NL2006937C2 - A pulsed terahertz emitter. - Google Patents
A pulsed terahertz emitter. Download PDFInfo
- Publication number
- NL2006937C2 NL2006937C2 NL2006937A NL2006937A NL2006937C2 NL 2006937 C2 NL2006937 C2 NL 2006937C2 NL 2006937 A NL2006937 A NL 2006937A NL 2006937 A NL2006937 A NL 2006937A NL 2006937 C2 NL2006937 C2 NL 2006937C2
- Authority
- NL
- Netherlands
- Prior art keywords
- metal
- thz
- pulsed terahertz
- terahertz transmitter
- layer
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000010949 copper Substances 0.000 claims description 20
- 230000003287 optical effect Effects 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 4
- 238000004611 spectroscopical analysis Methods 0.000 description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Claims (18)
1. Gepulste terahertz-zender, omvattende een oppervlak waarop een Cu20/metaal-interface-laag is voorzien.
2. Gepulste terahertz-zender volgens conclusie 1, waarbij het 5 oppervlak een deel van een golfgeleider vormt.
3. Gepulste terahertz-zender volgens conclusie 1, waarbij het oppervlak een deel van een optisch element vormt.
4. Gepulste terahertz-zender volgens conclusie 3, waarbij het optisch element gebogen is.
5. Gepulste terahertz-zender volgens één van de voorgaande conclusies, waarbij een dikte van de Cu20/metaal-interface-laag 10-1000 15 nanometer is.
6. Gepulste terahertz-zender volgens één van de voorgaande conclusies, waarbij de Cu20/metaal-interface-laag is voorzien op een sublaag van koper, goud, zilver, platina of ander geschikt metaal. 20
7. Gepulste terahertz-zender volgens één van de voorgaande conclusies, voorts omvattende een femtoseconden-laser voor het exciteren van de Cu20/metaal-interface-laag.
8. Gepulste terahertz-zender volgens conclusie 7, waarbij de laser werkzaam is bij een golflengte van 800 nm.
9. Gepulste terahertz-zender volgens één van de voorgaande 5 conclusies, waarbij de Cu20/metaal-interface-laag elektrisch voorgespannen is.
10. Gepulste terahertz-zender volgens conclusie 6, waarbij de sublaag van goud of zilver een gepercoleerd netwerk omvat.
11. Gepulste terahertz-zender volgens één van de voorgaande conclusies, waarbij het koperen oxide is gedoopt.
12. Werkwijze voor het fabriceren van een gepulste terahertz-15 zender, omvattende de stap van het oxideren van een laag Cu bij temperaturen in de range van 100-275 graden Celsius voor het verkrijgen van een Cu20/metaal-interface.
13. Werkwijze volgens conclusie 12, waarbij de Cu20/metaal-20 interface wordt voorzien op een laag van een verder metaal.
14. Werkwijze volgens conclusie 13, waarbij voor het verdere metaal koper, goud, zilver of platina wordt geselecteerd.
15. Werkwijze volgens één van de voorgaande conclusies 12-14, waarbij de Cu20/metaal-interface wordt voorzien op een werkoppervlak van een instrument.
16. Werkwijze volgens conclusie 15, waarbij voor het 30 werkoppervlak een oppervlak van een golfgeleider of een optisch element wordt geselecteerd.
17. Werkwijze volgens conclusie 16, waarbij het optisch element een spiegel is met een concaaf of convex werk oppervlak.
18. Spectroscopisch instrument, omvattende de gepulste terahertz- zender volgens één van de voorgaande conclusies 1-11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006937A NL2006937C2 (en) | 2011-06-15 | 2011-06-15 | A pulsed terahertz emitter. |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2006937 | 2011-06-15 | ||
| NL2006937A NL2006937C2 (en) | 2011-06-15 | 2011-06-15 | A pulsed terahertz emitter. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL2006937C2 true NL2006937C2 (en) | 2012-12-18 |
Family
ID=44543694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2006937A NL2006937C2 (en) | 2011-06-15 | 2011-06-15 | A pulsed terahertz emitter. |
Country Status (1)
| Country | Link |
|---|---|
| NL (1) | NL2006937C2 (nl) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000075641A1 (en) * | 1999-06-04 | 2000-12-14 | Teraview Limited | Three dimensional imaging |
| WO2004086560A2 (en) * | 2003-03-27 | 2004-10-07 | Cambridge University Technical Services Limited | Terahertz radiation sources and methods |
-
2011
- 2011-06-15 NL NL2006937A patent/NL2006937C2/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000075641A1 (en) * | 1999-06-04 | 2000-12-14 | Teraview Limited | Three dimensional imaging |
| WO2004086560A2 (en) * | 2003-03-27 | 2004-10-07 | Cambridge University Technical Services Limited | Terahertz radiation sources and methods |
Non-Patent Citations (2)
| Title |
|---|
| HUBER R ET AL: "Stimulated terahertz emission from intraexcitonic transitions in Cu2O", PHYSICAL REVIEW LETTERS, vol. 96, no. 1, 017402, 2005, APS USA, pages 1 - 5, XP002670736, ISSN: 0031-9007, DOI: 10.1103/PHYSREVLETT.96.017402 * |
| RESHMI CHAKKITTAKANDY: "Quasi-near field terahertz spectroscopy", 27 January 2010 (2010-01-27), pages 14,74, XP002670735, ISBN: 978-90-78314-13-4, Retrieved from the Internet <URL:http://repository.tudelft.nl/assets/uuid:8a400e6c-117e-495d-99fc-2acac2084139/Reshmi_Chakkittakandy_thesis.pdf> [retrieved on 20120302] * |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20150101 |