NL269092A - - Google Patents
Info
- Publication number
- NL269092A NL269092A NL269092DA NL269092A NL 269092 A NL269092 A NL 269092A NL 269092D A NL269092D A NL 269092DA NL 269092 A NL269092 A NL 269092A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01015—Phosphorus [P]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01032—Germanium [Ge]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01049—Indium [In]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01057—Lanthanum [La]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01075—Rhenium [Re]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Die Bonding (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55036A US3184823A (en) | 1960-09-09 | 1960-09-09 | Method of making silicon transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
NL269092A true NL269092A (de) | 1900-01-01 |
Family
ID=21995147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL269092D NL269092A (de) | 1960-09-09 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3184823A (de) |
BE (1) | BE608008A (de) |
DE (1) | DE1439570A1 (de) |
GB (1) | GB988367A (de) |
MY (1) | MY6900281A (de) |
NL (1) | NL269092A (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3450581A (en) * | 1963-04-04 | 1969-06-17 | Texas Instruments Inc | Process of coating a semiconductor with a mask and diffusing an impurity therein |
GB1053406A (de) * | 1963-05-18 | |||
NL135876C (de) * | 1963-06-11 | |||
US3304594A (en) * | 1963-08-15 | 1967-02-21 | Motorola Inc | Method of making integrated circuit by controlled process |
US3264149A (en) * | 1963-12-19 | 1966-08-02 | Bell Telephone Labor Inc | Method of making semiconductor devices |
US3283218A (en) * | 1964-04-03 | 1966-11-01 | Philco Corp | High frequency diode having semiconductive mesa |
US3387189A (en) * | 1964-04-20 | 1968-06-04 | North American Rockwell | High frequency diode with small spreading resistance |
US3490963A (en) * | 1964-05-18 | 1970-01-20 | Sprague Electric Co | Production of planar semiconductor devices by masking and diffusion |
US3408237A (en) * | 1964-06-30 | 1968-10-29 | Ibm | Ductile case-hardened steels |
US3319139A (en) * | 1964-08-18 | 1967-05-09 | Hughes Aircraft Co | Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion |
US3388009A (en) * | 1965-06-23 | 1968-06-11 | Ion Physics Corp | Method of forming a p-n junction by an ionic beam |
US3372071A (en) * | 1965-06-30 | 1968-03-05 | Texas Instruments Inc | Method of forming a small area junction semiconductor |
US3514346A (en) * | 1965-08-02 | 1970-05-26 | Gen Electric | Semiconductive devices having asymmetrically conductive junction |
US3447238A (en) * | 1965-08-09 | 1969-06-03 | Raytheon Co | Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide |
US3347720A (en) * | 1965-10-21 | 1967-10-17 | Bendix Corp | Method of forming a semiconductor by masking and diffusion |
DE1286641B (de) * | 1966-08-26 | 1969-01-09 | Bosch Gmbh Robert | Verfahren zur Kontaktierung einer Halbleiteranordnung |
NL169122C (nl) * | 1970-02-26 | 1982-06-01 | Toyo Electronics Ind Corp | Halfgeleiderelement, omvattende een halfgeleiderplaatje met een door een isolerende laag bedekt hoofdvlak en met elektroden die zich ononderbroken uitstrekken over delen van de isolerende laag en aangrenzende delen van zijvlakken van het halfgeleiderplaatje, alsmede werkwijze voor het bevestigen van het halfgeleiderelement op een van aansluitklemmen voorziene montageplaat. |
NL7013227A (de) * | 1970-09-08 | 1972-03-10 | Philips Nv | |
US3815223A (en) * | 1971-02-08 | 1974-06-11 | Signetics Corp | Method for making semiconductor structure with dielectric and air isolation |
US4358784A (en) * | 1979-11-30 | 1982-11-09 | International Rectifier Corporation | Clad molybdenum disks for alloyed diode |
US8810775B2 (en) * | 2010-04-16 | 2014-08-19 | Media Lario S.R.L. | EUV mirror module with a nickel electroformed curved mirror |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE525387A (de) * | 1952-12-29 | 1900-01-01 | ||
US2897421A (en) * | 1954-08-11 | 1959-07-28 | Westinghouse Electric Corp | Phototransistor design |
US2804405A (en) * | 1954-12-24 | 1957-08-27 | Bell Telephone Labor Inc | Manufacture of silicon devices |
US2763822A (en) * | 1955-05-10 | 1956-09-18 | Westinghouse Electric Corp | Silicon semiconductor devices |
US2801375A (en) * | 1955-08-01 | 1957-07-30 | Westinghouse Electric Corp | Silicon semiconductor devices and processes for making them |
US2842841A (en) * | 1955-06-13 | 1958-07-15 | Philco Corp | Method of soldering leads to semiconductor devices |
US2963390A (en) * | 1955-09-26 | 1960-12-06 | Hoffman Electronics Corp | Method of making a photosensitive semi-conductor device |
NL251064A (de) * | 1955-11-04 | |||
US2863105A (en) * | 1955-11-10 | 1958-12-02 | Hoffman Electronics Corp | Rectifying device |
US2945296A (en) * | 1956-02-13 | 1960-07-19 | Marley Co | Method of affixing fins to tubing |
US2879188A (en) * | 1956-03-05 | 1959-03-24 | Westinghouse Electric Corp | Processes for making transistors |
US2870049A (en) * | 1956-07-16 | 1959-01-20 | Rca Corp | Semiconductor devices and method of making same |
BE563088A (de) * | 1957-02-25 | |||
NL233303A (de) * | 1957-11-30 | |||
US2960417A (en) * | 1958-07-23 | 1960-11-15 | West Point Mfg Co | Multiple photocells and method of making same |
NL155412C (de) * | 1959-04-15 | |||
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
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0
- NL NL269092D patent/NL269092A/xx unknown
-
1960
- 1960-09-09 US US55036A patent/US3184823A/en not_active Expired - Lifetime
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1961
- 1961-09-08 DE DE19611439570 patent/DE1439570A1/de active Pending
- 1961-09-08 BE BE608008A patent/BE608008A/fr unknown
- 1961-09-08 GB GB32336/61A patent/GB988367A/en not_active Expired
-
1969
- 1969-12-31 MY MY1969281A patent/MY6900281A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1764462A1 (de) | 1971-09-23 |
MY6900281A (en) | 1969-12-31 |
GB988367A (en) | 1965-04-07 |
BE608008A (fr) | 1962-03-08 |
DE1439570A1 (de) | 1969-04-24 |
DE1764462B2 (de) | 1976-03-25 |
US3184823A (en) | 1965-05-25 |