NO322291B1 - Innretning for gassavfoling - Google Patents
Innretning for gassavfoling Download PDFInfo
- Publication number
- NO322291B1 NO322291B1 NO20005611A NO20005611A NO322291B1 NO 322291 B1 NO322291 B1 NO 322291B1 NO 20005611 A NO20005611 A NO 20005611A NO 20005611 A NO20005611 A NO 20005611A NO 322291 B1 NO322291 B1 NO 322291B1
- Authority
- NO
- Norway
- Prior art keywords
- microstructure
- layer
- catalytic
- conductive layer
- channels
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 44
- 230000003197 catalytic effect Effects 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 11
- 238000001459 lithography Methods 0.000 claims description 11
- 230000000873 masking effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 76
- 239000007789 gas Substances 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 23
- 239000002184 metal Substances 0.000 description 23
- 239000000758 substrate Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007560 sedimentation technique Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9801610A SE514042C2 (sv) | 1998-05-08 | 1998-05-08 | Sensoranordning |
| PCT/SE1999/000760 WO1999058964A1 (en) | 1998-05-08 | 1999-05-06 | Device for gas sensing |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20005611D0 NO20005611D0 (no) | 2000-11-07 |
| NO20005611L NO20005611L (no) | 2001-01-03 |
| NO322291B1 true NO322291B1 (no) | 2006-09-11 |
Family
ID=20411231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20005611A NO322291B1 (no) | 1998-05-08 | 2000-11-07 | Innretning for gassavfoling |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6569779B1 (sv) |
| EP (1) | EP1076816A1 (sv) |
| JP (1) | JP2002514760A (sv) |
| AU (1) | AU4305599A (sv) |
| NO (1) | NO322291B1 (sv) |
| SE (1) | SE514042C2 (sv) |
| WO (1) | WO1999058964A1 (sv) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6004835A (en) * | 1997-04-25 | 1999-12-21 | Micron Technology, Inc. | Method of forming integrated circuitry, conductive lines, a conductive grid, a conductive network, an electrical interconnection to anode location and an electrical interconnection with a transistor source/drain region |
| US6903433B1 (en) | 2000-01-19 | 2005-06-07 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
| US7274082B2 (en) | 2000-01-19 | 2007-09-25 | Adrena, Inc. | Chemical sensor using chemically induced electron-hole production at a schottky barrier |
| AU2000263333A1 (en) * | 2000-01-19 | 2001-07-31 | The Regents Of The University Of California | A chemical sensor using chemically induced electron-hole production at a schottky barrier |
| EP1767934B1 (en) * | 2005-09-21 | 2007-12-05 | Adixen Sensistor AB | Hydrogen gas sensitive semiconductor sensor |
| US10739299B2 (en) * | 2017-03-14 | 2020-08-11 | Roche Sequencing Solutions, Inc. | Nanopore well structures and methods |
| KR102084734B1 (ko) * | 2020-01-07 | 2020-03-04 | 주식회사 케이디 | 배수관로의 수위 및 유량 측정장치 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2857251A (en) | 1953-01-28 | 1958-10-21 | Atlantic Refining Co | Process and dual-detector apparatus for analyzing gases |
| US3595621A (en) | 1968-09-30 | 1971-07-27 | Anthony John Andreatch | Catalytic analyzer |
| US4169126A (en) | 1976-09-03 | 1979-09-25 | Johnson, Matthey & Co., Limited | Temperature-responsive device |
| US4321322A (en) | 1979-06-18 | 1982-03-23 | Ahnell Joseph E | Pulsed voltammetric detection of microorganisms |
