NL162251C - Bidirectionele schakelinrichting. - Google Patents
Bidirectionele schakelinrichting.Info
- Publication number
- NL162251C NL162251C NL6811845.A NL6811845A NL162251C NL 162251 C NL162251 C NL 162251C NL 6811845 A NL6811845 A NL 6811845A NL 162251 C NL162251 C NL 162251C
- Authority
- NL
- Netherlands
- Prior art keywords
- switching device
- bidirectional switching
- bidirectional
- switching
- Prior art date
Links
- 230000002457 bidirectional effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Rectifiers (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA845885T | |||
US66195467A | 1967-08-21 | 1967-08-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6811845A NL6811845A (xx) | 1969-02-25 |
NL162251C true NL162251C (nl) | 1980-04-15 |
Family
ID=74124947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6811845.A NL162251C (nl) | 1967-08-21 | 1968-08-20 | Bidirectionele schakelinrichting. |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS4743875B1 (xx) |
CA (1) | CA845885A (xx) |
DE (1) | DE1764791B2 (xx) |
FR (1) | FR1578448A (xx) |
GB (1) | GB1234294A (xx) |
MY (1) | MY7300382A (xx) |
NL (1) | NL162251C (xx) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
JPS5019437B1 (xx) * | 1970-06-08 | 1975-07-07 | ||
JPS4918279A (xx) * | 1972-06-08 | 1974-02-18 | ||
DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
JPS5541029B2 (xx) * | 1972-10-30 | 1980-10-21 | ||
JPS4974486A (xx) * | 1972-11-17 | 1974-07-18 | ||
JPS5314917B1 (xx) * | 1975-06-13 | 1978-05-20 | ||
JPS5297684A (en) * | 1976-02-12 | 1977-08-16 | Mitsubishi Electric Corp | Semiconductor element |
IT1072135B (it) * | 1976-12-07 | 1985-04-10 | Indesit | Dispositivo semiconduttore per la deflessione orizzontale |
JPS5427887Y2 (xx) * | 1978-03-29 | 1979-09-08 | ||
JPS5547066Y2 (xx) * | 1978-05-16 | 1980-11-05 | ||
CN109698234B (zh) * | 2017-10-23 | 2021-05-11 | 株洲中车时代半导体有限公司 | 晶闸管及其制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
-
0
- CA CA845885A patent/CA845885A/en not_active Expired
-
1968
- 1968-08-06 GB GB1234294D patent/GB1234294A/en not_active Expired
- 1968-08-07 DE DE19681764791 patent/DE1764791B2/de not_active Withdrawn
- 1968-08-20 FR FR1578448D patent/FR1578448A/fr not_active Expired
- 1968-08-20 NL NL6811845.A patent/NL162251C/xx not_active IP Right Cessation
- 1968-08-20 JP JP5947468A patent/JPS4743875B1/ja active Pending
-
1973
- 1973-12-30 MY MY382/73A patent/MY7300382A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1234294A (xx) | 1971-06-03 |
NL6811845A (xx) | 1969-02-25 |
FR1578448A (xx) | 1969-08-14 |
JPS4743875B1 (xx) | 1972-11-06 |
DE1764791A1 (de) | 1972-04-06 |
CA845885A (en) | 1970-06-30 |
MY7300382A (en) | 1973-12-31 |
DE1764791B2 (de) | 1973-05-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |