NO145901B - TOPOL INCLUDING A TRANSISTOR. - Google Patents
TOPOL INCLUDING A TRANSISTOR. Download PDFInfo
- Publication number
- NO145901B NO145901B NO773872A NO773872A NO145901B NO 145901 B NO145901 B NO 145901B NO 773872 A NO773872 A NO 773872A NO 773872 A NO773872 A NO 773872A NO 145901 B NO145901 B NO 145901B
- Authority
- NO
- Norway
- Prior art keywords
- transistor
- emitter
- resistor
- base
- collector
- Prior art date
Links
- 230000001172 regenerating effect Effects 0.000 claims description 7
- 230000007704 transition Effects 0.000 claims 1
- 238000013021 overheating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/30—Modifications for providing a predetermined threshold before switching
Landscapes
- Amplifiers (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
- Bipolar Integrated Circuits (AREA)
Description
Oppfinnelsen vedrører en topol innbefattende en transistor og anordnet til å gå over fra en lavresistiv til en høyresistiv tilstand når en forutbestemt verdi i et spenningsfall over en kollektor-emitterstrekning av transistoren overskrides. The invention relates to a dipole including a transistor and arranged to switch from a low-resistive to a high-resistive state when a predetermined value in a voltage drop across a collector-emitter section of the transistor is exceeded.
Når en transistor er anordnet til å slippe gjennom en stor strøm When a transistor is arranged to pass a large current
og av økonomiske grunner ikke er overdimensjonert, forligger en risiko for overhetning av transistoren i avhengighet av avikelser fra forutsatte verdier av strømmen, transistoren, omgivelsestem-peraturen etc. Enten transistoren gjennomslipper strømmen kon-tinuerlig eller eventuellt pulser den, kan risikoen for overhetning reduseres ved at en kollektor-emitterstrekning i transistoren bringes til å gå over fra en lavresistiv til en høyresistiv tilstand i avhengighet av at en foreskrevet maksimumsverdi i et spenningsfall over kollektor-emitterstrekningen overskrides. and for economic reasons is not over-dimensioned, there is a risk of overheating of the transistor depending on deviations from assumed values of the current, the transistor, the ambient temperature etc. Whether the transistor passes the current continuously or possibly pulses it, the risk of overheating can be reduced by that a collector-emitter section in the transistor is caused to change from a low-resistive to a high-resistive state depending on a prescribed maximum value in a voltage drop across the collector-emitter section being exceeded.
Topolen ifølge oppfinnelsen bringer sin nevnte transistor til The topole according to the invention brings its mentioned transistor to
raskt å gå over fra en lavresistiv til en høyresistiv tilstand i avhengighet av at en forutbestemt verdi i et spenningsfall over dens kollektor-emitterstrekning overskrides. Topolen kan tilkobles i serie med en belastning for å utgjøre en strømbryter til denne. En annen tenkbar anvendelse av topolen er å la dens transistor inngå i f.eks. i et effekttrinn i en forsterker for å danne en innebygd strømbryter i denne. quickly transitioning from a low-resistive to a high-resistive state depending on a predetermined value in a voltage drop across its collector-emitter path being exceeded. The topole can be connected in series with a load to form a circuit breaker for it. Another conceivable application of the dipole is to let its transistor be included in e.g. in a power stage in an amplifier to form a built-in current switch therein.
Topolen i samsvar med oppfinnelsen hvis kjennetegn fremgår av de etterfølgende patentkrav, skal beskrives nærmere under henvisning til den vedlagte tegning som viser topolen i en foretrukket ut-førelsesform. The topole in accordance with the invention, the characteristics of which appear in the subsequent patent claims, shall be described in more detail with reference to the attached drawing which shows the topole in a preferred embodiment.
