RU2016108626A - The structure of a crystalline silicon-based photoconverter and its production line - Google Patents

The structure of a crystalline silicon-based photoconverter and its production line Download PDF

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RU2016108626A
RU2016108626A RU2016108626A RU2016108626A RU2016108626A RU 2016108626 A RU2016108626 A RU 2016108626A RU 2016108626 A RU2016108626 A RU 2016108626A RU 2016108626 A RU2016108626 A RU 2016108626A RU 2016108626 A RU2016108626 A RU 2016108626A
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layer
type
photoconverter
layers
magnetron sputtering
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RU2016108626A
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Russian (ru)
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RU2632267C2 (en
Inventor
Евгений Иванович Теруков
Алексей Валерьевич Кукин
Илья Александрович Няпшаев
Дмитрий Львович Орехов
Алексей Станиславович Абрамов
Антон Александрович Базелей
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Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике при ФТИ им. А.Ф. Иоффе", ООО "НТЦ ТПТ"
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Claims (22)

1. Структура фотопреобразователя на основе кристаллического кремния, включающая:1. The structure of the crystalline silicon-based photoconverter, including: - текстурированную поликристаллическую или монокристаллическую пластину кремния;- textured polycrystalline or single crystal silicon wafer; - пассивирующий слой в виде аморфного гидрогенизированного кремния нанесенный на каждую сторону пластины кремния;- a passivating layer in the form of amorphous hydrogenated silicon deposited on each side of the silicon wafer; - p-слой;- p-layer; - n-слой;- n-layer; - контактные токосъемные слои в виде прозрачных проводящих оксидов;- contact slip layers in the form of transparent conductive oxides; - тыльный токосъемный слой в виде металлического непрозрачного проводящего слоя,- back current collector layer in the form of a metal opaque conductive layer, отличающаяся тем, чтоcharacterized in that в качестве p-слоя и n-слоя применяют металлические оксиды, соответственно, p-типа и n-типа, при этом слои n-типа и p-типа, пассивирующий и токосъемный слои, наносятся методом магнетронного распыления.metal oxides of p-type and n-type, respectively, are used as the p-layer and n-layer, while the n-type and p-type layers, passivating and current collecting layers, are deposited by magnetron sputtering. 2. Структура по п. 1, отличающаяся тем, что в качестве металлического оксида n-типа используют оксид цинка (ZnO) или SnO2, Fe2O3, TiO2, V2O7, MnO2, CdO или другие металлические оксиды n-типа.2. The structure according to claim 1, characterized in that zinc oxide (ZnO) or SnO 2 , Fe 2 O 3 , TiO 2 , V 2 O 7 , MnO 2 , CdO or other metal oxides are used as the n-type metal oxide n-type. 3. Структура по п. 1, отличающаяся тем, что в качестве металлического оксида p-типа используют MoO или CoO, Cu2O, NiO, Cr2O3 или другие металлические оксиды p-типа.3. The structure according to claim 1, characterized in that MoO or CoO, Cu 2 O, NiO, Cr 2 O 3 or other p-type metal oxides are used as the p-type metal oxide. 4. Линия по производству фотопреобразователя на основе кристаллического кремния, включающая последовательные операции:4. A line for the production of a photoconverter based on crystalline silicon, including sequential operations: - очистку и текстурирование пластин кристаллического кремния;- cleaning and texturing crystalline silicon wafers; - нанесение пассивирующего слоя аморфного гидрогенизированного кремния на каждую сторону пластины кремния;- applying a passivating layer of amorphous hydrogenated silicon on each side of the silicon wafer; - нанесение p-слоя фотопреобразователя;- application of the p-layer of the photoconverter; - нанесение n-слоя фотопреобразователя;- application of the n-layer of the photoconverter; - нанесение контактных токосъемных слоев фотопреобразователя;- application of contact slip layers of the photoconverter; - нанесение тыльного токосъемного слоя;- application of the back current-collecting layer; - окончательная сборка,- final assembly отличающаяся тем, чтоcharacterized in that выполняют последовательное магнетронное напыление пассивирующего слоя, p-слоя в виде металлического оксида p-типа, n-слоя в виде металлического оксида n-типа и токосъемных слоев методом магнетронного распыления.sequential magnetron sputtering of a passivating layer, a p-layer in the form of p-type metal oxide, an n-layer in the form of n-type metal oxide and current collector layers are performed by magnetron sputtering. 5. Линия по п. 4, отличающаяся тем, что выполняют последовательное магнетронное напыление пассивирующего, p-типа и n-типа слоев методом магнетронного распыления кремниевой мишени в атмосфере силана и аргона с добавлением водорода.5. The line according to claim 4, characterized in that sequential magnetron sputtering of the passivating, p-type and n-type layers is performed by magnetron sputtering of a silicon target in an atmosphere of silane and argon with the addition of hydrogen.
RU2016108626A 2016-03-10 2016-03-10 Structure of photoconverter based on crystalline silicon and its production line RU2632267C2 (en)

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