NL7703815A - Diodelaser. - Google Patents

Diodelaser.

Info

Publication number
NL7703815A
NL7703815A NL7703815A NL7703815A NL7703815A NL 7703815 A NL7703815 A NL 7703815A NL 7703815 A NL7703815 A NL 7703815A NL 7703815 A NL7703815 A NL 7703815A NL 7703815 A NL7703815 A NL 7703815A
Authority
NL
Netherlands
Prior art keywords
diodelaser
Prior art date
Application number
NL7703815A
Other languages
English (en)
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of NL7703815A publication Critical patent/NL7703815A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
NL7703815A 1976-04-08 1977-04-06 Diodelaser. NL7703815A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/674,692 US4063189A (en) 1976-04-08 1976-04-08 Leaky wave diode laser

Publications (1)

Publication Number Publication Date
NL7703815A true NL7703815A (nl) 1977-10-11

Family

ID=24707564

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7703815A NL7703815A (nl) 1976-04-08 1977-04-06 Diodelaser.

Country Status (7)

Country Link
US (1) US4063189A (nl)
JP (1) JPS5931997B2 (nl)
CA (1) CA1071744A (nl)
DE (1) DE2711293A1 (nl)
FR (1) FR2347802A1 (nl)
GB (1) GB1549461A (nl)
NL (1) NL7703815A (nl)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
JPS57130490A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor laser device
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
JPS57198680A (en) * 1981-05-30 1982-12-06 Fujitsu Ltd Optical semiconductor device
FR2525034A1 (fr) * 1982-04-09 1983-10-14 Carenco Alain Laser a semiconducteur a coupleur directif permettant une sortie laterale
CA1267716A (en) * 1984-02-23 1990-04-10 Frederick W. Scholl Edge-emitting light emitting diode
JPS61131996U (nl) * 1985-02-06 1986-08-18
JPS61144077U (nl) * 1985-02-26 1986-09-05
JPS6328678U (nl) * 1986-03-12 1988-02-25
JPS62159317U (nl) * 1986-03-26 1987-10-09
US4751707A (en) * 1986-07-03 1988-06-14 Mcdonnell Douglas Corporation Laser diode array exhibiting transverse lasing
JPS63199480A (ja) * 1987-02-16 1988-08-17 Sharp Corp 半導体レ−ザ走査装置
JPH01126963U (nl) * 1988-02-16 1989-08-30
US5101413A (en) * 1991-05-10 1992-03-31 Trw Inc. Large-aperture light sources using resonant leaky-wave coupling
US5349602A (en) * 1993-03-15 1994-09-20 Sdl, Inc. Broad-area MOPA device with leaky waveguide beam expander
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
RU2133534C1 (ru) * 1997-08-08 1999-07-20 Государственное предприятие Научно-исследовательский институт "Полюс" Инжекционный лазер
RU2134007C1 (ru) 1998-03-12 1999-07-27 Государственное предприятие Научно-исследовательский институт "Полюс" Полупроводниковый оптический усилитель
RU2142665C1 (ru) * 1998-08-10 1999-12-10 Швейкин Василий Иванович Инжекционный лазер
AU762566B2 (en) * 1998-08-10 2003-06-26 D-Led Corporation Injection laser
WO2003071643A1 (fr) * 2002-02-18 2003-08-28 Ot´Kratoe Aktsyonernoe Obshchestvo ¨Sistema-Venchur¨ Heterostructure, laser a injection, element amplificateur a semi-conducteur et amplificateur optique a semi-conducteur
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
JP2006518548A (ja) * 2003-02-19 2006-08-10 ピービーシー レーザーズ リミテッド 周波数変換のための装置および方法
RU2278455C1 (ru) 2004-11-17 2006-06-20 Василий Иванович Швейкин Гетероструктура, инжекционный лазер, полупроводниковый усилительный элемент и полупроводниковый оптический усилитель
RU2391756C2 (ru) * 2008-06-06 2010-06-10 Василий Иванович Швейкин Диодный лазер, интегральный диодный лазер и интегральный полупроводниковый оптический усилитель
RU2419934C2 (ru) * 2009-07-17 2011-05-27 Василий Иванович Швейкин Диодный источник многолучевого когерентного лазерного излучения (варианты)
CN105048283B (zh) * 2015-07-30 2018-06-26 中国科学院长春光学精密机械与物理研究所 高功率共面电极泄露波激光器
RU2627192C1 (ru) * 2016-09-07 2017-08-03 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Способ получения лазерного излучения с малой расходимостью и диодный лазер для его осуществления

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411117B2 (nl) * 1972-02-23 1979-05-11
GB1407351A (en) * 1973-02-06 1975-09-24 Standard Telephones Cables Ltd Injection lasers
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam

Also Published As

Publication number Publication date
US4063189A (en) 1977-12-13
FR2347802B1 (nl) 1983-05-13
JPS52123881A (en) 1977-10-18
GB1549461A (en) 1979-08-08
JPS5931997B2 (ja) 1984-08-06
FR2347802A1 (fr) 1977-11-04
CA1071744A (en) 1980-02-12
DE2711293A1 (de) 1977-10-27

Similar Documents

Publication Publication Date Title
NL173134C (nl) Sandwichtoaster.
NL188113C (nl) Snelsluitklep.
NL7608350A (nl) Drijfwerk.
IT7826226A0 (it) Casa-natante.
NL177464C (nl) Oorprop.
FI73545B (fi) Vaexelriktare.
NL7602092A (nl) Wandhydrant.
NL162451C (nl) Closetsok.
NL179467C (nl) Kurketrekker.
NL174450C (nl) Kurketrekker.
NL7609032A (nl) Herverdamper.
ES230876Y (es) Esqui-bob.
IT1084204B (it) Dsviluppatrice.
ES223988Y (es) Porta-archivadores.
ES222715Y (es) Zapato-patin.
DK138827B (da) Narresut.
ES220673Y (es) Llavero-monedero.
ES222191Y (es) Somier.
ES222807Y (es) Pernito.
ES224337Y (es) Panera termoelectrica.
ES230469Y (es) Guarda-cuerpos.
ES222581Y (es) Sillon-lavacabezas.
ES222569Y (es) Casquillo-dado.
ES218139Y (es) Almohadon-estuche.
ES221420Y (es) Caja-expositor.

Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
BV The patent application has lapsed