RU2006120309A - DEVICE FOR PLASMA-CHEMICAL PROCESSING OF MATERIALS - Google Patents

DEVICE FOR PLASMA-CHEMICAL PROCESSING OF MATERIALS Download PDF

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Publication number
RU2006120309A
RU2006120309A RU2006120309/28A RU2006120309A RU2006120309A RU 2006120309 A RU2006120309 A RU 2006120309A RU 2006120309/28 A RU2006120309/28 A RU 2006120309/28A RU 2006120309 A RU2006120309 A RU 2006120309A RU 2006120309 A RU2006120309 A RU 2006120309A
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RU
Russia
Prior art keywords
plasma
electron beam
chemical processing
materials
electron
Prior art date
Application number
RU2006120309/28A
Other languages
Russian (ru)
Other versions
RU2395134C2 (en
Inventor
Елена Алексеевна Гриднева (RU)
Елена Алексеевна Гриднева
Николай Николаевич Коборов (RU)
Николай Николаевич Коборов
Original Assignee
Общество с ограниченной ответственностью "ПирамидСтарт" (RU)
Общество с ограниченной ответственностью "Пирамид Старт"
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Application filed by Общество с ограниченной ответственностью "ПирамидСтарт" (RU), Общество с ограниченной ответственностью "Пирамид Старт" filed Critical Общество с ограниченной ответственностью "ПирамидСтарт" (RU)
Priority to RU2006120309/28A priority Critical patent/RU2395134C2/en
Publication of RU2006120309A publication Critical patent/RU2006120309A/en
Application granted granted Critical
Publication of RU2395134C2 publication Critical patent/RU2395134C2/en

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  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Claims (1)

Устройство для плазмохимической обработки материалов состоит из последовательно расположенных по направлению к центру системы и помещенных в высоковакуумную камеру диаметрально противоположных источника электронов и мишени из материала для напыления, электронно-оптической системы для транспортировки пучка электронов с плотностью тока около 0,3 А/см2, внешних катушек магнитного поля с индукцией вдоль пучка электронов порядка 50 Гс, камеры пучково-плазменного разряда с подачей рабочего газа и расположенного перпендикулярно траектории пучка электронов ввода вращения-перемещения с закрепленным образцом и возможностью подачи напряжения смещения.A device for plasma-chemical processing of materials consists of diametrically opposite electron sources and targets from a material for sputtering, electronically-optical systems for transporting an electron beam with a current density of about 0.3 A / cm 2 , sequentially located towards the center of the system and placed in a high vacuum chamber external coils of a magnetic field with induction along an electron beam of the order of 50 G, a beam-plasma discharge chamber with a working gas supply and a trajectory located perpendicular electron beam input rotational displacement with clamped-pattern and for supplying the bias voltage.
RU2006120309/28A 2006-06-13 2006-06-13 Device for plasma-chemical treatment of materials RU2395134C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2006120309/28A RU2395134C2 (en) 2006-06-13 2006-06-13 Device for plasma-chemical treatment of materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2006120309/28A RU2395134C2 (en) 2006-06-13 2006-06-13 Device for plasma-chemical treatment of materials

Publications (2)

Publication Number Publication Date
RU2006120309A true RU2006120309A (en) 2007-12-27
RU2395134C2 RU2395134C2 (en) 2010-07-20

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ID=39018472

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2006120309/28A RU2395134C2 (en) 2006-06-13 2006-06-13 Device for plasma-chemical treatment of materials

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RU (1) RU2395134C2 (en)

Also Published As

Publication number Publication date
RU2395134C2 (en) 2010-07-20

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20110614