NO20060576L - Abrasive partikler for kjemisk mekanisk polering - Google Patents
Abrasive partikler for kjemisk mekanisk poleringInfo
- Publication number
- NO20060576L NO20060576L NO20060576A NO20060576A NO20060576L NO 20060576 L NO20060576 L NO 20060576L NO 20060576 A NO20060576 A NO 20060576A NO 20060576 A NO20060576 A NO 20060576A NO 20060576 L NO20060576 L NO 20060576L
- Authority
- NO
- Norway
- Prior art keywords
- abrasive particles
- nanometers
- mechanical polishing
- chemical mechanical
- volume
- Prior art date
Links
- 239000002245 particle Substances 0.000 title abstract 6
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48668603P | 2003-07-11 | 2003-07-11 | |
PCT/US2004/021998 WO2005007770A1 (en) | 2003-07-11 | 2004-07-09 | Abrasive particles for chemical mechanical polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
NO20060576L true NO20060576L (no) | 2006-02-03 |
Family
ID=34079279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO20060576A NO20060576L (no) | 2003-07-11 | 2006-02-03 | Abrasive partikler for kjemisk mekanisk polering |
Country Status (17)
Country | Link |
---|---|
US (1) | US20060175295A1 (ja) |
EP (1) | EP1660606B1 (ja) |
JP (1) | JP2007531631A (ja) |
KR (1) | KR101134827B1 (ja) |
CN (1) | CN1849379B (ja) |
AU (1) | AU2004257233A1 (ja) |
BR (1) | BRPI0412515A (ja) |
CA (1) | CA2532114A1 (ja) |
DK (1) | DK1660606T3 (ja) |
ES (1) | ES2436215T3 (ja) |
MX (1) | MXPA06000251A (ja) |
NO (1) | NO20060576L (ja) |
PL (1) | PL1660606T3 (ja) |
PT (1) | PT1660606E (ja) |
RU (1) | RU2356926C2 (ja) |
TW (1) | TWI415926B (ja) |
WO (1) | WO2005007770A1 (ja) |
Families Citing this family (56)
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KR100662546B1 (ko) * | 2005-03-07 | 2006-12-28 | 제일모직주식회사 | 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법 |
DE102005017372A1 (de) * | 2005-04-14 | 2006-10-19 | Degussa Ag | Wässrige Ceroxiddispersion |
TWI506621B (zh) * | 2005-12-22 | 2015-11-01 | Kao Corp | 硬碟基板用研磨液組合物 |
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JP2007220995A (ja) * | 2006-02-17 | 2007-08-30 | Fujifilm Corp | 金属用研磨液 |
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JP5007384B2 (ja) * | 2006-10-18 | 2012-08-22 | 株式会社荏原製作所 | 触媒支援型化学加工方法及び装置 |
US20080085412A1 (en) * | 2006-10-04 | 2008-04-10 | Ortiz C Yolanda | Silica-coated metal oxide sols having variable metal oxide to silica ratio |
JP4665886B2 (ja) * | 2006-10-27 | 2011-04-06 | 富士電機デバイステクノロジー株式会社 | 垂直磁気記録媒体、垂直磁気記録媒体用基板、および、それらの製造方法 |
US7837888B2 (en) * | 2006-11-13 | 2010-11-23 | Cabot Microelectronics Corporation | Composition and method for damascene CMP |
US7976723B2 (en) * | 2007-05-17 | 2011-07-12 | International Business Machines Corporation | Method for kinetically controlled etching of copper |
US20090001373A1 (en) * | 2007-06-26 | 2009-01-01 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Electrode of aluminum-alloy film with low contact resistance, method for production thereof, and display unit |
EP2048207A1 (en) * | 2007-10-11 | 2009-04-15 | STMicroelectronics S.r.l. | Method of planarizing chalcogenide alloys, in particular for use in phase change memory devices |
JP5270303B2 (ja) * | 2008-10-31 | 2013-08-21 | 日揮触媒化成株式会社 | 研磨用シリカゾルおよびその製造方法 |
JP5326638B2 (ja) * | 2009-02-18 | 2013-10-30 | 富士電機株式会社 | 磁気記録媒体用ガラス基板の製造方法、それが使用される磁気記録媒体用ガラス基板、および、垂直磁気記録媒体 |
US8382016B2 (en) * | 2009-02-25 | 2013-02-26 | Thiele Kaolin Company | Nano particle mineral pigment |
US20140234639A1 (en) * | 2013-02-21 | 2014-08-21 | Prakash B Malla | Self binding nano particle mineral pigment |
