NL7709046A - MEMORY CELLS FOR MATRIX MEMORIES. - Google Patents
MEMORY CELLS FOR MATRIX MEMORIES.Info
- Publication number
- NL7709046A NL7709046A NL7709046A NL7709046A NL7709046A NL 7709046 A NL7709046 A NL 7709046A NL 7709046 A NL7709046 A NL 7709046A NL 7709046 A NL7709046 A NL 7709046A NL 7709046 A NL7709046 A NL 7709046A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory cells
- matrix memories
- memories
- matrix
- cells
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71445776A | 1976-08-16 | 1976-08-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7709046A true NL7709046A (en) | 1978-02-20 |
Family
ID=24870121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7709046A NL7709046A (en) | 1976-08-16 | 1977-08-16 | MEMORY CELLS FOR MATRIX MEMORIES. |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS6057158B2 (en) |
DE (1) | DE2736715C2 (en) |
GB (1) | GB1547940A (en) |
NL (1) | NL7709046A (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1329220A (en) * | 1969-08-11 | 1973-09-05 | California Inst Of Techn | Stored charge device |
JPS5760781B2 (en) * | 1971-07-03 | 1982-12-21 | Shunpei Yamazaki | |
BE789501A (en) * | 1971-09-30 | 1973-03-29 | Siemens Ag | ELECTRIC CAPACITOR IN AN INTEGRATED CIRCUIT, USED IN PARTICULAR AS MEMORY FOR A SEMICONDUCTOR MEMORY |
US3771148A (en) * | 1972-03-31 | 1973-11-06 | Ncr | Nonvolatile capacitive memory cell |
US3761901A (en) * | 1972-06-28 | 1973-09-25 | Ncr | Nonvolatile memory cell |
US3774177A (en) * | 1972-10-16 | 1973-11-20 | Ncr Co | Nonvolatile random access memory cell using an alterable threshold field effect write transistor |
-
1977
- 1977-08-16 DE DE2736715A patent/DE2736715C2/en not_active Expired
- 1977-08-16 JP JP52097556A patent/JPS6057158B2/en not_active Expired
- 1977-08-16 NL NL7709046A patent/NL7709046A/en not_active Application Discontinuation
- 1977-08-16 GB GB34327/77A patent/GB1547940A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6057158B2 (en) | 1985-12-13 |
JPS5323530A (en) | 1978-03-04 |
DE2736715C2 (en) | 1985-03-14 |
DE2736715A1 (en) | 1978-02-23 |
GB1547940A (en) | 1979-07-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BV | The patent application has lapsed |