NL7701172A - Halfgeleidergeheugeninrichting. - Google Patents
Halfgeleidergeheugeninrichting.Info
- Publication number
- NL7701172A NL7701172A NL7701172A NL7701172A NL7701172A NL 7701172 A NL7701172 A NL 7701172A NL 7701172 A NL7701172 A NL 7701172A NL 7701172 A NL7701172 A NL 7701172A NL 7701172 A NL7701172 A NL 7701172A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7701172A NL7701172A (nl) | 1977-02-04 | 1977-02-04 | Halfgeleidergeheugeninrichting. |
US05/814,650 US4161741A (en) | 1977-02-04 | 1977-07-11 | Semiconductor memory device |
IT19890/78A IT1092499B (it) | 1977-02-04 | 1978-02-01 | Dispositivo di memoria a semiconduttore |
GB4035/78A GB1594562A (en) | 1977-02-04 | 1978-02-01 | Semiconductor devices |
SE7801169A SE7801169L (sv) | 1977-02-04 | 1978-02-01 | Halvledaranordning innefattande ett halvledarminneselement |
BR7800627A BR7800627A (pt) | 1977-02-04 | 1978-02-01 | Dispositivo semicondutor |
DD78203514A DD137161A5 (de) | 1977-02-04 | 1978-02-01 | Halbleiterspeicheranordnung |
AU32945/78A AU512104B2 (en) | 1977-02-04 | 1978-02-02 | Semiconductor memory device |
DE2804412A DE2804412C3 (de) | 1977-02-04 | 1978-02-02 | Halbleiterspeicheranordnung |
ES466564A ES466564A1 (es) | 1977-02-04 | 1978-02-02 | Un dispositivo semiconductor que tiene un elemento de memo- ria semiconductora |
BE184857A BE863591A (fr) | 1977-02-04 | 1978-02-02 | Dispositif semiconducteur de memoire |
JP53010642A JPS5846064B2 (ja) | 1977-02-04 | 1978-02-03 | 半導体装置 |
RO7893100A RO76120A (ro) | 1977-02-04 | 1978-02-04 | Dispozitiv semiconductor de memorie |
FR7803218A FR2379877B1 (fr) | 1977-02-04 | 1978-02-06 | Dispositif semi-conducteur de memoire |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7701172A NL7701172A (nl) | 1977-02-04 | 1977-02-04 | Halfgeleidergeheugeninrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7701172A true NL7701172A (nl) | 1978-08-08 |
Family
ID=19827917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7701172A NL7701172A (nl) | 1977-02-04 | 1977-02-04 | Halfgeleidergeheugeninrichting. |
Country Status (14)
Country | Link |
---|---|
US (1) | US4161741A (it) |
JP (1) | JPS5846064B2 (it) |
AU (1) | AU512104B2 (it) |
BE (1) | BE863591A (it) |
BR (1) | BR7800627A (it) |
DD (1) | DD137161A5 (it) |
DE (1) | DE2804412C3 (it) |
ES (1) | ES466564A1 (it) |
FR (1) | FR2379877B1 (it) |
GB (1) | GB1594562A (it) |
IT (1) | IT1092499B (it) |
NL (1) | NL7701172A (it) |
RO (1) | RO76120A (it) |
SE (1) | SE7801169L (it) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL191683C (nl) * | 1977-02-21 | 1996-02-05 | Zaidan Hojin Handotai Kenkyu | Halfgeleidergeheugenschakeling. |
JPH0160951B2 (it) * | 1978-01-03 | 1989-12-26 | Advanced Micro Devices Inc | |
JPS6037620B2 (ja) * | 1979-12-11 | 1985-08-27 | 株式会社東芝 | 半導体記憶装置 |
US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
CA1164562A (en) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Semiconductor memory device |
US4593453A (en) * | 1982-06-01 | 1986-06-10 | Rockwell International Corporation | Two-level transistor structures and method utilizing minimal area therefor |
US4609429A (en) * | 1984-07-02 | 1986-09-02 | International Business Machines Corporation | Process for making a small dynamic memory cell structure |
US4753897A (en) * | 1986-03-14 | 1988-06-28 | Motorola Inc. | Method for providing contact separation in silicided devices using false gate |
US4908688A (en) * | 1986-03-14 | 1990-03-13 | Motorola, Inc. | Means and method for providing contact separation in silicided devices |
GB9115699D0 (en) * | 1991-07-19 | 1991-09-04 | Philips Electronic Associated | An overvoltage protected semiconductor switch |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
US4063274A (en) * | 1976-12-10 | 1977-12-13 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
-
1977
- 1977-02-04 NL NL7701172A patent/NL7701172A/xx not_active Application Discontinuation
- 1977-07-11 US US05/814,650 patent/US4161741A/en not_active Expired - Lifetime
-
1978
- 1978-02-01 GB GB4035/78A patent/GB1594562A/en not_active Expired
- 1978-02-01 BR BR7800627A patent/BR7800627A/pt unknown
- 1978-02-01 DD DD78203514A patent/DD137161A5/xx unknown
- 1978-02-01 IT IT19890/78A patent/IT1092499B/it active
- 1978-02-01 SE SE7801169A patent/SE7801169L/xx unknown
- 1978-02-02 BE BE184857A patent/BE863591A/xx unknown
- 1978-02-02 DE DE2804412A patent/DE2804412C3/de not_active Expired
- 1978-02-02 AU AU32945/78A patent/AU512104B2/en not_active Expired
- 1978-02-02 ES ES466564A patent/ES466564A1/es not_active Expired
- 1978-02-03 JP JP53010642A patent/JPS5846064B2/ja not_active Expired
- 1978-02-04 RO RO7893100A patent/RO76120A/ro unknown
- 1978-02-06 FR FR7803218A patent/FR2379877B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE7801169L (sv) | 1978-08-05 |
FR2379877B1 (fr) | 1986-02-14 |
DE2804412B2 (de) | 1981-06-19 |
DD137161A5 (de) | 1979-08-15 |
ES466564A1 (es) | 1979-01-16 |
DE2804412A1 (de) | 1978-08-10 |
JPS5846064B2 (ja) | 1983-10-14 |
AU512104B2 (en) | 1980-09-25 |
BE863591A (fr) | 1978-08-02 |
AU3294578A (en) | 1979-08-09 |
IT1092499B (it) | 1985-07-12 |
US4161741A (en) | 1979-07-17 |
GB1594562A (en) | 1981-07-30 |
FR2379877A1 (fr) | 1978-09-01 |
DE2804412C3 (de) | 1982-03-18 |
IT7819890A0 (it) | 1978-02-01 |
RO76120A (ro) | 1983-06-01 |
BR7800627A (pt) | 1978-10-10 |
RO76120B (ro) | 1983-05-30 |
JPS5397384A (en) | 1978-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |