NO20071852L - Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride - Google Patents
Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chlorideInfo
- Publication number
- NO20071852L NO20071852L NO20071852A NO20071852A NO20071852L NO 20071852 L NO20071852 L NO 20071852L NO 20071852 A NO20071852 A NO 20071852A NO 20071852 A NO20071852 A NO 20071852A NO 20071852 L NO20071852 L NO 20071852L
- Authority
- NO
- Norway
- Prior art keywords
- zinc
- silicon
- equipment
- zinc chloride
- high purity
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B61/00—Obtaining metals not elsewhere provided for in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/002—Nozzle-type elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/18—Details relating to the spatial orientation of the reactor
- B01J2219/182—Details relating to the spatial orientation of the reactor horizontal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/19—Details relating to the geometry of the reactor
- B01J2219/192—Details relating to the geometry of the reactor polygonal
- B01J2219/1923—Details relating to the geometry of the reactor polygonal square or square-derived
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1263—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
- C22B34/1268—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
- C22B34/1272—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams reduction of titanium halides, e.g. Kroll process
Abstract
Prosess og utstyr for å bringe silisiumtetraklorid til å reagere med flytende sink for å fremstille silisium og sinkklorid, der reaksjonen finner sted i en reaktor (1). Silisiumtetrakloridgass sprøytes kontinuerlig inn gjennom en eller flere dyser (7) til en strøm av smeltet sink (5) i en reaksjonssone (2) av reaktoren der temperaturen er over smeltepunktet til sink (>419 ºC) og under koketemperaturen til sinkklorid ved 1 atmosfæres trykk (732 ºC). Reaksjonsproduktene, silisium og sinkklorid, samles i en separasjonssone (3) som de kan tas ut fra. Med den foreliggende nye prosessen og utstyret kan silisium med høy renhet produseres effektivt og billig.Process and equipment for reacting silicon tetrachloride with liquid zinc to produce silicon and zinc chloride, where the reaction takes place in a reactor (1). Silicon tetrachloride gas is continuously injected through one or more nozzles (7) into a stream of molten zinc (5) in a reaction zone (2) of the reactor where the temperature is above the melting point of zinc (> 419 ° C) and below the boiling temperature to zinc chloride at 1 atmospheric pressure. (732 ºC). The reaction products, silicon and zinc chloride, are collected in a separation zone (3) from which they can be removed. With the present new process and equipment, high purity silicon can be produced efficiently and cheaply.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20071852A NO20071852L (en) | 2007-04-11 | 2007-04-11 | Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride |
PCT/NO2008/000127 WO2008127120A1 (en) | 2007-04-11 | 2008-04-04 | Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride |
TW97112571A TW200906721A (en) | 2007-04-11 | 2008-04-08 | Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NO20071852A NO20071852L (en) | 2007-04-11 | 2007-04-11 | Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20071852L true NO20071852L (en) | 2008-10-13 |
Family
ID=39864133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20071852A NO20071852L (en) | 2007-04-11 | 2007-04-11 | Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride |
Country Status (3)
Country | Link |
---|---|
NO (1) | NO20071852L (en) |
TW (1) | TW200906721A (en) |
WO (1) | WO2008127120A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2415711A1 (en) | 2010-08-05 | 2012-02-08 | Hycore ANS | Process and apparatus for the preparation and recovery of high purity silicon |
TWI471267B (en) * | 2011-10-12 | 2015-02-01 | C S Lab In Technology Ltd | Manufacture of high purity silicon fine particles |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1582780A (en) * | 1968-01-10 | 1969-10-10 | ||
DE2803858C2 (en) * | 1978-01-30 | 1983-09-15 | Klöckner-Humboldt-Deutz AG, 5000 Köln | Plant for the continuous refining of molten raw material, in particular raw lead or raw tin |
JP3844856B2 (en) * | 1997-09-11 | 2006-11-15 | 住友チタニウム株式会社 | Manufacturing method of high purity silicon |
TW200700316A (en) * | 2005-03-24 | 2007-01-01 | Umicore Nv | Process for the production of si by reduction of sicl4 with liquid zn |
-
2007
- 2007-04-11 NO NO20071852A patent/NO20071852L/en not_active Application Discontinuation
-
2008
- 2008-04-04 WO PCT/NO2008/000127 patent/WO2008127120A1/en active Application Filing
- 2008-04-08 TW TW97112571A patent/TW200906721A/en unknown
Also Published As
Publication number | Publication date |
---|---|
WO2008127120A1 (en) | 2008-10-23 |
TW200906721A (en) | 2009-02-16 |
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Legal Events
Date | Code | Title | Description |
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FC2A | Withdrawal, rejection or dismissal of laid open patent application |