Tegningen viser en topol som innbefatter en transistor 1 og er anordnet slik at den kan gå over fra en lavresistiv til en høy-resistiv tilstand■når en forutbestemt verdi i et spenningsfall -over en kollektor-emitterstrekning i transistoren 1 overskrides. Ifølge' oppfinnelsen innbefatter topolen en regenerativ terskel-krets 2, anordnet til å bryte en basisstrøm til transistoren 1 i avhengighet av at den forutbestemte verdien i spenningsfallet overskrides. Den regenerative terskelkretsen 2 har en inngang . som omfatter en shunt-motstand 3 med en negativ temperaturkoef-fis'iént~tilpasset til å beholde funksjonen hos topolen uforandret innenfor et foreskrevet temperaturintervall og en spenningsredu-serende seriemotstand 4, og som er tilkoblet over kollektor-emitterstrekningen i transistoren 1 og en motstand 5 koblet med denne. The drawing shows a dipole which includes a transistor 1 and is arranged so that it can pass from a low-resistive to a high-resistive state when a predetermined value in a voltage drop across a collector-emitter section in the transistor 1 is exceeded. According to the invention, the dipole includes a regenerative threshold circuit 2, arranged to break a base current to the transistor 1 depending on the predetermined value in the voltage drop being exceeded. The regenerative threshold circuit 2 has an input. which comprises a shunt resistor 3 with a negative temperature coefficient adapted to keep the function of the dipole unchanged within a prescribed temperature interval and a voltage-reducing series resistor 4, and which is connected across the collector-emitter path in the transistor 1 and a resistor 5 connected with this.
Motstanden 5 er ikke absolutt nødvendig, men kan elimineres, hvor-ved inngangen av den regenerative terskelkretsen 2 blir direkte tilkoblet over kollektor-emitterstrekningen i transistoren 1. Et motsatt alternativ er å tilkoble inngangen av terskelkretsen 2 direkte over motstanden 5. Begge disse alternativene krever dog kritiske endringer av den negative temperaturkoeffisienten i motstanden 3 og av resistansen i motstanden 4 for at topolen skal, innenfor det foreskrevne temperaturintervallet, gå over fra en lav-' resistiv til en høyresistiv tilstand ved samme_forutbestemte verdi hos det nevnte spenningsfall som i den foretrukne utførelsesform. The resistor 5 is not absolutely necessary, but can be eliminated, in which case the input of the regenerative threshold circuit 2 is directly connected across the collector-emitter section of the transistor 1. An opposite alternative is to connect the input of the threshold circuit 2 directly across the resistor 5. Both of these options require however, critical changes of the negative temperature coefficient in the resistor 3 and of the resistance in the resistor 4 so that the dipole shall, within the prescribed temperature interval, pass from a low-resistive to a high-resistive state at the same predetermined value of the said voltage drop as in the preferred embodiment .
Den regenerative terskelkretsen 2 har en utgangspol 6 tilkoblet til en basiselektrode i transistoren 1 via en andre og tredje transistor 7 og 8 hvilke er kaskadekoblet med hverandre og er av motsatte ledningstyper. I den hensikt å sikre at terskelkretsen 2 fullstendig kan bryte basisstrømmen til transistoren 1 er en diode 9 innlagt i emitterkretsen hos transistoren 7 og to motstander 10 og 11 parallellkoblet med basis-emitterstrekningen hos transistoren 8 respektive hos transistoren 1. Den sistnevnte transistoren er dessuten beskytttet mot eventuelle transienter ved at dens kollektor-emitterstrekning og kollektor-basis-strekning er forsynt med en parallellkoblet diode 12 respektive en parallellkoblet zener-diode 13. The regenerative threshold circuit 2 has an output pole 6 connected to a base electrode in the transistor 1 via a second and third transistors 7 and 8 which are cascaded with each other and are of opposite wire types. In order to ensure that the threshold circuit 2 can completely break the base current of the transistor 1, a diode 9 is inserted in the emitter circuit of the transistor 7 and two resistors 10 and 11 connected in parallel with the base-emitter path of the transistor 8 and of the transistor 1 respectively. The latter transistor is also protected against any transients in that its collector-emitter section and collector-base section are provided with a parallel-connected diode 12 and a parallel-connected zener diode 13, respectively.
