PL357708A1 - Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction - Google Patents

Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction

Info

Publication number
PL357708A1
PL357708A1 PL02357708A PL35770802A PL357708A1 PL 357708 A1 PL357708 A1 PL 357708A1 PL 02357708 A PL02357708 A PL 02357708A PL 35770802 A PL35770802 A PL 35770802A PL 357708 A1 PL357708 A1 PL 357708A1
Authority
PL
Poland
Prior art keywords
nitride
voluminal
epitaxy
fabrication
mono
Prior art date
Application number
PL02357708A
Other languages
Polish (pl)
Inventor
Robert Dwiliński
Roman Doradziński
Jerzy Garczyński
Leszek P. Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp.Z O.O.
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ammono Sp.Z O.O., Nichia Corporation filed Critical Ammono Sp.Z O.O.
Priority to PL02357708A priority Critical patent/PL357708A1/en
Priority to EP03778843A priority patent/EP1576210B1/en
Priority to KR1020057010733A priority patent/KR100789889B1/en
Priority to AU2003285769A priority patent/AU2003285769A1/en
Priority to DE60331245T priority patent/DE60331245D1/en
Priority to US10/538,407 priority patent/US7387677B2/en
Priority to TW092135267A priority patent/TWI352434B/en
Priority to AU2003285768A priority patent/AU2003285768A1/en
Priority to TW092135277A priority patent/TWI334229B/en
Priority to US10/538,654 priority patent/US7410539B2/en
Priority to AT03778843T priority patent/ATE457372T1/en
Priority to EP03778842A priority patent/EP1581675B1/en
Priority to DE60329713T priority patent/DE60329713D1/en
Priority to PL379546A priority patent/PL224992B1/en
Priority to PCT/JP2003/015905 priority patent/WO2004053209A1/en
Priority to JP2004558482A priority patent/JP4558502B2/en
Priority to PL379545A priority patent/PL224991B1/en
Priority to KR1020057010670A priority patent/KR101060073B1/en
Priority to JP2004558483A priority patent/JP4860927B2/en
Priority to AT03778842T priority patent/ATE445722T1/en
Priority to PCT/JP2003/015906 priority patent/WO2004053210A1/en
Publication of PL357708A1 publication Critical patent/PL357708A1/en
Priority to HK06102217A priority patent/HK1083030A1/en
Priority to US12/213,212 priority patent/US8110848B2/en

Links

PL02357708A 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction PL357708A1 (en)

Priority Applications (23)

Application Number Priority Date Filing Date Title
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
AU2003285769A AU2003285769A1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same
KR1020057010670A KR101060073B1 (en) 2002-12-11 2003-12-11 Template type substrate and its manufacturing method
EP03778842A EP1581675B1 (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same
DE60331245T DE60331245D1 (en) 2002-12-11 2003-12-11 SUBSTRATE FOR EPITAXIA AND METHOD FOR THE PRODUCTION THEREOF
US10/538,407 US7387677B2 (en) 2002-12-11 2003-12-11 Substrate for epitaxy and method of preparing the same
TW092135267A TWI352434B (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing
AU2003285768A AU2003285768A1 (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same
TW092135277A TWI334229B (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same
US10/538,654 US7410539B2 (en) 2002-12-11 2003-12-11 Template type substrate and a method of preparing the same
PL379546A PL224992B1 (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same
EP03778843A EP1576210B1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same
DE60329713T DE60329713D1 (en) 2002-12-11 2003-12-11 TEMPLATE-BASED SUBSTRATE AND METHOD FOR THE PRODUCTION THEREOF
AT03778843T ATE457372T1 (en) 2002-12-11 2003-12-11 SUBSTRATE FOR EPITAXY AND METHOD FOR THE PRODUCTION THEREOF
PCT/JP2003/015905 WO2004053209A1 (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same
JP2004558482A JP4558502B2 (en) 2002-12-11 2003-12-11 Template type substrate manufacturing method
PL379545A PL224991B1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same
KR1020057010733A KR100789889B1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same
JP2004558483A JP4860927B2 (en) 2002-12-11 2003-12-11 Epitaxy substrate and manufacturing method thereof
AT03778842T ATE445722T1 (en) 2002-12-11 2003-12-11 STENCIL-LIKE SUBSTRATE AND METHOD FOR PRODUCING IT
PCT/JP2003/015906 WO2004053210A1 (en) 2002-12-11 2003-12-11 A substrate for epitaxy and a method of preparing the same
HK06102217A HK1083030A1 (en) 2002-12-11 2006-02-20 A substrate for epitaxy and a method of preparing the same
US12/213,212 US8110848B2 (en) 2002-12-11 2008-06-16 Substrate for epitaxy and method of preparing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction

Publications (1)

Publication Number Publication Date
PL357708A1 true PL357708A1 (en) 2004-06-14

Family

ID=32733408

Family Applications (1)

Application Number Title Priority Date Filing Date
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction

Country Status (1)

Country Link
PL (1) PL357708A1 (en)

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