CN101928521B (zh) * | 2009-06-26 | 2014-09-03 | 盟智科技股份有限公司 | 研浆组成物及使用该研浆组成物的金属镶嵌结构制造方法 |
MY164919A (en) * | 2009-09-11 | 2018-02-15 | First Solar Inc | Photovoltaic back contact |
US20110117696A1 (en) * | 2009-11-19 | 2011-05-19 | Air Liquide Electronics U.S. Lp | CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS |
WO2011099624A1 (ja) * | 2010-02-15 | 2011-08-18 | 三菱瓦斯化学株式会社 | 銅層及びモリブデン層を含む多層薄膜用エッチング液 |
JP5617387B2 (ja) * | 2010-07-06 | 2014-11-05 | 富士電機株式会社 | 垂直磁気記録媒体用基板の製造方法、および、該製造方法により製造される垂直磁気記録媒体用基板 |
US20130200038A1 (en) * | 2010-09-08 | 2013-08-08 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices |
CN103210047B (zh) * | 2010-09-08 | 2018-07-17 | 巴斯夫欧洲公司 | 含n取代的二氮烯*二氧化物和/或n’-羟基-二氮烯*氧化物盐的含水抛光组合物 |
WO2012032451A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films |
JPWO2012036087A1 (ja) * | 2010-09-15 | 2014-02-03 | 旭硝子株式会社 | 研磨剤および研磨方法 |
JP5979872B2 (ja) * | 2011-01-31 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
TWI605112B (zh) * | 2011-02-21 | 2017-11-11 | Fujimi Inc | 研磨用組成物 |
JP5979871B2 (ja) * | 2011-03-09 | 2016-08-31 | 花王株式会社 | 磁気ディスク基板の製造方法 |
US20120264303A1 (en) * | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
KR20140059216A (ko) | 2011-08-01 | 2014-05-15 | 바스프 에스이 | 특정 유기 화합물을 포함하는 CMP 조성물의 존재하에서 원소 게르마늄 및/또는 Si₁xGex 재료의 화학적 기계적 연마를 포함하는 반도체 디바이스의 제조 방법 |
CN102344761A (zh) * | 2011-08-03 | 2012-02-08 | 南通海迅天恒纳米科技有限公司 | 一种铈掺杂二氧化硅溶胶的制备方法 |
WO2013077368A1 (ja) * | 2011-11-25 | 2013-05-30 | 株式会社 フジミインコーポレーテッド | 研磨用組成物 |
JP6077208B2 (ja) * | 2011-11-25 | 2017-02-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP6035346B2 (ja) * | 2011-12-21 | 2016-11-30 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 半導体装置の製造方法及びcmp組成物の使用方法 |
BR112014017050B1 (pt) * | 2012-01-10 | 2021-05-11 | Saint-Gobain Ceramics & Plastics, Inc. | partícula abrasiva moldada |
US9896604B2 (en) | 2013-03-15 | 2018-02-20 | Ecolab Usa Inc. | Methods of polishing sapphire surfaces |
JP2013177617A (ja) * | 2013-05-09 | 2013-09-09 | Jgc Catalysts & Chemicals Ltd | 研磨用シリカゾルおよび研磨用組成物 |
EP2810997A1 (en) * | 2013-06-05 | 2014-12-10 | Basf Se | A chemical mechanical polishing (cmp) composition |
JP6407582B2 (ja) * | 2013-07-03 | 2018-10-17 | Hoya株式会社 | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、転写用マスクの製造方法、及び基板加工装置 |
US9190091B2 (en) * | 2013-08-02 | 2015-11-17 | HGST Netherlands, B.V. | Composition and method for planarized bit-patterned magnetic media |
US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
US20150114928A1 (en) * | 2013-10-30 | 2015-04-30 | Jia-Ni Chu | Abrasive Particles for Chemical Mechanical Polishing |
CN104650739A (zh) * | 2013-11-22 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种用于抛光二氧化硅基材的化学机械抛光液 |
WO2016136447A1 (ja) * | 2015-02-26 | 2016-09-01 | 堺化学工業株式会社 | 負帯電性基板の研磨方法、及び、高表面平滑性の負帯電性基板の製造方法 |
US10414947B2 (en) * | 2015-03-05 | 2019-09-17 | Cabot Microelectronics Corporation | Polishing composition containing ceria particles and method of use |
US9505952B2 (en) * | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
CN105463467A (zh) * | 2015-11-30 | 2016-04-06 | 江苏中晶科技有限公司 | 高精密弱碱性不锈钢抛光液及其制备方法 |
US10066126B2 (en) * | 2016-01-06 | 2018-09-04 | Cabot Microelectronics Corporation | Tungsten processing slurry with catalyst |
US10253216B2 (en) * | 2016-07-01 | 2019-04-09 | Versum Materials Us, Llc | Additives for barrier chemical mechanical planarization |
US10752785B2 (en) * | 2016-09-09 | 2020-08-25 | IndusCo, Ltd. | Anti-slip botanical antimicrobial microemulsions |
