PL357708A1 - Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction - Google Patents
Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstractionInfo
- Publication number
- PL357708A1 PL357708A1 PL02357708A PL35770802A PL357708A1 PL 357708 A1 PL357708 A1 PL 357708A1 PL 02357708 A PL02357708 A PL 02357708A PL 35770802 A PL35770802 A PL 35770802A PL 357708 A1 PL357708 A1 PL 357708A1
- Authority
- PL
- Poland
- Prior art keywords
- nitride
- voluminal
- epitaxy
- fabrication
- mono
- Prior art date
Links
Priority Applications (23)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
AU2003285769A AU2003285769A1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
KR1020057010670A KR101060073B1 (en) | 2002-12-11 | 2003-12-11 | Template type substrate and its manufacturing method |
EP03778842A EP1581675B1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
DE60331245T DE60331245D1 (en) | 2002-12-11 | 2003-12-11 | SUBSTRATE FOR EPITAXIA AND METHOD FOR THE PRODUCTION THEREOF |
US10/538,407 US7387677B2 (en) | 2002-12-11 | 2003-12-11 | Substrate for epitaxy and method of preparing the same |
TW092135267A TWI352434B (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing |
AU2003285768A AU2003285768A1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
TW092135277A TWI334229B (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
US10/538,654 US7410539B2 (en) | 2002-12-11 | 2003-12-11 | Template type substrate and a method of preparing the same |
PL379546A PL224992B1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
EP03778843A EP1576210B1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
DE60329713T DE60329713D1 (en) | 2002-12-11 | 2003-12-11 | TEMPLATE-BASED SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF |
AT03778843T ATE457372T1 (en) | 2002-12-11 | 2003-12-11 | SUBSTRATE FOR EPITAXY AND METHOD FOR THE PRODUCTION THEREOF |
PCT/JP2003/015905 WO2004053209A1 (en) | 2002-12-11 | 2003-12-11 | A template type substrate and a method of preparing the same |
JP2004558482A JP4558502B2 (en) | 2002-12-11 | 2003-12-11 | Template type substrate manufacturing method |
PL379545A PL224991B1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
KR1020057010733A KR100789889B1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
JP2004558483A JP4860927B2 (en) | 2002-12-11 | 2003-12-11 | Epitaxy substrate and manufacturing method thereof |
AT03778842T ATE445722T1 (en) | 2002-12-11 | 2003-12-11 | STENCIL-LIKE SUBSTRATE AND METHOD FOR PRODUCING IT |
PCT/JP2003/015906 WO2004053210A1 (en) | 2002-12-11 | 2003-12-11 | A substrate for epitaxy and a method of preparing the same |
HK06102217A HK1083030A1 (en) | 2002-12-11 | 2006-02-20 | A substrate for epitaxy and a method of preparing the same |
US12/213,212 US8110848B2 (en) | 2002-12-11 | 2008-06-16 | Substrate for epitaxy and method of preparing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
Publications (1)
Publication Number | Publication Date |
---|---|
PL357708A1 true PL357708A1 (en) | 2004-06-14 |
Family
ID=32733408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL02357708A PL357708A1 (en) | 2002-12-11 | 2002-12-11 | Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction |
Country Status (1)
Country | Link |
---|---|
PL (1) | PL357708A1 (en) |
-
2002
- 2002-12-11 PL PL02357708A patent/PL357708A1/en unknown
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