NL7406422A - - Google Patents
Info
- Publication number
- NL7406422A NL7406422A NL7406422A NL7406422A NL7406422A NL 7406422 A NL7406422 A NL 7406422A NL 7406422 A NL7406422 A NL 7406422A NL 7406422 A NL7406422 A NL 7406422A NL 7406422 A NL7406422 A NL 7406422A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/125—Polycrystalline passivation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5343273A JPS5314420B2 (it) | 1973-05-14 | 1973-05-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7406422A true NL7406422A (it) | 1974-11-18 |
Family
ID=12942669
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7406422A NL7406422A (it) | 1973-05-14 | 1974-05-13 |
Country Status (8)
Country | Link |
---|---|
US (1) | US3977019A (it) |
JP (1) | JPS5314420B2 (it) |
CA (1) | CA1001773A (it) |
DE (1) | DE2422912A1 (it) |
FR (1) | FR2230079B1 (it) |
GB (1) | GB1450293A (it) |
IT (1) | IT1012351B (it) |
NL (1) | NL7406422A (it) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
JPS5534582B2 (it) * | 1974-06-24 | 1980-09-08 | ||
JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
JPS51126761A (en) * | 1975-04-25 | 1976-11-05 | Sony Corp | Schottky barrier type semi-conductor unit |
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
JPS51128269A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
US4160989A (en) * | 1975-12-29 | 1979-07-10 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
US4148055A (en) * | 1975-12-29 | 1979-04-03 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
JPS5383250U (it) * | 1976-12-09 | 1978-07-10 | ||
JPS596514B2 (ja) * | 1977-03-08 | 1984-02-13 | 日本電信電話株式会社 | Pn接合分離法による低漏話モノリシツクpnpnスイツチマトリクス |
US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
DE2841943C2 (de) * | 1978-09-27 | 1983-12-15 | Metzeler Schaum Gmbh, 8940 Memmingen | Vorrichtung zum kontinuierlichen Herstellen von Polyurethan-Schaumstoffblöcken mit ebener Oberfläche |
US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
JPS5976466A (ja) * | 1982-10-25 | 1984-05-01 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
JPS6168187A (ja) * | 1984-09-11 | 1986-04-08 | キヤノン株式会社 | 洗浄装置 |
JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Mosfetのゲ−ト絶縁膜形成方法 |
US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
US4829689A (en) * | 1986-06-25 | 1989-05-16 | Merchandising Workshop, Inc. | Article for display of information |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3725150A (en) * | 1971-10-29 | 1973-04-03 | Motorola Inc | Process for making a fine geometry, self-aligned device structure |
-
1973
- 1973-05-14 JP JP5343273A patent/JPS5314420B2/ja not_active Expired
-
1974
- 1974-05-08 GB GB2023574A patent/GB1450293A/en not_active Expired
- 1974-05-11 DE DE2422912A patent/DE2422912A1/de not_active Withdrawn
- 1974-05-13 CA CA199,627A patent/CA1001773A/en not_active Expired
- 1974-05-13 NL NL7406422A patent/NL7406422A/xx not_active Application Discontinuation
- 1974-05-14 US US05/469,841 patent/US3977019A/en not_active Expired - Lifetime
- 1974-05-14 IT IT22697/74A patent/IT1012351B/it active
- 1974-05-14 FR FR7416656A patent/FR2230079B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT1012351B (it) | 1977-03-10 |
JPS503587A (it) | 1975-01-14 |
FR2230079B1 (it) | 1977-10-28 |
DE2422912A1 (de) | 1974-12-05 |
FR2230079A1 (it) | 1974-12-13 |
JPS5314420B2 (it) | 1978-05-17 |
CA1001773A (en) | 1976-12-14 |
GB1450293A (en) | 1976-09-22 |
US3977019A (en) | 1976-08-24 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |