PL3449508T3 - Detektor promieniowania i sposób jego wytwarzania - Google Patents
Detektor promieniowania i sposób jego wytwarzaniaInfo
- Publication number
- PL3449508T3 PL3449508T3 PL18700149T PL18700149T PL3449508T3 PL 3449508 T3 PL3449508 T3 PL 3449508T3 PL 18700149 T PL18700149 T PL 18700149T PL 18700149 T PL18700149 T PL 18700149T PL 3449508 T3 PL3449508 T3 PL 3449508T3
- Authority
- PL
- Poland
- Prior art keywords
- radiation detector
- producing same
- producing
- same
- detector
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1121—Devices with Schottky gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
- H01Q9/28—Conical, cylindrical, cage, strip, gauze, or like elements having an extended radiating surface; Elements comprising two conical surfaces having collinear axes and adjacent apices and fed by two-conductor transmission lines
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0014—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation from gases, flames
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguide Aerials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017103687.3A DE102017103687B3 (de) | 2017-02-23 | 2017-02-23 | Strahlungsdetektor und Verfahren zu dessen Herstellung |
EP18700149.0A EP3449508B1 (de) | 2017-02-23 | 2018-01-10 | Strahlungsdetektor und verfahren zu dessen herstellung |
PCT/EP2018/050501 WO2018153557A1 (de) | 2017-02-23 | 2018-01-10 | Strahlungsdetektor und verfahren zu dessen herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
PL3449508T3 true PL3449508T3 (pl) | 2021-02-08 |
Family
ID=60943030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL18700149T PL3449508T3 (pl) | 2017-02-23 | 2018-01-10 | Detektor promieniowania i sposób jego wytwarzania |
Country Status (7)
Country | Link |
---|---|
US (1) | US10825947B2 (pl) |
EP (1) | EP3449508B1 (pl) |
JP (1) | JP6914967B2 (pl) |
DE (1) | DE102017103687B3 (pl) |
ES (1) | ES2822275T3 (pl) |
PL (1) | PL3449508T3 (pl) |
WO (1) | WO2018153557A1 (pl) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021077665A (ja) * | 2019-11-05 | 2021-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置および電子機器 |
WO2021183033A1 (en) * | 2020-03-13 | 2021-09-16 | Fingerprint Cards Ab | A terahertz biometric imaging package |
CN113994394A (zh) * | 2020-03-13 | 2022-01-28 | 指纹卡安娜卡敦知识产权有限公司 | 显示器下的无源太赫兹生物特征成像装置 |
CN114008689A (zh) | 2020-03-13 | 2022-02-01 | 指纹卡安娜卡敦知识产权有限公司 | 显示器下方的太赫兹生物特征成像装置 |
CN112467341B (zh) * | 2020-11-10 | 2022-10-18 | 浙江中烟工业有限责任公司 | 一种基于石墨烯的频率可调谐车载天线 |
US20220165726A1 (en) * | 2020-11-26 | 2022-05-26 | Innolux Corporation | Electronic device |
CN113639866B (zh) * | 2021-08-25 | 2024-05-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | 场效应宽谱探测器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004241471A (ja) * | 2003-02-04 | 2004-08-26 | Renesas Technology Corp | 化合物半導体装置とその製造方法、半導体装置及び高周波モジュール |
US7638817B2 (en) * | 2004-04-26 | 2009-12-29 | Sensor Electronic Technology, Inc. | Device and method for managing radiation |
US7555217B2 (en) * | 2005-02-28 | 2009-06-30 | Searete Llc | Multi wavelength electromagnetic device |
DE102007062562B4 (de) | 2007-12-22 | 2009-10-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Monolithisch integrierter Antennen- und Empfängerschaltkreis für die Erfassung von Terahertz-Wellen |
DE102008047101A1 (de) | 2008-09-12 | 2010-03-25 | Bergische Universität Wuppertal | Verteilter resistiver Mischer |
JP2010135520A (ja) * | 2008-12-03 | 2010-06-17 | Panasonic Corp | テラヘルツ受信素子 |
US8809834B2 (en) * | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
JP2012175034A (ja) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | テラヘルツ波素子 |
DE102011076840B4 (de) | 2011-05-31 | 2013-08-01 | Johann Wolfgang Goethe-Universität Frankfurt am Main | Monolithisch integrierter Antennen- und Empfängerschaltkreis und THz-Heterodynempfänger und bildgebendes System, diesen aufweisend, und Verwendung dieser zur Erfassung elektromagnetischer Strahlung im THz-Frequenzbereich |
JP2015144248A (ja) * | 2013-12-25 | 2015-08-06 | キヤノン株式会社 | 半導体装置、及びその製造方法 |
-
2017
- 2017-02-23 DE DE102017103687.3A patent/DE102017103687B3/de active Active
-
2018
- 2018-01-10 PL PL18700149T patent/PL3449508T3/pl unknown
- 2018-01-10 EP EP18700149.0A patent/EP3449508B1/de active Active
- 2018-01-10 WO PCT/EP2018/050501 patent/WO2018153557A1/de active Application Filing
- 2018-01-10 ES ES18700149T patent/ES2822275T3/es active Active
- 2018-01-10 JP JP2018560893A patent/JP6914967B2/ja active Active
- 2018-01-10 US US16/312,771 patent/US10825947B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190393374A1 (en) | 2019-12-26 |
EP3449508B1 (de) | 2020-07-01 |
US10825947B2 (en) | 2020-11-03 |
JP2020510323A (ja) | 2020-04-02 |
ES2822275T3 (es) | 2021-04-30 |
DE102017103687B3 (de) | 2018-04-26 |
JP6914967B2 (ja) | 2021-08-04 |
WO2018153557A1 (de) | 2018-08-30 |
EP3449508A1 (de) | 2019-03-06 |
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