NO942489D0 - Plasma reactor for a deposition or etching process - Google Patents
Plasma reactor for a deposition or etching processInfo
- Publication number
- NO942489D0 NO942489D0 NO942489A NO942489A NO942489D0 NO 942489 D0 NO942489 D0 NO 942489D0 NO 942489 A NO942489 A NO 942489A NO 942489 A NO942489 A NO 942489A NO 942489 D0 NO942489 D0 NO 942489D0
- Authority
- NO
- Norway
- Prior art keywords
- deposition
- etching process
- plasma reactor
- reactor
- plasma
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9308204A FR2707449B1 (en) | 1993-07-05 | 1993-07-05 | Plasma reactor for a deposition or etching process. |
Publications (2)
Publication Number | Publication Date |
---|---|
NO942489D0 true NO942489D0 (en) | 1994-07-01 |
NO942489L NO942489L (en) | 1995-01-06 |
Family
ID=9448909
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO942489A NO942489L (en) | 1993-07-05 | 1994-07-01 | Plasma reactor for a deposition or etching process |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0633713A1 (en) |
JP (1) | JPH0773996A (en) |
FI (1) | FI943184A (en) |
FR (1) | FR2707449B1 (en) |
NO (1) | NO942489L (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU6405496A (en) * | 1995-06-29 | 1997-01-30 | Lam Research Corporation | A scalable helicon wave plasma processing device with a non-cylindrical source chamber |
DE19606375A1 (en) * | 1996-02-21 | 1997-08-28 | Balzers Prozes Systeme Gmbh | Microwave plasma source with Whistler or Helicon waves |
US5868897A (en) * | 1996-07-31 | 1999-02-09 | Toyo Technologies, Inc. | Device and method for processing a plasma to alter the surface of a substrate using neutrals |
US6085688A (en) * | 1998-03-27 | 2000-07-11 | Applied Materials, Inc. | Method and apparatus for improving processing and reducing charge damage in an inductively coupled plasma reactor |
RU2196395C1 (en) * | 2001-05-30 | 2003-01-10 | Александров Андрей Федорович | Plasma reactor and plasma generating device (alternatives) |
JP4741845B2 (en) * | 2004-01-13 | 2011-08-10 | 株式会社 セルバック | Inductively coupled plasma processing equipment |
WO2024070562A1 (en) * | 2022-09-30 | 2024-04-04 | 東京エレクトロン株式会社 | Plasma processing device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958883A (en) * | 1974-07-10 | 1976-05-25 | Baird-Atomic, Inc. | Radio frequency induced plasma excitation of optical emission spectroscopic samples |
US4658153A (en) * | 1984-06-18 | 1987-04-14 | Amnon Brosh | Planar coil apparatus for providing a frequency output vs. position |
DE68924413T2 (en) * | 1989-01-25 | 1996-05-02 | Ibm | Radio frequency induction / multipole plasma processing device. |
GB8905075D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Electrode assembly and apparatus |
US4990229A (en) * | 1989-06-13 | 1991-02-05 | Plasma & Materials Technologies, Inc. | High density plasma deposition and etching apparatus |
US4948458A (en) * | 1989-08-14 | 1990-08-14 | Lam Research Corporation | Method and apparatus for producing magnetically-coupled planar plasma |
JPH0775226B2 (en) * | 1990-04-10 | 1995-08-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | Plasma processing method and apparatus |
-
1993
- 1993-07-05 FR FR9308204A patent/FR2707449B1/en not_active Expired - Fee Related
-
1994
- 1994-06-30 EP EP94401485A patent/EP0633713A1/en not_active Ceased
- 1994-07-01 NO NO942489A patent/NO942489L/en unknown
- 1994-07-01 FI FI943184A patent/FI943184A/en not_active Application Discontinuation
- 1994-07-05 JP JP6153817A patent/JPH0773996A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0633713A1 (en) | 1995-01-11 |
JPH0773996A (en) | 1995-03-17 |
FR2707449B1 (en) | 1995-08-11 |
NO942489L (en) | 1995-01-06 |
FI943184A0 (en) | 1994-07-01 |
FI943184A (en) | 1995-01-06 |
FR2707449A1 (en) | 1995-01-13 |
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