| DE3151891A1 (de) | 1981-12-30 | 1983-07-14 | Zimmer, Günter, Dr.rer. nat., 4600 Dortmund | Halbleiter-sensor fuer die messung der konzentration von teilchen in fluiden |
| CS231026B1 (en) | 1982-09-27 | 1984-09-17 | Lubomir Serak | Method of voltmetric determination of oxygen and sensor to perform this method |
| CH665908A5 (de) | 1983-08-30 | 1988-06-15 | Cerberus Ag | Vorrichtung zum selektiven detektieren der gasfoermigen bestandteile von gasgemischen in luft mittels eines gassensors. |
| US4897162A (en) | 1986-11-14 | 1990-01-30 | The Cleveland Clinic Foundation | Pulse voltammetry |
| DE3729286A1 (de) | 1987-09-02 | 1989-03-16 | Draegerwerk Ag | Messgeraet zur analyse eines gasgemisches |
| JPH0695082B2 (ja) | 1987-10-08 | 1994-11-24 | 新コスモス電機株式会社 | 吸引式オゾンガス検知器 |
| US5244656A (en) * | 1990-05-04 | 1993-09-14 | Wisconsin Alumni Research Foundation | Antigen specific plasmacytomas and antibodies derived therefrom |
| NL9002750A (nl) | 1990-12-13 | 1992-07-01 | Imec Inter Uni Micro Electr | Sensor van het diode type. |
| JPH05308107A (ja) * | 1991-07-01 | 1993-11-19 | Sumitomo Electric Ind Ltd | 半導体装置及びその製作方法 |
| JPH05240838A (ja) | 1992-02-27 | 1993-09-21 | Kagome Co Ltd | 加工飲食品に含まれるジアセチルの測定方法 |
| US5332681A (en) | 1992-06-12 | 1994-07-26 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a semiconductor device by forming a nanochannel mask |
| JP3496307B2 (ja) | 1994-02-18 | 2004-02-09 | 株式会社デンソー | 触媒劣化検知法及び空燃比センサ |
| SE503265C2 (sv) * | 1994-09-23 | 1996-04-29 | Forskarpatent Ab | Förfarande och anordning för gasdetektion |
| US5753934A (en) * | 1995-08-04 | 1998-05-19 | Tok Corporation | Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film |
| JPH09229945A (ja) * | 1996-02-23 | 1997-09-05 | Canon Inc | マイクロ構造体を支持するエアブリッジ型構造体の製造方法とその雌型基板、並びに、エアブリッジ型構造体とそれを用いたマイクロ構造体およびトンネル電流または微小力検出用のプローブ |
| US5691215A (en) * | 1996-08-26 | 1997-11-25 | Industrial Technology Research Institute | Method for fabricating a sub-half micron MOSFET device with insulator filled shallow trenches planarized via use of negative photoresist and de-focus exposure |
| GB9819821D0 (en) * | 1998-09-12 | 1998-11-04 | Secr Defence | Improvements relating to micro-machining |
| US6284671B1 (en) * | 1998-11-19 | 2001-09-04 | National Research Council Of Canada | Selective electrochemical process for creating semiconductor nano-and micro-patterns |
| SE524102C2 (sv) | 1999-06-04 | 2004-06-29 | Appliedsensor Sweden Ab | Mikro-hotplate-anordning med integrerad gaskänslig fälteffektsensor |
-
1998
- 1998-05-08 SE SE9801610A patent/SE514042C2/sv unknown
-
1999
- 1999-05-06 AU AU43055/99A patent/AU4305599A/en not_active Abandoned
- 1999-05-06 EP EP99950365A patent/EP1076816A1/en not_active Ceased
- 1999-05-06 US US09/674,871 patent/US6569779B1/en not_active Expired - Fee Related
- 1999-05-06 JP JP2000548717A patent/JP2002514760A/ja not_active Abandoned
- 1999-05-06 WO PCT/SE1999/000760 patent/WO1999058964A1/en active Application Filing
-
2000
- 2000-11-07 NO NO20005611A patent/NO322291B1/no not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| SE514042C2 (sv) | 2000-12-18 |
| AU4305599A (en) | 1999-11-29 |
| US6569779B1 (en) | 2003-05-27 |
| NO20005611D0 (no) | 2000-11-07 |
| SE9801610L (sv) | 1999-11-09 |
| SE9801610D0 (sv) | 1998-05-08 |
| EP1076816A1 (en) | 2001-02-21 |
| NO20005611L (no) | 2001-01-03 |
| JP2002514760A (ja) | 2002-05-21 |
| WO1999058964A1 (en) | 1999-11-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM1K | Lapsed by not paying the annual fees |