PL3648553T3 - Urządzenie do obróbki plazmowej - Google Patents
Urządzenie do obróbki plazmowejInfo
- Publication number
- PL3648553T3 PL3648553T3 PL18823378T PL18823378T PL3648553T3 PL 3648553 T3 PL3648553 T3 PL 3648553T3 PL 18823378 T PL18823378 T PL 18823378T PL 18823378 T PL18823378 T PL 18823378T PL 3648553 T3 PL3648553 T3 PL 3648553T3
- Authority
- PL
- Poland
- Prior art keywords
- treatment device
- plasma treatment
- plasma
- treatment
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
- H03H7/425—Balance-balance networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/023603 WO2019003309A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
PCT/JP2017/023611 WO2019003312A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
JP2018017549 | 2018-02-02 | ||
EP18823378.7A EP3648553B1 (en) | 2017-06-27 | 2018-06-26 | Plasma treatment device |
PCT/JP2018/024145 WO2019004183A1 (ja) | 2017-06-27 | 2018-06-26 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
PL3648553T3 true PL3648553T3 (pl) | 2021-09-13 |
Family
ID=64741824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL18823378T PL3648553T3 (pl) | 2017-06-27 | 2018-06-26 | Urządzenie do obróbki plazmowej |
Country Status (9)
Country | Link |
---|---|
US (1) | US20200126763A1 (pl) |
EP (1) | EP3648553B1 (pl) |
JP (2) | JP6564556B2 (pl) |
KR (1) | KR102327136B1 (pl) |
CN (1) | CN110800378B (pl) |
PL (1) | PL3648553T3 (pl) |
SG (1) | SG11201912655XA (pl) |
TW (1) | TWI677907B (pl) |
WO (1) | WO2019004183A1 (pl) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102257134B1 (ko) * | 2017-06-27 | 2021-05-26 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
PL3648554T3 (pl) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Urządzenie do przetwarzania plazmowego |
KR20220031132A (ko) * | 2017-06-27 | 2022-03-11 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
WO2019003309A1 (ja) | 2017-06-27 | 2019-01-03 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
EP3817517A4 (en) * | 2018-06-26 | 2022-03-16 | Canon Anelva Corporation | PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, PROGRAM, AND MEMORY MEDIA |
US11535532B1 (en) * | 2020-07-17 | 2022-12-27 | Dmitry Medvedev | System and method of water purification and hydrogen peroxide generation by plasma |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3780255A (en) * | 1971-09-30 | 1973-12-18 | Celanese Corp | Apparatus for heat treatment of substrates |
BE806098A (fr) * | 1973-03-28 | 1974-02-01 | Siemens Ag | Procede de fabrication de silicium ou autre matiere semi-conductrice tres pure |
US4887005A (en) * | 1987-09-15 | 1989-12-12 | Rough J Kirkwood H | Multiple electrode plasma reactor power distribution system |
US4871421A (en) * | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
JPH02156083A (ja) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | スパッタ装置 |
JPH02156081A (ja) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | スパッタ装置 |
JPH02156080A (ja) * | 1988-12-09 | 1990-06-15 | Tokuda Seisakusho Ltd | スパッタ装置 |
US5354413A (en) * | 1993-03-18 | 1994-10-11 | Advanced Micro Devices, Inc. | Electrode position controller for a semiconductor etching device |
US5989999A (en) * | 1994-11-14 | 1999-11-23 | Applied Materials, Inc. | Construction of a tantalum nitride film on a semiconductor wafer |
DE19615735A1 (de) * | 1996-04-20 | 1997-10-23 | Ruediger Haaga Gmbh | Vorrichtung zum Sterilisieren der Innenflächen von druckempfindlichen Behältern |
JPH10134997A (ja) * | 1996-10-24 | 1998-05-22 | Samsung Electron Co Ltd | 2次電位による放電を除去したプラズマ処理装置 |
KR100252210B1 (ko) * | 1996-12-24 | 2000-04-15 | 윤종용 | 반도체장치 제조용 건식식각장치 |
GB9714142D0 (en) * | 1997-07-05 | 1997-09-10 | Surface Tech Sys Ltd | An arrangement for the feeding of RF power to one or more antennae |
JP3148177B2 (ja) * | 1998-04-27 | 2001-03-19 | ニチメン電子工研株式会社 | プラズマ処理装置 |
