ja) * | 2001-07-26 | 2012-12-12 | 株式会社Ihi | 半導体結晶膜の成長方法 |
JP2004128415A (ja) * | 2002-10-07 | 2004-04-22 | Toshiba Corp | トランジスタ、ウェーハ、トランジスタの製造方法、ウェーハの製造方法および半導体層の形成方法 |
JP2007088426A (ja) * | 2005-08-25 | 2007-04-05 | Furukawa Electric Co Ltd:The | 半導体電子デバイス |
US7928471B2 (en) * | 2006-12-04 | 2011-04-19 | The United States Of America As Represented By The Secretary Of The Navy | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor |
JP2009105231A (ja) * | 2007-10-24 | 2009-05-14 | Sony Corp | 半導体基板およびその製造方法、ならびに半導体装置 |
US8299351B2 (en) * | 2009-02-24 | 2012-10-30 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Epitaxial growth of III-V compounds on (111) silicon for solar cells |
NO20093193A1 (no) * | 2009-10-22 | 2011-04-26 | Integrated Solar As | Fremgangsmate for fremstilling av fotoelektriske solceller og en multifunksjonell solcelle |
JP2011254068A (ja) * | 2010-05-07 | 2011-12-15 | Sumitomo Chemical Co Ltd | 半導体基板 |
JP5672926B2 (ja) * | 2010-10-08 | 2015-02-18 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5495069B2 (ja) * | 2011-05-17 | 2014-05-21 | 古河電気工業株式会社 | 半導体素子及びその製造方法 |
US8916906B2 (en) * | 2011-07-29 | 2014-12-23 | Kabushiki Kaisha Toshiba | Boron-containing buffer layer for growing gallium nitride on silicon |
US8766619B2 (en) | 2011-08-22 | 2014-07-01 | Technical Services For Electronics, Inc. | Coax ribbonizing header |
WO2013026858A1 (en) * | 2011-08-22 | 2013-02-28 | Integrated Optoelectronics | A method for growing iii-v materials on a non iii-v material substrate comprising steps improving dislocation fault density of a finished material structure suitable for use in semiconductor manufacturing and semiconductor applications |
US9595438B2 (en) * | 2011-09-12 | 2017-03-14 | Nasp Iii/V Gmbh | Method for producing a III/V Si template |
US20150255668A1 (en) * | 2011-09-30 | 2015-09-10 | Microlink Devices, Inc. | Thin film inp-based solar cells using epitaxial lift-off |
JP2014175598A (ja) * | 2013-03-12 | 2014-09-22 | Asahi Kasei Corp | 化合物半導体積層体及び半導体装置 |
KR20140121192A (ko) * | 2013-04-05 | 2014-10-15 | 삼성전자주식회사 | 기판 구조체 및 이를 포함하는 반도체 소자 |
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2015
- 2015-12-23 KR KR1020177017952A patent/KR20170095912A/ko not_active Application Discontinuation
- 2015-12-23 JP JP2017534744A patent/JP6882980B2/ja active Active
- 2015-12-23 CA CA2971128A patent/CA2971128C/en active Active
- 2015-12-23 US US15/536,834 patent/US20170352536A1/en not_active Abandoned
- 2015-12-23 CN CN201580070931.1A patent/CN107278323B/zh active Active
- 2015-12-23 WO PCT/NO2015/050261 patent/WO2016105211A1/en active Application Filing
- 2015-12-23 EP EP15834680.9A patent/EP3238229A1/en not_active Ceased
- 2015-12-23 RU RU2017126041A patent/RU2696352C2/ru active
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2021
- 2021-01-28 JP JP2021011691A patent/JP2021073721A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20170095912A (ko) | 2017-08-23 |
EP3238229A1 (en) | 2017-11-01 |
CA2971128A1 (en) | 2016-06-30 |
WO2016105211A1 (en) | 2016-06-30 |
CA2971128C (en) | 2024-01-02 |
CN107278323A (zh) | 2017-10-20 |
JP6882980B2 (ja) | 2021-06-02 |
JP2021073721A (ja) | 2021-05-13 |
RU2017126041A (ru) | 2019-01-25 |
JP2018516448A (ja) | 2018-06-21 |
RU2696352C2 (ru) | 2019-08-01 |
US20170352536A1 (en) | 2017-12-07 |
CN107278323B (zh) | 2021-02-12 |