NO20026107D0 - Fremgangsmåte for dannelse av en sjiktstruktur på et substrat - Google Patents

Fremgangsmåte for dannelse av en sjiktstruktur på et substrat

Info

Publication number
NO20026107D0
NO20026107D0 NO20026107A NO20026107A NO20026107D0 NO 20026107 D0 NO20026107 D0 NO 20026107D0 NO 20026107 A NO20026107 A NO 20026107A NO 20026107 A NO20026107 A NO 20026107A NO 20026107 D0 NO20026107 D0 NO 20026107D0
Authority
NO
Norway
Prior art keywords
substrate
forming
layer structure
layer
Prior art date
Application number
NO20026107A
Other languages
English (en)
Other versions
NO20026107L (no
Inventor
Ingo Schwirtlich
Wilfried Schmidt
Hilmar Von Campe
Original Assignee
Rwe Schott Solar Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP02003042A external-priority patent/EP1321446A1/de
Application filed by Rwe Schott Solar Gmbh filed Critical Rwe Schott Solar Gmbh
Publication of NO20026107D0 publication Critical patent/NO20026107D0/no
Publication of NO20026107L publication Critical patent/NO20026107L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1283—Control of temperature, e.g. gradual temperature increase, modulation of temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
NO20026107A 2001-12-20 2002-12-19 Fremgangsmåte for dannelse av en sjiktstruktur på et substrat NO20026107L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10163100 2001-12-20
EP02003042A EP1321446A1 (de) 2001-12-20 2002-02-12 Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat

Publications (2)

Publication Number Publication Date
NO20026107D0 true NO20026107D0 (no) 2002-12-19
NO20026107L NO20026107L (no) 2003-06-23

Family

ID=26010824

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20026107A NO20026107L (no) 2001-12-20 2002-12-19 Fremgangsmåte for dannelse av en sjiktstruktur på et substrat

Country Status (3)

Country Link
US (1) US7253355B2 (no)
JP (1) JP3961941B2 (no)
NO (1) NO20026107L (no)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
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GB2432722A (en) * 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
GB2432723B (en) * 2005-11-25 2010-12-08 Seiko Epson Corp Electrochemical cell and method of manufacture
GB2432721B (en) * 2005-11-25 2011-06-22 Seiko Epson Corp Electrochemical cell structure and method of fabrication
US20090250108A1 (en) * 2008-04-02 2009-10-08 Applied Materials, Inc. Silicon carbide for crystalline silicon solar cell surface passivation
DE102009043916A1 (de) * 2009-05-19 2010-12-16 Schott Solar Ag Verfahren zur Herstellung elektrischer Kontakte auf einem Halbleiterbauelement
WO2011005586A2 (en) * 2009-06-24 2011-01-13 Buttress David G Apparatus and method for joining solar receiver tubes
WO2011025925A2 (en) * 2009-08-30 2011-03-03 David Buttress Apparatus and method for field welding solar receiver tubes
CN106029949B (zh) * 2014-01-17 2020-02-21 Iones株式会社 用于形成具有复合涂层粒度的涂层的方法和由此形成的涂层
US10490682B2 (en) 2018-03-14 2019-11-26 National Mechanical Group Corp. Frame-less encapsulated photo-voltaic solar panel supporting solar cell modules encapsulated within multiple layers of optically-transparent epoxy-resin materials

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Publication number Priority date Publication date Assignee Title
US2874341A (en) * 1954-11-30 1959-02-17 Bell Telephone Labor Inc Ohmic contacts to silicon bodies
US3338693A (en) * 1964-06-25 1967-08-29 Bausch & Lomb Fusion of glass particles with brief high intensity light flashes
US3653970A (en) * 1969-04-30 1972-04-04 Nasa Method of coating solar cell with borosilicate glass and resultant product
US4320251A (en) * 1980-07-28 1982-03-16 Solamat Inc. Ohmic contacts for solar cells by arc plasma spraying
JPS63265872A (ja) * 1987-04-23 1988-11-02 Inax Corp 繊維強化セラミツクスの製法
US5151386A (en) * 1990-08-01 1992-09-29 Mobil Solar Energy Corporation Method of applying metallized contacts to a solar cell
DE4133190A1 (de) * 1991-10-07 1993-04-08 Basf Ag Formkoerper
JP3070790B2 (ja) 1992-03-06 2000-07-31 キヤノン株式会社 太陽電池モジュール
JP3112339B2 (ja) 1992-03-31 2000-11-27 キヤノン株式会社 太陽電池モジュール
JPH06334205A (ja) 1993-05-25 1994-12-02 Matsushita Electric Ind Co Ltd 太陽電池
US5552351A (en) * 1993-11-29 1996-09-03 Wisconsin Alumni Research Foundation Ceramic membranes having macroscopic channels
US5616185A (en) * 1995-10-10 1997-04-01 Hughes Aircraft Company Solar cell with integrated bypass diode and method
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
JP3722326B2 (ja) * 1996-12-20 2005-11-30 三菱電機株式会社 太陽電池の製造方法
US6127202A (en) * 1998-07-02 2000-10-03 International Solar Electronic Technology, Inc. Oxide-based method of making compound semiconductor films and making related electronic devices
JP2000100483A (ja) * 1998-09-22 2000-04-07 Sharp Corp 光電変換素子及びその製造方法及びこれを用いた太陽電池
US6358567B2 (en) * 1998-12-23 2002-03-19 The Regents Of The University Of California Colloidal spray method for low cost thin coating deposition
JP2000327460A (ja) 1999-05-20 2000-11-28 Nissan Motor Co Ltd 耐摩耗性セラミックスおよびその製造方法
DE19930043A1 (de) * 1999-06-30 2001-01-04 Wolf Systeme Ag Beleuchtungsvorrichtung für die elektronische Bildverarbeitung
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
EP1321446A1 (de) * 2001-12-20 2003-06-25 RWE Solar GmbH Verfahren zum Ausbilden einer Schichtstruktur auf einem Substrat
JP3895254B2 (ja) * 2002-10-07 2007-03-22 シャープ株式会社 太陽電池セルの製造方法

Also Published As

Publication number Publication date
JP2003218370A (ja) 2003-07-31
NO20026107L (no) 2003-06-23
US20030121545A1 (en) 2003-07-03
JP3961941B2 (ja) 2007-08-22
US7253355B2 (en) 2007-08-07

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