NL7316277A - - Google Patents
Info
- Publication number
- NL7316277A NL7316277A NL7316277A NL7316277A NL7316277A NL 7316277 A NL7316277 A NL 7316277A NL 7316277 A NL7316277 A NL 7316277A NL 7316277 A NL7316277 A NL 7316277A NL 7316277 A NL7316277 A NL 7316277A
- Authority
- NL
- Netherlands
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/287—Organisation of a multiplicity of shift registers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/188—Organisation of a multiplicity of shift registers, e.g. regeneration, timing or input-output circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US32034873A | 1973-01-02 | 1973-01-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7316277A true NL7316277A (en) | 1974-07-04 |
Family
ID=23245997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7316277A NL7316277A (en) | 1973-01-02 | 1973-11-28 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS4999442A (en) |
DD (1) | DD110575A5 (en) |
DE (1) | DE2362242A1 (en) |
FR (1) | FR2212703B1 (en) |
NL (1) | NL7316277A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008354A1 (en) * | 1978-08-17 | 1980-03-05 | Siemens Aktiengesellschaft | Charge transfer memory with a series-parallel-series organisation and a strict periodical clock control |
EP0009598A1 (en) * | 1978-09-28 | 1980-04-16 | Siemens Aktiengesellschaft | Charge transfer memory of the serial-parallel-serial type |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1550463A (en) * | 1975-06-30 | 1979-08-15 | Honeywell Inf Systems | Multiphase series-parallel-series charge-coupled device registers |
DE2543023C3 (en) * | 1975-09-26 | 1981-07-09 | Siemens AG, 1000 Berlin und 8000 München | Storage arrangement with modules from charge displacement storage |
US4051353A (en) * | 1976-06-30 | 1977-09-27 | International Business Machines Corporation | Accordion shift register and its application in the implementation of level sensitive logic system |
DE3683041D1 (en) * | 1986-05-02 | 1992-01-30 | Itt Ind Gmbh Deutsche | SERIAL FIFO STORAGE. |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3656011A (en) * | 1971-02-02 | 1972-04-11 | Rca Corp | Charge coupled device |
-
1973
- 1973-11-23 DD DD17486373A patent/DD110575A5/xx unknown
- 1973-11-28 NL NL7316277A patent/NL7316277A/xx unknown
- 1973-11-29 JP JP13398973A patent/JPS4999442A/ja active Pending
- 1973-12-14 DE DE19732362242 patent/DE2362242A1/en active Pending
- 1973-12-18 FR FR7345300A patent/FR2212703B1/fr not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0008354A1 (en) * | 1978-08-17 | 1980-03-05 | Siemens Aktiengesellschaft | Charge transfer memory with a series-parallel-series organisation and a strict periodical clock control |
EP0009598A1 (en) * | 1978-09-28 | 1980-04-16 | Siemens Aktiengesellschaft | Charge transfer memory of the serial-parallel-serial type |
Also Published As
Publication number | Publication date |
---|---|
FR2212703B1 (en) | 1976-10-08 |
FR2212703A1 (en) | 1974-07-26 |
DE2362242A1 (en) | 1974-07-11 |
DD110575A5 (en) | 1974-12-20 |
JPS4999442A (en) | 1974-09-19 |