NL8202890A - Variabele capacitieve inrichting. - Google Patents

Variabele capacitieve inrichting. Download PDF

Info

Publication number
NL8202890A
NL8202890A NL8202890A NL8202890A NL8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A NL 8202890 A NL8202890 A NL 8202890A
Authority
NL
Netherlands
Prior art keywords
conductivity type
layer
region
semiconductor layer
capacitive
Prior art date
Application number
NL8202890A
Other languages
English (en)
Dutch (nl)
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11168881A external-priority patent/JPS5814580A/ja
Priority claimed from JP11168681A external-priority patent/JPS5825278A/ja
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Publication of NL8202890A publication Critical patent/NL8202890A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
NL8202890A 1981-07-17 1982-07-16 Variabele capacitieve inrichting. NL8202890A (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP11168881 1981-07-17
JP11168681 1981-07-17
JP11168881A JPS5814580A (ja) 1981-07-17 1981-07-17 可変容量装置
JP11168681A JPS5825278A (ja) 1981-07-17 1981-07-17 可変容量装置

Publications (1)

Publication Number Publication Date
NL8202890A true NL8202890A (nl) 1983-02-16

Family

ID=26451024

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8202890A NL8202890A (nl) 1981-07-17 1982-07-16 Variabele capacitieve inrichting.

Country Status (5)

Country Link
US (1) US4529995A (fr)
DE (1) DE3226673A1 (fr)
FR (1) FR2509907B1 (fr)
GB (1) GB2104725B (fr)
NL (1) NL8202890A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
DE3421457A1 (de) * 1984-06-08 1985-12-12 Josef Dipl.-Phys. Dr. 8048 Haimhausen Kemmer Halbleiterelement
US4835587A (en) * 1984-09-19 1989-05-30 Fuji Electric Co., Ltd. Semiconductor device for detecting radiation
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
US5184201A (en) * 1989-06-07 1993-02-02 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Static induction transistor
JP2824329B2 (ja) * 1990-10-16 1998-11-11 東光株式会社 可変容量ダイオード装置
US5339039A (en) * 1992-09-29 1994-08-16 Arizona Board Of Regents On Behalf Of The University Of Arizona Langmuir probe system for radio frequency excited plasma processing system
US5914513A (en) * 1997-06-23 1999-06-22 The Board Of Trustees Of The University Of Illinois Electronically tunable capacitor
SE515783C2 (sv) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Elektriska anordningar jämte förfarande för deras tillverkning
JP4153233B2 (ja) * 2002-04-18 2008-09-24 富士通株式会社 pnバラクタ
US6762481B2 (en) 2002-10-08 2004-07-13 The University Of Houston System Electrically programmable nonvolatile variable capacitor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1311966A (en) * 1919-08-05 Milk-bottle container
US1177736A (en) * 1915-02-09 1916-04-04 Louis Thomas Cigarette-paper pack.
US2964648A (en) * 1958-12-24 1960-12-13 Bell Telephone Labor Inc Semiconductor capacitor
NL243218A (fr) * 1958-12-24
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
DE1514431C3 (de) * 1965-04-07 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität
DE1514070C3 (de) * 1965-12-03 1975-06-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Umschaltbare Kapazitätsdiode
DE1803883A1 (de) * 1968-10-18 1970-05-27 Siemens Ag Durch mindestens zwei abstimmbare Kapazitaetsdioden gesteuerte elektrische Anordnung
FR2132590A1 (en) * 1971-04-09 1972-11-24 Thomson Csf Hyperabrupt varicap diode prodn - using simple semiconductor techniques
AU535235B2 (en) * 1979-03-12 1984-03-08 Clarion Co. Ltd. Semiconductor device
JPS57103367A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
JPS57103366A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device

Also Published As

Publication number Publication date
DE3226673A1 (de) 1983-02-17
GB2104725A (en) 1983-03-09
FR2509907B1 (fr) 1988-07-29
GB2104725B (en) 1986-04-09
US4529995A (en) 1985-07-16
FR2509907A1 (fr) 1983-01-21

Similar Documents

Publication Publication Date Title
US7088114B2 (en) Sensing element arrangement for a fingerprint sensor
NL8202890A (nl) Variabele capacitieve inrichting.
US4456917A (en) Variable capacitor
US5477070A (en) Drive transistor for CCD-type image sensor
US4660064A (en) Charge coupled device having a floating diffusion region and a precharge diffusion region which are aligned so as to increase the output gain
US4688067A (en) Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
NL8005673A (nl) Veldeffecttransistor en werkwijze ter vervaardiging van een dergelijke veldeffecttransistor.
US4972252A (en) Photosensor with a capacitor connected in parallel so as to increase the dynamic range and to improve the holding characteristics of the photosensor
US20010000414A1 (en) MIS variable capacitor and temperature-compensated oscillator using the same
US6239662B1 (en) Mis variable capacitor and temperature-compensated oscillator using the same
US4614960A (en) Focal plane array
GB2092825A (en) Variable capacitor
US4529994A (en) Variable capacitor with single depletion layer
US20020105038A1 (en) Mos-transistor for a photo cell
JPH055179B2 (fr)
JPS5825275A (ja) 可変容量装置
US4333022A (en) Semiconductor device for digitizing an electric analog signal
US5426318A (en) Horizontal charge coupled device having a multiple reset gate
US4250568A (en) Capacitor semiconductor storage circuit
JPS59104180A (ja) 可変容量ダイオ−ド
US5336910A (en) Charge coupled device of high sensitivity and high integration
US5204989A (en) Charge sensing device
JPS586181A (ja) 可変容量装置
JPH0774309A (ja) 半導体集積回路装置
GB2092372A (en) Variable capacitor

Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed