NO173617B - MIXTURE ON METHYL CHLORIDE BASIS FOR PHOTORESIST MOVE REMOVAL - Google Patents

MIXTURE ON METHYL CHLORIDE BASIS FOR PHOTORESIST MOVE REMOVAL Download PDF

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Publication number
NO173617B
NO173617B NO87873030A NO873030A NO173617B NO 173617 B NO173617 B NO 173617B NO 87873030 A NO87873030 A NO 87873030A NO 873030 A NO873030 A NO 873030A NO 173617 B NO173617 B NO 173617B
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mixture
photoresist
mixture according
total amount
methanol
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NO87873030A
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NO873030D0 (en
NO873030L (en
NO173617C (en
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Michel Campos
Jean-Charles Boussaguet
Jean-Philippe Letullier
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Atochem
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Publication of NO873030D0 publication Critical patent/NO873030D0/en
Publication of NO873030L publication Critical patent/NO873030L/en
Publication of NO173617B publication Critical patent/NO173617B/en
Publication of NO173617C publication Critical patent/NO173617C/en

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C17/00—Preparation of halogenated hydrocarbons
    • C07C17/38—Separation; Purification; Stabilisation; Use of additives
    • C07C17/42—Use of additives, e.g. for stabilisation
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5018—Halogenated solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
    • C23G5/028—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons
    • C23G5/02854—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing halogenated hydrocarbons characterised by the stabilising or corrosion inhibiting additives
    • C23G5/02861—Oxygen-containing compounds
    • C23G5/0288—Epoxy compounds
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Dental Preparations (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Paints Or Removers (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Composition and its use for removing photoresist films from printed circuits in the electronics industry. Propylene oxide, methanol and methyl tert-butyl ether are added to the methylene chloride.

Description

Foreliggende oppfinnelse angår en blanding på basis av metylenklorid samt dettes anvendelse for å fjerne fotore-sistf ilmer fra trykkede kretser i den elektroniske industri. The present invention relates to a mixture based on methylene chloride and its use for removing photoresist films from printed circuits in the electronic industry.

Et av trinnene ved fremstilling av trykte kretser består i, ved hjelp av et oppløsningsmiddel, å trekke av en halvpoly-merisert film i forbindelse med impregnering og gravering. Denne tørre eller "fotoresist" film som er polymerisert"under ultrafiolett bestråling, motstandsdyktig mot vann, mot fremkallere og graveringsmidler, mens deler av filmen oppløses under fremkallingsprosessen. One of the steps in the production of printed circuits consists in, with the help of a solvent, pulling off a semi-polymerized film in connection with impregnation and engraving. This dry or "photoresist" film that is polymerized" under ultraviolet irradiation, resistant to water, to developers and etching agents, while parts of the film dissolve during the development process.

Man kjenner diverse preparater for å avtrekke filmer av fotoresisttypen: US-PS 3 789 007 beskriver en blanding av etylenklorid inneholdende 3-15 vekt-# metanol; US-PS 3 813 309 beskriver en blanding av klorerte oppløsningsmidler inneholdende en sterk organisk syre, et amin og et keton og US-PS 4 438 192 beskriver metylenklorid inneholdende metanol, metylformiat og eventuelt propylenoksyd. Various preparations are known for pulling off films of the photoresist type: US-PS 3,789,007 describes a mixture of ethylene chloride containing 3-15% methanol by weight; US-PS 3,813,309 describes a mixture of chlorinated solvents containing a strong organic acid, an amine and a ketone and US-PS 4,438,192 describes methylene chloride containing methanol, methyl formate and possibly propylene oxide.

Foreliggende oppfinnelse foreslår å tilveiebringe en blanding for lett og hurtig å kunne trekke av fotoresistfilmer fra emner til trykte kretser idet blandingen kan resirkuleres og brukes om igjen flere ganger. The present invention proposes to provide a mixture for easily and quickly removing photoresist films from blanks for printed circuits, as the mixture can be recycled and reused several times.

