NL233004A - - Google Patents
Info
- Publication number
- NL233004A NL233004A NL233004DA NL233004A NL 233004 A NL233004 A NL 233004A NL 233004D A NL233004D A NL 233004DA NL 233004 A NL233004 A NL 233004A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/14—Single-crystal growth from melt solutions using molten solvents by electrolysis
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1906—Control of temperature characterised by the use of electric means using an analogue comparing device
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/27—Control of temperature characterised by the use of electric means with sensing element responsive to radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electrochemistry (AREA)
- Automation & Control Theory (AREA)
- Ceramic Engineering (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- General Induction Heating (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES67478A DE1134459B (de) | 1954-05-18 | 1954-05-18 | Halbleiterbauelement mit einem Halbleiterkoerper aus Silizium |
DES39209A DE1102117B (de) | 1954-05-18 | 1954-05-18 | Verfahren zum Herstellen von reinstem Silicium |
DES42803A DE1223815B (de) | 1954-05-18 | 1955-02-24 | Verfahren zur Herstellung von reinstem Silicium |
DES0042824 | 1955-02-25 | ||
DES49371A DE1193022B (de) | 1954-05-18 | 1956-07-06 | Verfahren zur Herstellung von reinstem Silicium |
DES50407A DE1185449B (de) | 1954-05-18 | 1956-09-18 | Einrichtung zum Herstellen von reinsten Halbleiterstoffen |
DES55831A DE1211610B (de) | 1954-05-18 | 1957-11-11 | Verfahren zur Herstellung von reinstem Silicium |
DES56317A DE1208298B (de) | 1954-05-18 | 1957-12-19 | Verfahren zum Herstellen von Silicium fuer Halbleiteranordnungen |
DE1958S0058219 DE1217348C2 (de) | 1954-05-18 | 1958-05-14 | Verfahren zur Herstellung von reinstem Silicium |
DES61117A DE1209113B (de) | 1954-05-18 | 1958-12-23 | Verfahren zum Herstellen von hochreinem Silicium |
DES66308A DE1212949B (de) | 1954-05-18 | 1959-12-17 | Verfahren zum Herstellen von hochreinem Silicium |
DES69895A DE1235266B (de) | 1954-05-18 | 1961-05-18 | Verfahren zum Herstellen reinster kristalliner Stoffe, insbesondere fuer Halbleiterzwecke |
Publications (1)
Publication Number | Publication Date |
---|---|
NL233004A true NL233004A (fr) | 1900-01-01 |
Family
ID=27582950
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL113118D NL113118C (fr) | 1954-05-18 | ||
NL246576D NL246576A (fr) | 1954-05-18 | ||
NL258754D NL258754A (fr) | 1954-05-18 | ||
NL218408D NL218408A (fr) | 1954-05-18 | ||
NL233004D NL233004A (fr) | 1954-05-18 | ||
NL130620D NL130620C (fr) | 1954-05-18 | ||
NL122356D NL122356C (fr) | 1954-05-18 |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL113118D NL113118C (fr) | 1954-05-18 | ||
NL246576D NL246576A (fr) | 1954-05-18 | ||
NL258754D NL258754A (fr) | 1954-05-18 | ||
NL218408D NL218408A (fr) | 1954-05-18 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL130620D NL130620C (fr) | 1954-05-18 | ||
NL122356D NL122356C (fr) | 1954-05-18 |
Country Status (6)
Country | Link |
---|---|
US (5) | US2854318A (fr) |
CH (6) | CH509824A (fr) |
DE (11) | DE1102117B (fr) |
FR (2) | FR1125207A (fr) |
GB (6) | GB809250A (fr) |
NL (7) | NL122356C (fr) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL113118C (fr) * | 1954-05-18 | 1900-01-01 | ||
DE1017795B (de) * | 1954-05-25 | 1957-10-17 | Siemens Ag | Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen |
US3330251A (en) * | 1955-11-02 | 1967-07-11 | Siemens Ag | Apparatus for producing highest-purity silicon for electric semiconductor devices |
DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
US3021197A (en) * | 1956-11-20 | 1962-02-13 | Olin Mathieson | Preparation of diborane |
DE1207922B (de) * | 1957-04-30 | 1965-12-30 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von hochreinen Halbleitersubstanzen, insbesondere von Silizium |
US3169892A (en) * | 1959-04-08 | 1965-02-16 | Jerome H Lemelson | Method of making a multi-layer electrical circuit |
US2993763A (en) * | 1957-11-14 | 1961-07-25 | Plessey Co Ltd | Manufacturing process for the preparation of flakes of sintered silicon |
DE1081869B (de) * | 1957-12-03 | 1960-05-19 | Siemens Ag | Verfahren zur Herstellung von Silicium-Einkristallen |
DE1198321B (de) * | 1958-01-06 | 1965-08-12 | Int Standard Electric Corp | Verfahren zur Herstellung von Halbleitermaterial grosser Reinheit |
DE1098496B (de) * | 1958-04-11 | 1961-02-02 | Wacker Chemie Gmbh | Verfahren zur gleichzeitigen Herstellung von kristallinem oder amorphem Silicium und Siliciumverbindungen mit Si-Si-Bindungen |
NL236697A (fr) * | 1958-05-16 | |||
US3030189A (en) * | 1958-05-19 | 1962-04-17 | Siemens Ag | Methods of producing substances of highest purity, particularly electric semiconductors |
NL238464A (fr) * | 1958-05-29 | |||
DE1123653B (de) * | 1958-07-25 | 1962-02-15 | Gen Electric | Verfahren zum Herstellen von Siliciumtetrajodid |
US3020129A (en) * | 1958-07-25 | 1962-02-06 | Gen Electric | Production of silicon of improved purity |
US3017251A (en) * | 1958-08-19 | 1962-01-16 | Du Pont | Process for the production of silicon |
BE595351A (fr) * | 1958-09-20 | 1900-01-01 | ||
NL124906C (fr) * | 1958-12-09 | |||
NL246431A (fr) * | 1958-12-16 | 1900-01-01 | ||
DE1154796B (de) * | 1958-12-16 | 1963-09-26 | Western Electric Co | Verfahren zum Reinigen von Silicium- oder Germaniumverbindungen |
NL246971A (fr) * | 1959-01-02 | 1900-01-01 | ||
US3025192A (en) * | 1959-01-02 | 1962-03-13 | Norton Co | Silicon carbide crystals and processes and furnaces for making them |
NL251143A (fr) * | 1959-05-04 | |||
DE1140548B (de) * | 1959-06-25 | 1962-12-06 | Siemens Ag | Verfahren zum Herstellen von einkristallinen Halbleiterkoerpern |
NL256017A (fr) * | 1959-09-23 | 1900-01-01 | ||
NL256255A (fr) * | 1959-11-02 | |||
DE1128412B (de) * | 1959-12-17 | 1962-04-26 | Metallgesellschaft Ag | Verfahren zur Herstellung von Reinstsilicium durch thermische Zersetzung von gasfoermigen Siliciumverbindungen |
DE1147567B (de) * | 1960-01-15 | 1963-04-25 | Siemens Ag | Verfahren zum Gewinnen von insbesondere einkristallinem, halbleitendem Silicium |
NL262949A (fr) * | 1960-04-02 | 1900-01-01 | ||
US3098774A (en) * | 1960-05-02 | 1963-07-23 | Mark Albert | Process for producing single crystal silicon surface layers |
DE1123300B (de) * | 1960-06-03 | 1962-02-08 | Siemens Ag | Verfahren zur Herstellung von Silicium oder Germanium |
DE1155098B (de) * | 1960-06-10 | 1963-10-03 | Siemens Ag | Verfahren zur Gewinnung von reinstem Silicium |
US3161474A (en) * | 1960-06-21 | 1964-12-15 | Siemens Ag | Method for producing hyperpure semiconducting elements from their halogen compounds |
DE1129145B (de) * | 1960-07-07 | 1962-05-10 | Knapsack Ag | Verfahren zur Herstellung von hochreinem Silicium |
US3134694A (en) * | 1960-08-25 | 1964-05-26 | Siemens Ag | Apparatus for accurately controlling the production of semiconductor rods |
DE1216842B (de) * | 1960-09-30 | 1966-05-18 | Karl Ernst Hoffmann | Verfahren zur Herstellung von reinstem Silicium und Germanium |
DE1138746B (de) * | 1960-10-22 | 1962-10-31 | Int Standard Electric Corp | Verfahren zur Reinigung von Siliciumtetrachlorid |