US6818103B1 (en) * | 1999-10-15 | 2004-11-16 | Advanced Energy Industries, Inc. | Method and apparatus for substrate biasing in multiple electrode sputtering systems |
US6677167B2 (en) * | 2002-03-04 | 2004-01-13 | Hitachi High-Technologies Corporation | Wafer processing apparatus and a wafer stage and a wafer processing method |
US7445690B2 (en) * | 2002-10-07 | 2008-11-04 | Tokyo Electron Limited | Plasma processing apparatus |
DE10306347A1 (de) * | 2003-02-15 | 2004-08-26 | Hüttinger Elektronik GmbH & Co. KG | Leistungszufuhrregeleinheit |
JP3575011B1 (ja) * | 2003-07-04 | 2004-10-06 | 村田 正義 | プラズマ表面処理装置およびプラズマ表面処理方法 |
JP4658506B2 (ja) * | 2004-03-31 | 2011-03-23 | 浩史 滝川 | パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置 |
JP2006319043A (ja) * | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
CN101512736A (zh) * | 2006-09-11 | 2009-08-19 | 株式会社爱发科 | 干式蚀刻方法 |
TWI440405B (zh) * | 2007-10-22 | 2014-06-01 | New Power Plasma Co Ltd | 電容式耦合電漿反應器 |
JP5294669B2 (ja) * | 2008-03-25 | 2013-09-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2008294465A (ja) * | 2008-07-31 | 2008-12-04 | Masayoshi Murata | 電流導入端子と、該電流導入端子を備えたプラズマ表面処理装置及びプラズマ表面処理方法 |
JP4547711B2 (ja) * | 2008-10-10 | 2010-09-22 | 村田 正義 | 高周波プラズマcvd装置及び高周波プラズマcvd法 |
JP2010255061A (ja) * | 2009-04-27 | 2010-11-11 | Canon Anelva Corp | スパッタリング装置及びスパッタリング処理方法 |
JP2009302566A (ja) * | 2009-09-16 | 2009-12-24 | Masayoshi Murata | トランス型平衡不平衡変換装置を備えたプラズマ表面処理装置 |
WO2011040147A1 (ja) * | 2009-09-29 | 2011-04-07 | 株式会社 アルバック | プラズマエッチング装置 |
US20130017315A1 (en) * | 2011-07-15 | 2013-01-17 | Applied Materials, Inc. | Methods and apparatus for controlling power distribution in substrate processing systems |
JP2013098177A (ja) * | 2011-10-31 | 2013-05-20 | Semes Co Ltd | 基板処理装置及びインピーダンスマッチング方法 |
US20130337657A1 (en) * | 2012-06-19 | 2013-12-19 | Plasmasi, Inc. | Apparatus and method for forming thin protective and optical layers on substrates |
JP2014049541A (ja) * | 2012-08-30 | 2014-03-17 | Mitsubishi Heavy Ind Ltd | 薄膜製造装置及びその電極電圧調整方法 |
JP2013139642A (ja) * | 2013-04-02 | 2013-07-18 | Canon Anelva Corp | スパッタ成膜応用のためのプラズマ処理装置 |
CN105849870B (zh) * | 2013-12-25 | 2018-09-28 | 佳能安内华股份有限公司 | 基板加工方法及半导体装置的制造方法 |
GB201502453D0 (en) * | 2015-02-13 | 2015-04-01 | Spts Technologies Ltd | Plasma producing apparatus |
JP6473974B2 (ja) * | 2016-09-30 | 2019-02-27 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP6524536B2 (ja) * | 2016-11-09 | 2019-06-05 | パナソニックIpマネジメント株式会社 | プラズマ処理装置およびプラズマ処理方法 |
PL3648554T3 (pl) * | 2017-06-27 | 2021-11-22 | Canon Anelva Corporation | Urządzenie do przetwarzania plazmowego |
-
2018
- 2018-06-26 EP EP18823378.7A patent/EP3648553B1/en active Active
- 2018-06-26 CN CN201880042477.2A patent/CN110800378B/zh active Active
- 2018-06-26 KR KR1020207001383A patent/KR102327136B1/ko active IP Right Grant
- 2018-06-26 JP JP2019526922A patent/JP6564556B2/ja active Active
- 2018-06-26 PL PL18823378T patent/PL3648553T3/pl unknown
- 2018-06-26 SG SG11201912655XA patent/SG11201912655XA/en unknown
- 2018-06-26 WO PCT/JP2018/024145 patent/WO2019004183A1/ja unknown
- 2018-06-26 TW TW107121808A patent/TWI677907B/zh active
-
2019
- 2019-05-29 JP JP2019100707A patent/JP6714127B2/ja active Active
- 2019-12-19 US US16/720,087 patent/US20200126763A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
TW201905972A (zh) | 2019-02-01 |
EP3648553B1 (en) | 2021-05-19 |
CN110800378A (zh) | 2020-02-14 |
US20200126763A1 (en) | 2020-04-23 |
JPWO2019004183A1 (ja) | 2019-11-07 |
JP6564556B2 (ja) | 2019-08-21 |
JP6714127B2 (ja) | 2020-06-24 |
JP2019194986A (ja) | 2019-11-07 |
CN110800378B (zh) | 2021-12-28 |
SG11201912655XA (en) | 2020-01-30 |
WO2019004183A1 (ja) | 2019-01-03 |
EP3648553A1 (en) | 2020-05-06 |
KR102327136B1 (ko) | 2021-11-15 |
KR20200018656A (ko) | 2020-02-19 |
TWI677907B (zh) | 2019-11-21 |
EP3648553A4 (en) | 2020-06-24 |
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