I henhold til dette angår foreliggende oppfinnelse en blanding for fjerning av fotoresistfilmer og denne blanding karakteriseres ved at den består av metylenklorid og According to this, the present invention relates to a mixture for removing photoresist films and this mixture is characterized by the fact that it consists of methylene chloride and

a) minst et epoksyd a) at least one epoxide

b) minst en alkohol b) at least one alcohol

c) minst et produkt valgt blant eter og ketoner som er lite oppløselige i vann, idet eterene har 2 til 12 karbonatomer c) at least one product selected from ethers and ketones that are poorly soluble in water, the ethers having 2 to 12 carbon atoms

og de alifatiske ketoner har 6 til 10 karbonatomer. and the aliphatic ketones have 6 to 10 carbon atoms.

Den totale mengde av epoksydet a) som skal benyttes kan ligger mellom 0,05 og 5 vekt-# av den totale masse av blandingen og ligger fortrinnsvis mellom 0,2 og 2$. Epoksyd- ene kan være propylen- eller butylenoksyd idet man foretrek-ker propylenoksyd. The total amount of the epoxide a) to be used can be between 0.05 and 5% by weight of the total mass of the mixture and is preferably between 0.2 and 2%. The epoxides can be propylene or butylene oxide, with propylene oxide being preferred.

Som alkohol benyttes hyppigst rette eller forgrenede C1- 5-alkoholer og velges fortrinnsvis blant metanol, etanol og isopropanol. Fortrinnsvis benyttes metanol. Straight or branched C1-5 alcohols are most frequently used as alcohol and are preferably chosen from methanol, ethanol and isopropanol. Methanol is preferably used.

Den totale mengde alkohol b) kan ligge mellom 0,05 og 5 vekt-$ av den totale masse av blandingen og fortrinnsvis ligger den mellom 2 og 4 K>. The total amount of alcohol b) can be between 0.05 and 5% by weight of the total mass of the mixture and preferably it is between 2 and 4 K>.

Den totale mengde av komponenten c) kan ligge mellom 0,05 og 5 vekt-# av den totale masse og ligger fortrinnsvis mellom 1 og 3%. The total amount of component c) can be between 0.05 and 5% by weight of the total mass and is preferably between 1 and 3%.

Som etere benyttes fortrinnsvis mono-, di- eller trietere med 2 til 12 karbonatomer. Mono-, di- or triethers with 2 to 12 carbon atoms are preferably used as ethers.

Meytl-tert-butyleter, MTBE, og dimetoksymetan er mest foretrukket. Methyl tert-butyl ether, MTBE, and dimethoxymethane are most preferred.

Som ketoner benyttes hyppigst alifatiske C3_ig-ketoner»aceton er foretrukket. As ketones, aliphatic C3-ig ketones are most frequently used »acetone is preferred.

Man kan benytte en eter eller et keton eller en blanding som omfatter diverse produkter som hører til den samme familie eller til to av de ovenfor angitte familier. Man benytter fortrinnsvis MTBE alene idet denne er minst oppløselig i vann (1,3 vekt-# ved 20°C), noe som er en fordel i det tilfelle der man regenererer blandingen ved medføring av damp uten å miste produkt. One can use an ether or a ketone or a mixture comprising various products belonging to the same family or to two of the above-mentioned families. MTBE alone is preferably used as it is the least soluble in water (1.3 wt-# at 20°C), which is an advantage in the case where the mixture is regenerated by entrainment of steam without losing product.

Blandingen ifølge oppfinnelsen fremstilles ved enkel blanding av produktene med metylklorid. Blandingen skjer ved omgivel-sestemperatur og mere spesielt mellom 5 og 30°C. Foreliggende oppfinnelse angår som nevnt også en fremgangsmåte for fjerning av fotoresistfilmer på trykkede kretser og denne fremgangsmåte karakteriseres ved at kretsene bringes i kontakt, med tempring eller behandling, med en blanding som beskrevet ovenfor. The mixture according to the invention is prepared by simply mixing the products with methyl chloride. The mixing takes place at ambient temperature and more particularly between 5 and 30°C. As mentioned, the present invention also relates to a method for removing photoresist films on printed circuits and this method is characterized by bringing the circuits into contact, with tempering or treatment, with a mixture as described above.

Man kan også benytte en kontinuerlig behandling ved påblåsing av blandingen. Efter fjerning av fotoresistfilmen blir kretsen spylt og eventuelt tørket i luft. You can also use a continuous treatment by blowing on the mixture. After removing the photoresist film, the circuit is rinsed and possibly dried in air.

De følgende eksempler illustrerer oppfinnelsen uten å begrense den. I eksemplene er den benyttede fotoresist en harpiks hovedsakelig bestående av polymetakrylat og konsen-trasjonene er på vektbasis. The following examples illustrate the invention without limiting it. In the examples, the photoresist used is a resin mainly consisting of polymethacrylate and the concentrations are on a weight basis.

Eksemplene 1 til 3. Examples 1 to 3.

Man fremstiller blandinger med følgende sammensetning: Mixtures with the following composition are produced:

Man måler derefter metningen av blandingen i fotoresisten. Til 100 g blanding settes noen gram fotoresist. Det hele omrøres i 15 min. og derefter tilsetter man fotoresist inntil metning. Analysene gjennomføres ved 20°C. Efter dekantering gjennomføres en tørrekstrahering på en klar analyseprøve. Resultatene er angitt i Tabell 1 nedenfor. The saturation of the mixture in the photoresist is then measured. Add a few grams of photoresist to 100 g of mixture. The whole thing is stirred for 15 min. and then photoresist is added until saturation. The analyzes are carried out at 20°C. After decanting, a dry extraction is carried out on a clear analytical sample. The results are shown in Table 1 below.

Man måler derefter blandingenes mulighet til resirkulering. I en laboratoriekolbe på 100 ml utstyrt for destillasjon av oppløsningsmidler chargeres blanding 1 inneholdende 3% fotoresist for destillasjon av gjenvinning av blandingen. Det gjenvundne destillat blir så "rechargert" med 3% fotoresist og så destillert. Denne operasjon gjennomføres 6 ganger i rekkefølge. Man gjennomfører den samme prøve for blandingene 2 og 3. Resultatene er angitt i Tabell 1 nedenfor. The mixture's ability to be recycled is then measured. In a 100 ml laboratory flask equipped for the distillation of solvents, mixture 1 containing 3% photoresist is charged for the distillation of recovery of the mixture. The recovered distillate is then "recharged" with 3% photoresist and then distilled. This operation is carried out 6 times in sequence. The same test is carried out for mixtures 2 and 3. The results are shown in Table 1 below.

Hastighet for utvikling av fotoresisten: Speed of development of the photoresist:

Kobberstykker på 10 cm x 1 cm, dekket med fotoresist, nedsenkes i bad med de forskjellige sammensetninger og under-kastes en konstant agitering ved temperatur på 25 °C. Den totale avdekningstid for en overflate av prøven måles. Copper pieces of 10 cm x 1 cm, covered with photoresist, are immersed in baths with the various compositions and subjected to constant agitation at a temperature of 25 °C. The total exposure time for a surface of the sample is measured.

Prøvene gjennomføres med nye blandinger og blandinger som har vært underkastet seks resirkuleringer i den foregående prøve. Resultatene finnes i Tabell 1. The tests are carried out with new mixtures and mixtures that have been subjected to six recyclings in the previous test. The results can be found in Table 1.

Eksempel 4. Example 4.

Man måler evnen hos blandingene til å kunne regenereres ved dampdestillasjon. I dette eksempel sammenlignes en blanding ifølge oppfinnelsen inneholdende metylenklorid med metanol, propylenoksyd og MTBE (blanding 5) med en blanding som ikke stemmer overens med oppfinnelsen og som inneholder metylenklorid, metanol, propylenoksyd og metylformeat (blanding 4). The ability of the mixtures to be regenerated by steam distillation is measured. In this example, a mixture according to the invention containing methylene chloride with methanol, propylene oxide and MTBE (mixture 5) is compared with a mixture which does not correspond to the invention and which contains methylene chloride, methanol, propylene oxide and methyl formate (mixture 4).

