NL8202890A - Variabele capacitieve inrichting. - Google Patents
Variabele capacitieve inrichting. Download PDFInfo
- Publication number
- NL8202890A NL8202890A NL8202890A NL8202890A NL8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A
- Authority
- NL
- Netherlands
- Prior art keywords
- conductivity type
- layer
- region
- semiconductor layer
- capacitive
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims 1
- 238000010276 construction Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 2
- 229940126214 compound 3 Drugs 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11168881 | 1981-07-17 | ||
JP11168681 | 1981-07-17 | ||
JP11168881A JPS5814580A (ja) | 1981-07-17 | 1981-07-17 | 可変容量装置 |
JP11168681A JPS5825278A (ja) | 1981-07-17 | 1981-07-17 | 可変容量装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8202890A true NL8202890A (nl) | 1983-02-16 |
Family
ID=26451024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8202890A NL8202890A (nl) | 1981-07-17 | 1982-07-16 | Variabele capacitieve inrichting. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4529995A (fr) |
DE (1) | DE3226673A1 (fr) |
FR (1) | FR2509907B1 (fr) |
GB (1) | GB2104725B (fr) |
NL (1) | NL8202890A (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
DE3421457A1 (de) * | 1984-06-08 | 1985-12-12 | Josef Dipl.-Phys. Dr. 8048 Haimhausen Kemmer | Halbleiterelement |
US4835587A (en) * | 1984-09-19 | 1989-05-30 | Fuji Electric Co., Ltd. | Semiconductor device for detecting radiation |
US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
US5184201A (en) * | 1989-06-07 | 1993-02-02 | Kabushiki Kaisha Toyoda Jidoshokki Seisakusho | Static induction transistor |
JP2824329B2 (ja) * | 1990-10-16 | 1998-11-11 | 東光株式会社 | 可変容量ダイオード装置 |
US5339039A (en) * | 1992-09-29 | 1994-08-16 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Langmuir probe system for radio frequency excited plasma processing system |
US5914513A (en) * | 1997-06-23 | 1999-06-22 | The Board Of Trustees Of The University Of Illinois | Electronically tunable capacitor |
SE515783C2 (sv) * | 1997-09-11 | 2001-10-08 | Ericsson Telefon Ab L M | Elektriska anordningar jämte förfarande för deras tillverkning |
JP4153233B2 (ja) * | 2002-04-18 | 2008-09-24 | 富士通株式会社 | pnバラクタ |
US6762481B2 (en) | 2002-10-08 | 2004-07-13 | The University Of Houston System | Electrically programmable nonvolatile variable capacitor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1311966A (en) * | 1919-08-05 | Milk-bottle container | ||
US1177736A (en) * | 1915-02-09 | 1916-04-04 | Louis Thomas | Cigarette-paper pack. |
US2964648A (en) * | 1958-12-24 | 1960-12-13 | Bell Telephone Labor Inc | Semiconductor capacitor |
NL243218A (fr) * | 1958-12-24 | |||
DE1464669B1 (de) * | 1961-03-06 | 1971-02-04 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet |
DE1514431C3 (de) * | 1965-04-07 | 1974-08-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität |
DE1514070C3 (de) * | 1965-12-03 | 1975-06-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Umschaltbare Kapazitätsdiode |
DE1803883A1 (de) * | 1968-10-18 | 1970-05-27 | Siemens Ag | Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung |
FR2132590A1 (en) * | 1971-04-09 | 1972-11-24 | Thomson Csf | Hyperabrupt varicap diode prodn - using simple semiconductor techniques |
AU535235B2 (en) * | 1979-03-12 | 1984-03-08 | Clarion Co. Ltd. | Semiconductor device |
JPS57103367A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Variable-capacitance device |
JPS57103366A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Variable-capacitance device |
-
1982
- 1982-07-09 GB GB08219890A patent/GB2104725B/en not_active Expired
- 1982-07-12 US US06/397,283 patent/US4529995A/en not_active Expired - Fee Related
- 1982-07-16 DE DE19823226673 patent/DE3226673A1/de not_active Ceased
- 1982-07-16 FR FR8212483A patent/FR2509907B1/fr not_active Expired
- 1982-07-16 NL NL8202890A patent/NL8202890A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE3226673A1 (de) | 1983-02-17 |
GB2104725A (en) | 1983-03-09 |
FR2509907B1 (fr) | 1988-07-29 |
GB2104725B (en) | 1986-04-09 |
US4529995A (en) | 1985-07-16 |
FR2509907A1 (fr) | 1983-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
BV | The patent application has lapsed |