NL2000625A1 - Kap voor immersielithografie. - Google Patents

Kap voor immersielithografie.

Info

Publication number
NL2000625A1
NL2000625A1 NL2000625A NL2000625A NL2000625A1 NL 2000625 A1 NL2000625 A1 NL 2000625A1 NL 2000625 A NL2000625 A NL 2000625A NL 2000625 A NL2000625 A NL 2000625A NL 2000625 A1 NL2000625 A1 NL 2000625A1
Authority
NL
Netherlands
Prior art keywords
hood
immersion lithography
lithography
immersion
Prior art date
Application number
NL2000625A
Other languages
English (en)
Other versions
NL2000625C2 (nl
Inventor
Li-Jui Chen
Tzung-Chi Fu
Fu-Jye Liang
Lin-Hung Shiu
Chun-Kuang Chen
Tsai-Sheng Gau
Ching-Yu Chang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL2000625A1 publication Critical patent/NL2000625A1/nl
Application granted granted Critical
Publication of NL2000625C2 publication Critical patent/NL2000625C2/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL2000625A 2006-05-04 2007-05-03 Kap voor immersielithografie. NL2000625C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US79744306P 2006-05-04 2006-05-04
US79744306 2006-05-04
US42743406 2006-06-29
US11/427,434 US7675604B2 (en) 2006-05-04 2006-06-29 Hood for immersion lithography

Publications (2)

Publication Number Publication Date
NL2000625A1 true NL2000625A1 (nl) 2007-11-06
NL2000625C2 NL2000625C2 (nl) 2009-02-25

Family

ID=38660880

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2000625A NL2000625C2 (nl) 2006-05-04 2007-05-03 Kap voor immersielithografie.

Country Status (3)

Country Link
US (1) US7675604B2 (nl)
KR (1) KR100903823B1 (nl)
NL (1) NL2000625C2 (nl)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2131241B1 (en) * 2008-05-08 2019-07-31 ASML Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
EP2136250A1 (en) * 2008-06-18 2009-12-23 ASML Netherlands B.V. Lithographic apparatus and method
SG166747A1 (en) 2009-05-26 2010-12-29 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method
NL2004808A (en) 2009-06-30 2011-01-12 Asml Netherlands Bv Fluid handling structure, lithographic apparatus and device manufacturing method.
NL2009272A (en) * 2011-08-31 2013-03-04 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
EP2602663A1 (en) 2011-12-09 2013-06-12 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO System and method for overlay control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6686570B2 (en) * 2000-02-10 2004-02-03 Tokyo Electron Limited Hot plate unit
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR20050085236A (ko) * 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4492239B2 (ja) 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
EP1510867A1 (en) * 2003-08-29 2005-03-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006013130A (ja) * 2004-06-25 2006-01-12 Nikon Corp 露光装置、露光方法、及びデバイスの製造方法
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20060124906A (ko) * 2005-06-01 2006-12-06 매그나칩 반도체 유한회사 이머젼 리소그라피 장치
KR20070047132A (ko) * 2005-11-01 2007-05-04 주식회사 하이닉스반도체 이머젼 리소그래피의 기포 제거방법
US20070209433A1 (en) * 2006-03-10 2007-09-13 Honeywell International Inc. Thermal mass gas flow sensor and method of forming same

Also Published As

Publication number Publication date
NL2000625C2 (nl) 2009-02-25
US7675604B2 (en) 2010-03-09
KR20070108085A (ko) 2007-11-08
US20070258060A1 (en) 2007-11-08
KR100903823B1 (ko) 2009-06-25

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Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20081224

PD2B A search report has been drawn up