NL7405832A - - Google Patents

Info

Publication number
NL7405832A
NL7405832A NL7405832A NL7405832A NL7405832A NL 7405832 A NL7405832 A NL 7405832A NL 7405832 A NL7405832 A NL 7405832A NL 7405832 A NL7405832 A NL 7405832A NL 7405832 A NL7405832 A NL 7405832A
Authority
NL
Netherlands
Application number
NL7405832A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7405832A publication Critical patent/NL7405832A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Static Random-Access Memory (AREA)
  • Amplifiers (AREA)
  • Control Of Electrical Variables (AREA)
NL7405832A 1973-05-03 1974-05-01 NL7405832A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00356958A US3831041A (en) 1973-05-03 1973-05-03 Compensating circuit for semiconductive apparatus

Publications (1)

Publication Number Publication Date
NL7405832A true NL7405832A (xx) 1974-11-05

Family

ID=23403682

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7405832A NL7405832A (xx) 1973-05-03 1974-05-01

Country Status (8)

Country Link
US (1) US3831041A (xx)
JP (1) JPS5017147A (xx)
CA (1) CA1017014A (xx)
DE (1) DE2421196A1 (xx)
FR (1) FR2228250B1 (xx)
GB (1) GB1468921A (xx)
IT (1) IT1014093B (xx)
NL (1) NL7405832A (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899694A (en) * 1974-02-08 1975-08-12 Bell Telephone Labor Inc Compensating reference voltage circuit for semiconductor apparatus
US3937985A (en) * 1974-06-05 1976-02-10 Bell Telephone Laboratories, Incorporated Apparatus and method for regenerating charge
GB1533231A (en) * 1974-11-07 1978-11-22 Hitachi Ltd Electronic circuits incorporating an electronic compensating circuit
DE2541662A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsverschiebeanordnungen
US4847518A (en) * 1987-11-13 1989-07-11 Harris Semiconductor Patents, Inc. CMOS voltage divider circuits
NL8800851A (nl) * 1988-04-05 1989-11-01 Philips Nv Halfgeleidergeheugeninrichting.
JPH0718792B2 (ja) * 1988-05-27 1995-03-06 日立電線株式会社 光式塩分粒子付着量検出センサ
TWI603069B (zh) * 2016-09-05 2017-10-21 浚洸光學科技股份有限公司 液體濃度的檢測裝置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3521087A (en) * 1969-05-16 1970-07-21 Spacelabs Inc Current limiting circuit
DE2111979A1 (de) * 1970-03-13 1971-10-21 Hitachi Ltd Feldeffekt-Halbleitereinrichtung
NL7014137A (xx) * 1970-09-25 1972-03-28
US3700934A (en) * 1971-09-23 1972-10-24 Ionics Temperature-compensated current reference

Also Published As

Publication number Publication date
FR2228250A1 (xx) 1974-11-29
US3831041A (en) 1974-08-20
FR2228250B1 (xx) 1976-12-17
GB1468921A (en) 1977-03-30
IT1014093B (it) 1977-04-20
DE2421196A1 (de) 1974-11-14
JPS5017147A (xx) 1975-02-22
CA1017014A (en) 1977-09-06

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Legal Events

Date Code Title Description
BV The patent application has lapsed