NL7707198A - METHOD AND STRUCTURE FOR THE ARRANGEMENT OF A PLASMA ETCHING PROCESS. - Google Patents

METHOD AND STRUCTURE FOR THE ARRANGEMENT OF A PLASMA ETCHING PROCESS.

Info

Publication number
NL7707198A
NL7707198A NL7707198A NL7707198A NL7707198A NL 7707198 A NL7707198 A NL 7707198A NL 7707198 A NL7707198 A NL 7707198A NL 7707198 A NL7707198 A NL 7707198A NL 7707198 A NL7707198 A NL 7707198A
Authority
NL
Netherlands
Prior art keywords
arrangement
etching process
plasma etching
plasma
etching
Prior art date
Application number
NL7707198A
Other languages
Dutch (nl)
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of NL7707198A publication Critical patent/NL7707198A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0012—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry
    • H05H1/0025—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature using electromagnetic or particle radiation, e.g. interferometry by using photoelectric means

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
NL7707198A 1976-09-13 1977-06-29 METHOD AND STRUCTURE FOR THE ARRANGEMENT OF A PLASMA ETCHING PROCESS. NL7707198A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA261,108A CA1071579A (en) 1976-09-13 1976-09-13 End point control in plasma etching

Publications (1)

Publication Number Publication Date
NL7707198A true NL7707198A (en) 1978-03-15

Family

ID=4106853

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7707198A NL7707198A (en) 1976-09-13 1977-06-29 METHOD AND STRUCTURE FOR THE ARRANGEMENT OF A PLASMA ETCHING PROCESS.

Country Status (7)

Country Link
JP (1) JPS6013072B2 (en)
CA (1) CA1071579A (en)
DE (1) DE2736262A1 (en)
FR (1) FR2364593A1 (en)
GB (1) GB1569939A (en)
NL (1) NL7707198A (en)
SE (1) SE439266B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142143A (en) * 1978-04-27 1979-11-06 Anelva Corp Dry type etching device
FR2487574A1 (en) * 1980-07-24 1982-01-29 Efcis METHOD AND DEVICE FOR ATTACKING PLASMA OF A THIN LAYER
US4415402A (en) * 1981-04-02 1983-11-15 The Perkin-Elmer Corporation End-point detection in plasma etching or phosphosilicate glass
JPS5839781A (en) * 1981-09-02 1983-03-08 Toshiba Corp Reactive ion etching device
JPS58100740A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Plasma distribution monitor
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
DE4016211A1 (en) * 1990-05-19 1991-11-21 Convac Gmbh METHOD FOR MONITORING AND CONTROLLING A CORE PROCESS AND DEVICE THEREFOR
AU4790499A (en) * 1998-07-11 2000-02-01 Surface Technology Systems Limited Improved process monitor
DE19860152C1 (en) * 1998-12-24 2000-06-15 Temic Semiconductor Gmbh Layer sequence structuring on silicon wafers by plasma etching involves monitoring photolacquer degradation by activated hydrogen spectral line intensity determination
DE102014107385A1 (en) * 2014-05-26 2015-11-26 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip and method for its production
GB201611652D0 (en) * 2016-07-04 2016-08-17 Spts Technologies Ltd Method of detecting a condition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US366492A (en) * 1887-07-12 Ash-sifter
JPS529353B2 (en) * 1972-04-18 1977-03-15
JPS5135639A (en) * 1974-09-20 1976-03-26 Hitachi Ltd HIMAKUNOPURAZUMA ETSUCHINGUSHORISHUTENKENSHUTSUHO
JPS5421711B2 (en) * 1975-01-20 1979-08-01
JPS5326674A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Plasma etching

Also Published As

Publication number Publication date
FR2364593A1 (en) 1978-04-07
GB1569939A (en) 1980-06-25
JPS6013072B2 (en) 1985-04-04
SE439266B (en) 1985-06-10
CA1071579A (en) 1980-02-12
JPS5334641A (en) 1978-03-31
SE7710257L (en) 1978-03-14
DE2736262A1 (en) 1978-03-16

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Legal Events

Date Code Title Description
BV The patent application has lapsed