Foruten nevnte motstander 3 og 4 innbefatter den regenerative terskelkretsen 2, to transistorer 14 og 15 hvilke ifølge eksempelet er av motsatte ledningstyper og anordnet til å danne en såkalt hobk-vippe, en motstand 16 parallellkoblet med basis-emitterstrekningen av transistoren 15 og en motstand 17 koblet i serie med kollektor-emitterstrekningene av transistorene 14 In addition to said resistors 3 and 4, the regenerative threshold circuit 2 includes two transistors 14 and 15 which, according to the example, are of opposite lead types and arranged to form a so-called flip-flop, a resistor 16 connected in parallel with the base-emitter line of the transistor 15 and a resistor 17 connected in series with the collector-emitter sections of the transistors 14
og 15. Hensiktsmessige komponentverdier for en realisering av eksempelet i tegningen er 50. kiloohm og en negativ temperaturkoeffisient (NTC) av størrelse 5700 ppm/°C for motstanden 3, and 15. Appropriate component values for a realization of the example in the drawing are 50 kiloohms and a negative temperature coefficient (NTC) of magnitude 5700 ppm/°C for resistor 3,
150 kiloohm for motstanden 4, 0,6 ohm for motstanden 5, 500 ohm for motstanden 10,. 50 ohm for motstanden 11, 5 kiloohm for motstanden 16 og 2,2 kiloohm for motstanden 17. 150 kiloohms for resistor 4, 0.6 ohms for resistor 5, 500 ohms for resistor 10,. 50 ohms for resistor 11, 5 kilohms for resistor 16 and 2.2 kilohms for resistor 17.
Den regenerative terskelkretsen 2, de to kaskadekoblete transistorene 7 og 8, dioden 9 og motstanden 10 er i den foretrukne^ utførelsesformen av oppfinnelsen integrert i en monolistisk krets 18 hvor den ene av de kaskadekoblete transistorene er gitt en vanlig vertikal struktur, mens den andre hensiktsmessige er gitt en lateral struktur for å innbespare kostnader i fremstillingen slik som det beskrives i det svenske patentet nr. 337 851. The regenerative threshold circuit 2, the two cascaded transistors 7 and 8, the diode 9 and the resistor 10 are in the preferred embodiment of the invention integrated into a monolithic circuit 18 where one of the cascaded transistors is given a normal vertical structure, while the other suitable is given a lateral structure in order to save costs in the manufacture as described in the Swedish patent no. 337 851.
Claims (2)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE7612698A SE396853B (en) | 1976-11-12 | 1976-11-12 | TVAPOL INCLUDING A TRANSISTOR |
Publications (3)
Publication Number | Publication Date |
---|---|
NO773872L NO773872L (en) | 1978-05-16 |
NO145901B true NO145901B (en) | 1982-03-08 |
NO145901C NO145901C (en) | 1982-06-16 |
Family
ID=20329441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NO773872A NO145901C (en) | 1976-11-12 | 1977-11-11 | TOPOL INCLUDING A TRANSISTOR |
Country Status (10)
Country | Link |
---|---|
US (1) | US4194134A (en) |
BE (1) | BE860594A (en) |
CA (1) | CA1094175A (en) |
DE (1) | DE2749804A1 (en) |
FI (1) | FI59514C (en) |
FR (1) | FR2371081A1 (en) |
GB (1) | GB1541350A (en) |
IT (1) | IT1088224B (en) |
NO (1) | NO145901C (en) |
