NL7003431A - - Google Patents

Info

Publication number
NL7003431A
NL7003431A NL7003431A NL7003431A NL7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A
Authority
NL
Netherlands
Application number
NL7003431A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7003431A priority Critical patent/NL7003431A/xx
Priority to DE2110289A priority patent/DE2110289C3/en
Priority to US00120983A priority patent/US3750620A/en
Priority to CA107073A priority patent/CA923635A/en
Priority to AT195971A priority patent/AT321994B/en
Priority to CH336071A priority patent/CH532960A/en
Priority to SE02926/71A priority patent/SE368724B/xx
Priority to JP1223771A priority patent/JPS5317862B1/ja
Priority to BE764013A priority patent/BE764013A/en
Priority to FR7108288A priority patent/FR2084428A5/fr
Priority to GB2337671*A priority patent/GB1346938A/en
Publication of NL7003431A publication Critical patent/NL7003431A/xx
Priority to US00360670A priority patent/US3816166A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
NL7003431A 1970-03-11 1970-03-11 NL7003431A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11
DE2110289A DE2110289C3 (en) 1970-03-11 1971-03-04 Method for depositing semiconductor material and apparatus for carrying it out
US00120983A US3750620A (en) 1970-03-11 1971-03-04 Vapor deposition reactor
CH336071A CH532960A (en) 1970-03-11 1971-03-08 Reactor for carrying out a process in which a gas stream and at least one substrate are used, and method for operating this reactor
AT195971A AT321994B (en) 1970-03-11 1971-03-08 REACTOR AND METHOD FOR MANUFACTURING A SEMICONDUCTOR ARRANGEMENT IN THIS REACTOR
CA107073A CA923635A (en) 1970-03-11 1971-03-08 Reactor and method of manufacturing a semiconductor device with the aid of said reactor
SE02926/71A SE368724B (en) 1970-03-11 1971-03-08
JP1223771A JPS5317862B1 (en) 1970-03-11 1971-03-09
BE764013A BE764013A (en) 1970-03-11 1971-03-09 REACTOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THIS REACTOR
FR7108288A FR2084428A5 (en) 1970-03-11 1971-03-10
GB2337671*A GB1346938A (en) 1970-03-11 1971-04-19 Reactors and method of manufacture of semiconductor devices using such a reactor
US00360670A US3816166A (en) 1970-03-11 1973-05-16 Vapor depositing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
NL7003431A true NL7003431A (en) 1971-09-14

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11

Country Status (11)

Country Link
US (1) US3750620A (en)
JP (1) JPS5317862B1 (en)
AT (1) AT321994B (en)
BE (1) BE764013A (en)
CA (1) CA923635A (en)
CH (1) CH532960A (en)
DE (1) DE2110289C3 (en)
FR (1) FR2084428A5 (en)
GB (1) GB1346938A (en)
NL (1) NL7003431A (en)
SE (1) SE368724B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (en) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 Reaction tube for semiconductor heat treatment
JPS5944771B2 (en) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 Semiconductor heat treatment furnace
JPS5923464B2 (en) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 Semiconductor heat treatment equipment
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (en) * 1987-03-27 1993-02-19 Chimie Metal PROCESS AND PLANT FOR CHEMICAL DEPOSITION OF MODERATE TEMPERATURE ULTRADOR COATINGS
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (en) * 1987-06-30 1989-01-12 Aixtron Gmbh QUARTZ GLASS REACTOR FOR MOCVD SYSTEMS
DE3884810T2 (en) * 1988-06-22 1994-05-05 Advanced Semiconductor Mat GAS INJECTION DEVICE FOR REACTORS FOR CHEMICAL VAPOR DEPOSITION.
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
JP3068075B2 (en) * 1998-01-17 2000-07-24 ハンベック コーポレイション Horizontal reactor for compound semiconductor production
SE9801190D0 (en) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapor Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
WO2003104525A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (en) * 2007-11-21 2010-05-26 住友電気工業株式会社 Metalorganic vapor phase epitaxy system
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (en) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 Deposition equipment
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Also Published As

Publication number Publication date
CH532960A (en) 1973-01-31
AT321994B (en) 1975-04-25
DE2110289B2 (en) 1980-03-13
BE764013A (en) 1971-09-09
SE368724B (en) 1974-07-15
DE2110289A1 (en) 1971-09-23
DE2110289C3 (en) 1980-10-30
GB1346938A (en) 1974-02-13
US3750620A (en) 1973-08-07
FR2084428A5 (en) 1971-12-17
JPS5317862B1 (en) 1978-06-12
CA923635A (en) 1973-03-27

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