NL277811A - - Google Patents
Info
- Publication number
- NL277811A NL277811A NL277811DA NL277811A NL 277811 A NL277811 A NL 277811A NL 277811D A NL277811D A NL 277811DA NL 277811 A NL277811 A NL 277811A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
- H03B7/02—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance
- H03B7/06—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device
- H03B7/08—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising lumped inductance and capacitance active element being semiconductor device being a tunnel diode
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB15263/61A GB1005917A (en) | 1961-04-27 | 1961-04-27 | Semiconductor devices |
US202420A US3221218A (en) | 1961-04-27 | 1962-06-14 | High frequency semiconductor devices and connections therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
NL277811A true NL277811A (fr) | 1900-01-01 |
Family
ID=26251165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL277811D NL277811A (fr) | 1961-04-27 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3221218A (fr) |
DE (1) | DE1295088B (fr) |
GB (1) | GB1005917A (fr) |
NL (1) | NL277811A (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1134928A (en) * | 1966-11-22 | 1968-11-27 | Standard Telephones Cables Ltd | Varactor diode |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE970420C (de) * | 1951-03-10 | 1958-09-18 | Siemens Ag | Elektrisches Halbleitergeraet |
US2854365A (en) * | 1956-03-16 | 1958-09-30 | Tung Sol Electric Inc | Potential graded semi-conductor and method of making the same |
US2894183A (en) * | 1956-05-01 | 1959-07-07 | Sprague Electric Co | Transistor sub-assembly |
US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
US3008089A (en) * | 1958-02-20 | 1961-11-07 | Bell Telephone Labor Inc | Semiconductive device comprising p-i-n conductivity layers |
NL237230A (fr) * | 1958-03-19 | |||
NL252532A (fr) * | 1959-06-30 | 1900-01-01 | ||
NL257516A (fr) * | 1959-11-25 |
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0
- NL NL277811D patent/NL277811A/xx unknown
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1961
- 1961-04-27 GB GB15263/61A patent/GB1005917A/en not_active Expired
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1962
- 1962-04-27 DE DEN21519A patent/DE1295088B/de active Pending
- 1962-06-14 US US202420A patent/US3221218A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1295088B (de) | 1969-05-14 |
US3221218A (en) | 1965-11-30 |
GB1005917A (en) | 1965-09-29 |