PL442831A1 - Method of depositing thermal insulation layers on glass - Google Patents
Method of depositing thermal insulation layers on glassInfo
- Publication number
- PL442831A1 PL442831A1 PL442831A PL44283122A PL442831A1 PL 442831 A1 PL442831 A1 PL 442831A1 PL 442831 A PL442831 A PL 442831A PL 44283122 A PL44283122 A PL 44283122A PL 442831 A1 PL442831 A1 PL 442831A1
- Authority
- PL
- Poland
- Prior art keywords
- sub
- zinc
- thermal insulation
- aluminum
- glass
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000011521 glass Substances 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 title abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 3
- 239000002243 precursor Substances 0.000 abstract 3
- 239000011701 zinc Substances 0.000 abstract 3
- 229910052725 zinc Inorganic materials 0.000 abstract 3
- 239000011787 zinc oxide Substances 0.000 abstract 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Przedmiotem zgłoszenia jest sposób osadzania na szybach, metodą ALD, warstw termoizolacyjnych z tlenku cynku domieszkowanego glinem (AZO). W sposobie tym, oczyszczoną szybę, na której ma zostać nałożona warstwa termoizolacyjna umieszcza się w reaktorze ALD. Następnie wnętrze reaktora wraz z szybą podgrzewa do temperatury 50°C - 300°C i w tej temperaturze, w co najmniej 40 powtórzeniach sekwencji, gdzie po jednym cyklu glinowym (Al<sub>2</sub>O<sub>3</sub>) następuje 10 — 30 cykli cynkowych (ZnO) lub po 10 — 30 cyklach cynkowych (ZnO) następuje jeden cykl glinowy (Al<sub>2</sub>O<sub>3</sub>) prowadzi się wzrost warstwy termoizolacyjnej. Korzystnie jest jeżeli prekursorem glinowym jest TMA, prekursorem cynkowym jest DEZn — dietylocynk lub DMZn — dimetylocynk i jeżeli prekursorem tlenu jest woda lub ozon.The subject of the application is a method of depositing thermal insulating layers of zinc oxide doped with aluminum (AZO) on windows using the ALD method. In this method, the cleaned glass on which the thermal insulation layer is to be applied is placed in the ALD reactor. Then the interior of the reactor together with the glass is heated to a temperature of 50°C - 300°C and at this temperature, in at least 40 repetitions of the sequence, where after one aluminum cycle (Al<sub>2</sub>O<sub>3</sub >) 10 - 30 zinc cycles (ZnO) occur or after 10 - 30 zinc cycles (ZnO) one aluminum cycle occurs (Al<sub>2</sub>O<sub>3</sub>) the thermal insulation layer grows . It is preferable if the aluminum precursor is TMA, the zinc precursor is DEZn - diethyl zinc or DMZn - dimethyl zinc and if the oxygen precursor is water or ozone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL442831A PL442831A1 (en) | 2022-11-15 | 2022-11-15 | Method of depositing thermal insulation layers on glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL442831A PL442831A1 (en) | 2022-11-15 | 2022-11-15 | Method of depositing thermal insulation layers on glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL442831A1 true PL442831A1 (en) | 2024-05-20 |
Family
ID=91128904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL442831A PL442831A1 (en) | 2022-11-15 | 2022-11-15 | Method of depositing thermal insulation layers on glass |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL442831A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866269A (en) * | 2012-12-11 | 2014-06-18 | 中国科学院微电子研究所 | Method for preparing Te-N codoped zinc oxide film by atomic layer deposition |
| CN104195523A (en) * | 2014-09-02 | 2014-12-10 | 嘉兴科民电子设备技术有限公司 | Method for preparing aluminum-doped zinc oxide thin film through plasma-enhanced atomic layer deposition |
| US20150086709A1 (en) * | 2013-09-26 | 2015-03-26 | Mitchell Stewart Burberry | Passivating ultra-thin azo with nano-layer alumina |
-
2022
- 2022-11-15 PL PL442831A patent/PL442831A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866269A (en) * | 2012-12-11 | 2014-06-18 | 中国科学院微电子研究所 | Method for preparing Te-N codoped zinc oxide film by atomic layer deposition |
| US20150086709A1 (en) * | 2013-09-26 | 2015-03-26 | Mitchell Stewart Burberry | Passivating ultra-thin azo with nano-layer alumina |
| CN104195523A (en) * | 2014-09-02 | 2014-12-10 | 嘉兴科民电子设备技术有限公司 | Method for preparing aluminum-doped zinc oxide thin film through plasma-enhanced atomic layer deposition |
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