CN108728849A (zh) * | 2018-05-17 | 2018-11-02 | 合肥协耀玻璃制品有限公司 | 一种不锈钢材料用抛光剂及其制备方法 |
CN108587478B (zh) * | 2018-07-03 | 2020-09-25 | 中国人民解放军国防科技大学 | 一种改性纳米二氧化硅复合抛光液及其应用 |
KR102526666B1 (ko) | 2021-06-17 | 2023-04-26 | 배진범 | 정전기 방지용 연마체 |
CN115109520A (zh) * | 2022-06-01 | 2022-09-27 | 大连理工大学 | 用于单晶金刚石化学机械抛光加工的抛光液及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6527817B1 (en) * | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
US6471884B1 (en) * | 2000-04-04 | 2002-10-29 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with an amino acid-containing composition |
MY118582A (en) * | 2000-05-12 | 2004-12-31 | Kao Corp | Polishing composition |
JP4251516B2 (ja) * | 2000-05-12 | 2009-04-08 | 花王株式会社 | 研磨液組成物 |
EP2045307A1 (en) * | 2000-05-12 | 2009-04-08 | Nissan Chemical Industries, Ltd. | Polishing composition |
US6976905B1 (en) * | 2000-06-16 | 2005-12-20 | Cabot Microelectronics Corporation | Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system |
JP3945745B2 (ja) * | 2001-03-09 | 2007-07-18 | 三井金属鉱業株式会社 | セリウム系研摩材及び研摩材スラリー並びにセリウム系研摩材の製造方法 |
JP2003197573A (ja) * | 2001-12-26 | 2003-07-11 | Ekc Technology Kk | メタル膜絶縁膜共存表面研磨用コロイダルシリカ |
JP3748410B2 (ja) * | 2001-12-27 | 2006-02-22 | 株式会社東芝 | 研磨方法及び半導体装置の製造方法 |
US6896942B2 (en) * | 2002-04-17 | 2005-05-24 | W. R. Grace & Co. -Conn. | Coating composition comprising colloidal silica and glossy ink jet recording sheets prepared therefrom |
-
2004
- 2004-07-09 CA CA002532114A patent/CA2532114A1/en not_active Abandoned
- 2004-07-09 AU AU2004257233A patent/AU2004257233A1/en not_active Abandoned
- 2004-07-09 BR BRPI0412515-0A patent/BRPI0412515A/pt not_active IP Right Cessation
- 2004-07-09 JP JP2006520233A patent/JP2007531631A/ja active Pending
- 2004-07-09 PL PL04777834T patent/PL1660606T3/pl unknown
- 2004-07-09 CN CN2004800260037A patent/CN1849379B/zh not_active Expired - Fee Related
- 2004-07-09 US US10/564,842 patent/US20060175295A1/en not_active Abandoned
- 2004-07-09 PT PT47778345T patent/PT1660606E/pt unknown
- 2004-07-09 MX MXPA06000251A patent/MXPA06000251A/es unknown
- 2004-07-09 KR KR1020067000642A patent/KR101134827B1/ko not_active IP Right Cessation
- 2004-07-09 TW TW093120616A patent/TWI415926B/zh active
- 2004-07-09 DK DK04777834.5T patent/DK1660606T3/da active
- 2004-07-09 WO PCT/US2004/021998 patent/WO2005007770A1/en active Application Filing
- 2004-07-09 RU RU2006104117/04A patent/RU2356926C2/ru not_active IP Right Cessation
- 2004-07-09 EP EP04777834.5A patent/EP1660606B1/en not_active Revoked
- 2004-07-09 ES ES04777834T patent/ES2436215T3/es not_active Expired - Lifetime
-
2006
- 2006-02-03 NO NO20060576A patent/NO20060576L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR101134827B1 (ko) | 2012-04-13 |
RU2356926C2 (ru) | 2009-05-27 |
WO2005007770A1 (en) | 2005-01-27 |
RU2006104117A (ru) | 2006-07-27 |
MXPA06000251A (es) | 2006-03-30 |
BRPI0412515A (pt) | 2006-09-19 |
KR20060041220A (ko) | 2006-05-11 |
DK1660606T3 (da) | 2013-12-02 |
CA2532114A1 (en) | 2005-01-27 |
ES2436215T3 (es) | 2013-12-27 |
AU2004257233A1 (en) | 2005-01-27 |
EP1660606B1 (en) | 2013-09-04 |
TW200516132A (en) | 2005-05-16 |
CN1849379B (zh) | 2011-12-14 |
PL1660606T3 (pl) | 2014-02-28 |
US20060175295A1 (en) | 2006-08-10 |
PT1660606E (pt) | 2013-12-09 |
CN1849379A (zh) | 2006-10-18 |
EP1660606A1 (en) | 2006-05-31 |
TWI415926B (zh) | 2013-11-21 |
JP2007531631A (ja) | 2007-11-08 |
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Legal Events
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FC2A | Withdrawal, rejection or dismissal of laid open patent application |