DE1498891A1 (de) * | 1960-12-06 | 1969-02-06 | Siemens Ag | Verfahren zur Bestimmung der Konzentration von aktiven Verunreinigungen in einer zur Darstellung eines halbleitenden Elements geeigneten Verbindung |
DE1198787B (de) * | 1960-12-17 | 1965-08-19 | Siemens Ag | Verfahren zur Gewinnung von reinstem Silicium, Siliciumkarbid oder Germanium aus ihren gasfoermigen Verbindungen |
NL277330A (fr) * | 1961-04-22 | |||
US3188244A (en) * | 1961-04-24 | 1965-06-08 | Tektronix Inc | Method of forming pn junction in semiconductor material |
DE1193486B (de) * | 1961-06-19 | 1965-05-26 | Siemens Ag | Verfahren zum Herstellen von n-leitendem Silicium |
US3125533A (en) * | 1961-08-04 | 1964-03-17 | Liquid | |
DE1215110B (de) * | 1961-08-14 | 1966-04-28 | Siemens Ag | Vorrichtung zum Einspannen des Endes eines Stabes bei Apparaturen zum tiegellosen Zonenschmelzen |
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- NL NL113118D patent/NL113118C/xx active
- NL NL246576D patent/NL246576A/xx unknown
- NL NL258754D patent/NL258754A/xx unknown
- NL NL218408D patent/NL218408A/xx unknown
- NL NL233004D patent/NL233004A/xx unknown
- NL NL130620D patent/NL130620C/xx active
- NL NL122356D patent/NL122356C/xx active
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1954
- 1954-05-18 DE DES39209A patent/DE1102117B/de active Pending
- 1954-05-18 DE DES67478A patent/DE1134459B/de active Pending
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1955
- 1955-02-24 DE DES42803A patent/DE1223815B/de active Pending
- 1955-05-17 GB GB14233/55A patent/GB809250A/en not_active Expired
- 1955-05-17 CH CH473362A patent/CH509824A/de not_active IP Right Cessation
- 1955-05-17 CH CH358411D patent/CH358411A/de unknown
- 1955-05-18 FR FR1125207D patent/FR1125207A/fr not_active Expired
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1956
- 1956-07-06 DE DES49371A patent/DE1193022B/de active Pending
- 1956-09-18 DE DES50407A patent/DE1185449B/de active Pending
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1957
- 1957-06-26 US US668209A patent/US2854318A/en not_active Expired - Lifetime
- 1957-06-28 CH CH4780657A patent/CH378863A/de unknown
- 1957-07-05 GB GB21435/57A patent/GB833290A/en not_active Expired
- 1957-07-06 FR FR1182346D patent/FR1182346A/fr not_active Expired
- 1957-11-11 DE DES55831A patent/DE1211610B/de active Pending
- 1957-12-19 DE DES56317A patent/DE1208298B/de active Pending
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1958
- 1958-05-14 DE DE1958S0058219 patent/DE1217348C2/de not_active Expired
- 1958-11-05 CH CH6585358A patent/CH416582A/de unknown
- 1958-11-05 US US772063A patent/US3063811A/en not_active Expired - Lifetime
- 1958-11-11 GB GB36224/58A patent/GB898342A/en not_active Expired
- 1958-11-17 US US774413A patent/US2981605A/en not_active Expired - Lifetime
- 1958-12-18 GB GB40896/58A patent/GB849718A/en not_active Expired
- 1958-12-23 DE DES61117A patent/DE1209113B/de active Pending
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1959
- 1959-12-15 CH CH8185859A patent/CH424732A/de unknown
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1960
- 1960-11-29 CH CH1344660A patent/CH440228A/de unknown
- 1960-12-16 GB GB43351/60A patent/GB938699A/en not_active Expired
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1961
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- 1961-05-18 DE DES69895A patent/DE1235266B/de active Pending
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1962
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