NO20071852L - Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride - Google Patents

Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride

Info

Publication number
NO20071852L
NO20071852L NO20071852A NO20071852A NO20071852L NO 20071852 L NO20071852 L NO 20071852L NO 20071852 A NO20071852 A NO 20071852A NO 20071852 A NO20071852 A NO 20071852A NO 20071852 L NO20071852 L NO 20071852L
Authority
NO
Norway
Prior art keywords
zinc
silicon
equipment
zinc chloride
high purity
Prior art date
Application number
NO20071852A
Other languages
Norwegian (no)
Inventor
Per Bakke
Kare Kristiansen
Original Assignee
Norsk Hydro As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norsk Hydro As filed Critical Norsk Hydro As
Priority to NO20071852A priority Critical patent/NO20071852L/en
Priority to PCT/NO2008/000127 priority patent/WO2008127120A1/en
Priority to TW97112571A priority patent/TW200906721A/en
Publication of NO20071852L publication Critical patent/NO20071852L/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B61/00Obtaining metals not elsewhere provided for in this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00Feed or outlet devices; Feed or outlet control devices
    • B01J4/001Feed or outlet devices as such, e.g. feeding tubes
    • B01J4/002Nozzle-type elements
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/027Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00Compounds of zinc
    • C01G9/04Halides
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00General methods of reducing to metals
    • C22B5/02Dry methods smelting of sulfides or formation of mattes
    • C22B5/04Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/18Details relating to the spatial orientation of the reactor
    • B01J2219/182Details relating to the spatial orientation of the reactor horizontal
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/19Details relating to the geometry of the reactor
    • B01J2219/192Details relating to the geometry of the reactor polygonal
    • B01J2219/1923Details relating to the geometry of the reactor polygonal square or square-derived
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00Obtaining refractory metals
    • C22B34/10Obtaining titanium, zirconium or hafnium
    • C22B34/12Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
    • C22B34/1263Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
    • C22B34/1268Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
    • C22B34/1272Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams reduction of titanium halides, e.g. Kroll process

Abstract

Prosess og utstyr for å bringe silisiumtetraklorid til å reagere med flytende sink for å fremstille silisium og sinkklorid, der reaksjonen finner sted i en reaktor (1). Silisiumtetrakloridgass sprøytes kontinuerlig inn gjennom en eller flere dyser (7) til en strøm av smeltet sink (5) i en reaksjonssone (2) av reaktoren der temperaturen er over smeltepunktet til sink (>419 ºC) og under koketemperaturen til sinkklorid ved 1 atmosfæres trykk (732 ºC). Reaksjonsproduktene, silisium og sinkklorid, samles i en separasjonssone (3) som de kan tas ut fra. Med den foreliggende nye prosessen og utstyret kan silisium med høy renhet produseres effektivt og billig.Process and equipment for reacting silicon tetrachloride with liquid zinc to produce silicon and zinc chloride, where the reaction takes place in a reactor (1). Silicon tetrachloride gas is continuously injected through one or more nozzles (7) into a stream of molten zinc (5) in a reaction zone (2) of the reactor where the temperature is above the melting point of zinc (> 419 ° C) and below the boiling temperature to zinc chloride at 1 atmospheric pressure. (732 ºC). The reaction products, silicon and zinc chloride, are collected in a separation zone (3) from which they can be removed. With the present new process and equipment, high purity silicon can be produced efficiently and cheaply.

NO20071852A 2007-04-11 2007-04-11 Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride NO20071852L (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
NO20071852A NO20071852L (en) 2007-04-11 2007-04-11 Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride
PCT/NO2008/000127 WO2008127120A1 (en) 2007-04-11 2008-04-04 Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride
TW97112571A TW200906721A (en) 2007-04-11 2008-04-08 Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20071852A NO20071852L (en) 2007-04-11 2007-04-11 Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride

Publications (1)

Publication Number Publication Date
NO20071852L true NO20071852L (en) 2008-10-13

Family

ID=39864133

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20071852A NO20071852L (en) 2007-04-11 2007-04-11 Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride

Country Status (3)

Country Link
NO (1) NO20071852L (en)
TW (1) TW200906721A (en)
WO (1) WO2008127120A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2415711A1 (en) 2010-08-05 2012-02-08 Hycore ANS Process and apparatus for the preparation and recovery of high purity silicon
TWI471267B (en) * 2011-10-12 2015-02-01 C S Lab In Technology Ltd Manufacture of high purity silicon fine particles

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1582780A (en) * 1968-01-10 1969-10-10
DE2803858C2 (en) * 1978-01-30 1983-09-15 Klöckner-Humboldt-Deutz AG, 5000 Köln Plant for the continuous refining of molten raw material, in particular raw lead or raw tin
JP3844856B2 (en) * 1997-09-11 2006-11-15 住友チタニウム株式会社 Manufacturing method of high purity silicon
TW200700316A (en) * 2005-03-24 2007-01-01 Umicore Nv Process for the production of si by reduction of sicl4 with liquid zn

Also Published As

Publication number Publication date
WO2008127120A1 (en) 2008-10-23
TW200906721A (en) 2009-02-16

Similar Documents

Publication Publication Date Title
NO20093163L (en) High purity silicon metal recycling process
EA200700906A1 (en) LOW-TEMPERATURE INDUSTRIAL PROCESS
WO2009143264A3 (en) Direct silicon or reactive metal casting
CN103130197B (en) Continuous-pressure-changing rectification method and device for preparing medicine-level sulfoxide chloride
WO2017066269A8 (en) Method to remove metals from petroleum
NO20080549L (en) Set of processes to remove impurities from a silicon production plant
MY156940A (en) System and methods for distributing gas in a chemical vapor deposition reactor
TW200801259A (en) Production process for high purity polycrystal silicon and production apparatus for the same
EA200702060A1 (en) METHOD OF OBTAINING Si BY MEAN REDUCTION BY SILICIDE FLUID Zn
WO2008146741A1 (en) Process and apparatus for producing trichlorosilane and process for producing polycrystalline silicon
WO2010027782A3 (en) Magnesiothermic methods of producing high-purity solution
CA2610918A1 (en) Processes for treating aluminium dross residues
WO2011007231A3 (en) Process and apparatus for the thermal treatment of refinery sludge
MY182711A (en) Process for the production of dialkyl succinate
NO20071852L (en) Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride
WO2013115711A3 (en) Silicon carbide crystal growth in a cvd reactor using chlorinated chemistry
NO331026B1 (en) Process for producing high pure silicon
JP2014528899A5 (en)
MX2016007028A (en) Separation processing method for a product stream of a dimethyl ether reactor.
WO2015011070A3 (en) Method for producing isocyanates
CN103073452A (en) Method for removing phosgene
CN104072473B (en) A kind of production technique of silicofluoric acid synthesizing fluoroethylene carbonate
IN2012DN01278A (en)
CN108780737A (en) The production method of electronic material high-purity pyridine
CN201634438U (en) Apparatus for refining trichlorosilane

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application