NL159536B - SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME. - Google Patents

SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME.

Info

Publication number
NL159536B
NL159536B NL7303449.A NL7303449A NL159536B NL 159536 B NL159536 B NL 159536B NL 7303449 A NL7303449 A NL 7303449A NL 159536 B NL159536 B NL 159536B
Authority
NL
Netherlands
Prior art keywords
manufacturing
same
semiconductor laser
laser
semiconductor
Prior art date
Application number
NL7303449.A
Other languages
Dutch (nl)
Other versions
NL7303449A (en
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7303449A publication Critical patent/NL7303449A/xx
Publication of NL159536B publication Critical patent/NL159536B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30612Etching of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
NL7303449.A 1972-03-13 1973-03-12 SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME. NL159536B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2564472A JPS5321275B2 (en) 1972-03-13 1972-03-13

Publications (2)

Publication Number Publication Date
NL7303449A NL7303449A (en) 1973-09-17
NL159536B true NL159536B (en) 1979-02-15

Family

ID=12171529

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7303449.A NL159536B (en) 1972-03-13 1973-03-12 SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME.

Country Status (4)

Country Link
JP (1) JPS5321275B2 (en)
DE (1) DE2312162C3 (en)
GB (1) GB1419695A (en)
NL (1) NL159536B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
NL176323C (en) * 1975-03-11 1985-03-18 Philips Nv SEMICONDUCTOR DEVICE FOR GENERATING INCOHERENT RADIATION.
JPS606118B2 (en) * 1975-03-12 1985-02-15 株式会社日立製作所 semiconductor laser equipment
JPS5215280A (en) * 1975-07-28 1977-02-04 Nippon Telegr & Teleph Corp <Ntt> Cleavage semiconductor laser equipped with side surface light take-out waveguide
JPS5245296A (en) * 1975-10-07 1977-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductive phototransmission pass and semiconductor emission devic e used it
NL7607299A (en) * 1976-07-02 1978-01-04 Philips Nv INJECTION LASER.
DE2760112C2 (en) * 1976-07-02 1989-05-18 N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl
JPS5842283A (en) * 1981-09-04 1983-03-11 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried type semiconductor laser
JPS62157339A (en) * 1986-11-28 1987-07-13 Hitachi Ltd Information reproducing device
US5250471A (en) * 1988-12-26 1993-10-05 The Furukawa Electric Co. Method for manufacturing compound semiconductor devices including a step where the semiconductor is etched without exposure to light
CA2089900C (en) * 1992-02-20 2001-10-16 Ichiro Yoshida Multi-beam semiconductor laser and method for producing the same
JP4189610B2 (en) * 1998-05-08 2008-12-03 ソニー株式会社 Photoelectric conversion element and manufacturing method thereof

Also Published As

Publication number Publication date
DE2312162C3 (en) 1978-03-09
DE2312162B2 (en) 1977-07-14
JPS4894378A (en) 1973-12-05
NL7303449A (en) 1973-09-17
GB1419695A (en) 1975-12-31
DE2312162A1 (en) 1973-10-04
JPS5321275B2 (en) 1978-07-01

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: HITACHI