I en dampdestillasjons-apparatur på 100 ml blir en blanding inneholdende 3 vekt-# fotoresist destillert. Kondensatet rechargeres så med 3% fotoresist og bearbeides på ny idet denne bearbeiding gjennomføres fire ganger. Resultatene er angitt i Tabell 2. Blandingen med MTBE er adskillig mindre endret enn den andre. Det er tilstrekkelig å tilsette metanol for å oppnå en brukbar ny blanding. In a 100 ml steam distillation apparatus, a mixture containing 3 wt # of photoresist is distilled. The condensate is then recharged with 3% photoresist and processed again, this processing being carried out four times. The results are shown in Table 2. The mixture with MTBE is significantly less changed than the other. It is sufficient to add methanol to obtain a usable new mixture.

Claims (9)

1. Blanding for fjerning av fotoresistfilmer,karakterisert vedat den består av metylenklorid og a) minst et epoksyd b) minst en alkohol c) minst et produkt valgt blant eter og ketoner som er lite oppløselige i vann, idet eterene har 2 til 12 karbonatomer og de alifatiske ketoner har 6 til 10 karbonatomer.1. Mixture for removing photoresist films, characterized in that it consists of methylene chloride and a) at least one epoxide b) at least one alcohol c) at least one product selected from ethers and ketones which are poorly soluble in water, the ethers having 2 to 12 carbon atoms and the aliphatic ketones have 6 to 10 carbon atoms. 2. Blanding ifølge krav 1,karakterisert vedat epoksydet velges blant propylenoksyd og butylenoksyd.2. Mixture according to claim 1, characterized in that the epoxide is selected from propylene oxide and butylene oxide. 3. Blanding ifølge krav 1 eller 2,karakterisertved at alkoholen velges blant lineære eller forgrenede Ci_5-alkoholer og fortrinnsvis metanol.3. Mixture according to claim 1 or 2, characterized in that the alcohol is selected from linear or branched Ci_5 alcohols and preferably methanol. 4 . Blanding ifølge et hvilket som helst av kravene 1-3,karakterisert vedat eteren er metyltertbutyleter eller dimetoksymetan.4. Mixture according to any one of claims 1-3, characterized in that the ether is methyl tert-butyl ether or dimethoxymethane. 5 . Blanding ifølge et hvilket som helst av kravene 1-4,karakterisert vedat den totale mengde av a) er mellom 0,05 og 5 vekt-# av den totale mengde av blandingen, fortrinnsvis mellom 0,2 og 2 %.5 . Mixture according to any one of claims 1-4, characterized in that the total amount of a) is between 0.05 and 5% by weight of the total amount of the mixture, preferably between 0.2 and 2%. 6. Blanding ifølge et hvilket som helst av kravene 1-5,karakterisert vedat den totale mengde av b) ligger mellom 0,05 og 5 vekt-# av den totale mengde av blandingen, fortrinnsvis mellom 2 og 4$.6. Mixture according to any one of claims 1-5, characterized in that the total amount of b) is between 0.05 and 5% by weight of the total amount of the mixture, preferably between 2 and 4%. 7. Blanding ifølge et hvilket som helst av kravene 1-6,karakterisert vedat den totale mengde av c) ligger mellom 0,05 og 5 vekt-# av den totale mengde av blandingen, fortrinnsvis mellom 1 og 3%.7. Mixture according to any one of claims 1-6, characterized in that the total amount of c) is between 0.05 and 5% by weight of the total amount of the mixture, preferably between 1 and 3%. 8. Blanding ifølge et hvilket som helst av kravene 1-7,karakterisert vedat a) er propylenoksyd, b) er metanol og c) er metyltertbutyleter.8. Mixture according to any one of claims 1-7, characterized in that a) is propylene oxide, b) is methanol and c) is methyl tert-butyl ether. 9. Fremgangsmåte for fjerning av fotoresistfilmer på trykkede kretser,karakterisert vedat kretsene bringes i kontakt, med tempring eller behandling, med en blanding ifølge et hvilket som helst av kravene 1-8.9. Method for removing photoresist films on printed circuits, characterized in that the circuits are brought into contact, with tempering or treatment, with a mixture according to any one of claims 1-8.
NO873030A 1986-07-21 1987-07-20 Methylene chloride based blend to remove photoresist films NO173617C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8610529A FR2601703B1 (en) 1986-07-21 1986-07-21 METHYLENE CHLORIDE COMPOSITION - USE THEREOF FOR REMOVING PHOTORESIST FILMS

Publications (4)

Publication Number Publication Date
NO873030D0 NO873030D0 (en) 1987-07-20
NO873030L NO873030L (en) 1988-01-22
NO173617B true NO173617B (en) 1993-09-27
NO173617C NO173617C (en) 1994-01-05

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ID=9337579

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NO873030A NO173617C (en) 1986-07-21 1987-07-20 Methylene chloride based blend to remove photoresist films

Country Status (12)

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EP (1) EP0258079B1 (en)
JP (1) JPS6330848A (en)
AT (1) ATE72679T1 (en)
CA (1) CA1295205C (en)
DE (1) DE3776737D1 (en)
DK (1) DK170076B1 (en)
ES (1) ES2006203A6 (en)
FI (1) FI84630C (en)
FR (1) FR2601703B1 (en)
GR (1) GR3004213T3 (en)
IE (1) IE59867B1 (en)
NO (1) NO173617C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3068622B2 (en) * 1988-08-30 2000-07-24 キヤノン株式会社 Image processing device
FR2661918B1 (en) * 1990-05-10 1992-07-17 Atochem CLEANING COMPOSITION BASED ON 1,1,1,2,2-PENTAFLUORO-3,3-DICHLORO-PROPANE AND METHYL TERT-BUTYL ETHER.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625763A (en) * 1968-12-04 1971-12-07 Bunker Ramo Conformal coating stripping method and composition
US3646229A (en) * 1970-07-13 1972-02-29 Dow Chemical Co Use of dimethoxymethane to inhibit a methylene chloride-aluminum reaction
CA1049567A (en) * 1973-02-23 1979-02-27 Diamond Shamrock Corporation Inhibition of aromatic compound degradation of methylene chloride
DE2716534A1 (en) * 1976-05-03 1977-12-01 Solvay PROCESS FOR STABILIZATION OF METHYLENE CHLORIDE
US4438192A (en) * 1983-02-14 1984-03-20 The Dow Chemical Company Photoresist stripper composition and method of use
JPS6120946A (en) * 1984-07-10 1986-01-29 Asahi Glass Co Ltd Composition for peeling photoresist

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Publication number Publication date
DK170076B1 (en) 1995-05-15
FR2601703B1 (en) 1993-05-07
IE871958L (en) 1989-01-21
DK376787D0 (en) 1987-07-20
EP0258079B1 (en) 1992-02-19
NO873030D0 (en) 1987-07-20
FI873189A0 (en) 1987-07-20
FR2601703A1 (en) 1988-01-22
DK376787A (en) 1988-01-22
EP0258079A1 (en) 1988-03-02
CA1295205C (en) 1992-02-04
ATE72679T1 (en) 1992-03-15
JPS6330848A (en) 1988-02-09
NO873030L (en) 1988-01-22
ES2006203A6 (en) 1989-04-16
FI84630B (en) 1991-09-13
DE3776737D1 (en) 1992-03-26
JPH0449939B2 (en) 1992-08-12
FI873189A (en) 1988-01-22
FI84630C (en) 1991-12-27
GR3004213T3 (en) 1993-03-31
IE59867B1 (en) 1994-04-20
NO173617C (en) 1994-01-05

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