SE (1) | SE396853B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE409789B (en) * | 1978-01-10 | 1979-09-03 | Ericsson Telefon Ab L M | OVERCURRENT PROTECTED TRANSISTOR |
JPS601980B2 (en) * | 1979-05-23 | 1985-01-18 | 富士通株式会社 | automatic reset circuit |
US4329600A (en) * | 1979-10-15 | 1982-05-11 | Rca Corporation | Overload protection circuit for output driver |
DE3417211A1 (en) * | 1984-05-10 | 1985-11-14 | Robert Bosch Gmbh, 7000 Stuttgart | TEMPERATURE SENSOR |
DE3443770A1 (en) * | 1984-11-30 | 1986-06-05 | Robert Bosch Gmbh, 7000 Stuttgart | MONOLITHICALLY INTEGRATED, POLE PROTECTED CIRCUIT |
JPH04150223A (en) * | 1990-10-10 | 1992-05-22 | Nippondenso Co Ltd | Output circuit including integrated circuit |
GB2308467B (en) * | 1995-12-19 | 1999-12-29 | Contec Ltd | Low cost power supply regulator |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3551699A (en) * | 1967-07-10 | 1970-12-29 | Honeywell Inc | Control apparatus |
DE1763067A1 (en) * | 1968-03-30 | 1971-08-26 | Westinghouse Cooper Hewitt | Electronically controlled power rectifier with automatic shutdown in the event of overload |
US3585514A (en) * | 1968-08-01 | 1971-06-15 | Collins Radio Co | Power responsive overload sensing circuit |
DE1910298C2 (en) * | 1969-02-28 | 1971-01-21 | Radio Rim Gmbh | Electronic security |
US3609413A (en) * | 1969-11-03 | 1971-09-28 | Fairchild Camera Instr Co | Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering |
SE337851B (en) * | 1970-10-27 | 1971-08-23 | Ericsson Telefon Ab L M | |
US3651379A (en) * | 1970-10-30 | 1972-03-21 | Motorola Inc | Temperature responsive circuit for protecting an electron device |
US3845405A (en) * | 1973-05-24 | 1974-10-29 | Rca Corp | Composite transistor device with over current protection |
US3876914A (en) * | 1973-08-01 | 1975-04-08 | Gen Electric | Static overcurrent or overvoltage protection circuit |
JPS5650448B2 (en) * | 1974-03-08 | 1981-11-28 |
-
1976
- 1976-11-12 SE SE7612698A patent/SE396853B/en not_active IP Right Cessation
-
1977
- 1977-11-03 US US05/848,314 patent/US4194134A/en not_active Expired - Lifetime
- 1977-11-03 GB GB45849/77A patent/GB1541350A/en not_active Expired
- 1977-11-04 FI FI773303A patent/FI59514C/en not_active IP Right Cessation
- 1977-11-07 DE DE19772749804 patent/DE2749804A1/en active Granted
- 1977-11-08 BE BE182435A patent/BE860594A/en not_active IP Right Cessation
- 1977-11-10 FR FR7733941A patent/FR2371081A1/en active Granted
- 1977-11-10 CA CA290,677A patent/CA1094175A/en not_active Expired
- 1977-11-11 IT IT7729577A patent/IT1088224B/en active
- 1977-11-11 NO NO773872A patent/NO145901C/en unknown
Also Published As
Publication number | Publication date |
---|---|
CA1094175A (en) | 1981-01-20 |
NO773872L (en) | 1978-05-16 |
GB1541350A (en) | 1979-02-28 |
NO145901C (en) | 1982-06-16 |
IT1088224B (en) | 1985-06-10 |
FI59514C (en) | 1981-08-10 |
SE396853B (en) | 1977-10-03 |
FI59514B (en) | 1981-04-30 |
DE2749804A1 (en) | 1978-05-18 |
US4194134A (en) | 1980-03-18 |
FR2371081A1 (en) | 1978-06-09 |
FI773303A (en) | 1978-05-13 |
DE2749804C2 (en) | 1989-10-19 |
BE860594A (en) | 1978-03-01 |
FR2371081B1 (en) | 1982-07-09 |
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