NL153606B - Werkwijze voor het vervaardigen van microcircuits, alsmede microcircuits, vervaardigd door toepassing van deze werkwijze. - Google Patents
Werkwijze voor het vervaardigen van microcircuits, alsmede microcircuits, vervaardigd door toepassing van deze werkwijze.Info
- Publication number
- NL153606B NL153606B NL676712828A NL6712828A NL153606B NL 153606 B NL153606 B NL 153606B NL 676712828 A NL676712828 A NL 676712828A NL 6712828 A NL6712828 A NL 6712828A NL 153606 B NL153606 B NL 153606B
- Authority
- NL
- Netherlands
- Prior art keywords
- microcircuits
- procedure
- manufacture
- applying
- well
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58093366A | 1966-09-21 | 1966-09-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6712828A NL6712828A (nl) | 1968-03-22 |
NL153606B true NL153606B (nl) | 1977-06-15 |
Family
ID=24323189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL676712828A NL153606B (nl) | 1966-09-21 | 1967-09-20 | Werkwijze voor het vervaardigen van microcircuits, alsmede microcircuits, vervaardigd door toepassing van deze werkwijze. |
Country Status (6)
Country | Link |
---|---|
US (1) | US3477872A (nl) |
BE (1) | BE704154A (nl) |
DE (1) | DE1621330B2 (nl) |
GB (1) | GB1132294A (nl) |
NL (1) | NL153606B (nl) |
SE (1) | SE317857B (nl) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2012031A1 (de) * | 1970-03-13 | 1971-09-23 | Siemens Ag | Verfahren zum Herstellen von aus Chrom oder Molybdän bestehenden Kontaktmetallschichten in Halbleiterbauelementen |
US3785862A (en) * | 1970-12-14 | 1974-01-15 | Rca Corp | Method for depositing refractory metals |
DE2151127C3 (de) * | 1970-12-16 | 1981-04-16 | International Business Machines Corp., 10504 Armonk, N.Y. | Verfahren zum Abscheiden eines Metallisierungsmusters und seine Anwendung |
US3900363A (en) * | 1972-11-15 | 1975-08-19 | Nippon Columbia | Method of making crystal |
US4404235A (en) * | 1981-02-23 | 1983-09-13 | Rca Corporation | Method for improving adhesion of metal film on a dielectric surface |
US4387962A (en) * | 1981-10-06 | 1983-06-14 | The United States Of America As Represented By The Secretary Of The Air Force | Corrosion resistant laser mirror heat exchanger |
DE3141567C2 (de) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten |
US4517225A (en) * | 1983-05-02 | 1985-05-14 | Signetics Corporation | Method for manufacturing an electrical interconnection by selective tungsten deposition |
JPS60115245A (ja) * | 1983-11-28 | 1985-06-21 | Toshiba Corp | 半導体装置の製造方法 |
JPS6177324A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 金属薄膜の形成方法 |
US4595608A (en) * | 1984-11-09 | 1986-06-17 | Harris Corporation | Method for selective deposition of tungsten on silicon |
US5084414A (en) * | 1985-03-15 | 1992-01-28 | Hewlett-Packard Company | Metal interconnection system with a planar surface |
JPS61274345A (ja) * | 1985-05-29 | 1986-12-04 | Toshiba Corp | 半導体装置の製造方法 |
US4808552A (en) * | 1985-09-11 | 1989-02-28 | Texas Instruments Incorporated | Process for making vertically-oriented interconnections for VLSI devices |
US4650696A (en) * | 1985-10-01 | 1987-03-17 | Harris Corporation | Process using tungsten for multilevel metallization |
GB2181456B (en) * | 1985-10-07 | 1989-10-25 | Gen Electric | Depositing metal films on dielectric substrates |
US4709655A (en) * | 1985-12-03 | 1987-12-01 | Varian Associates, Inc. | Chemical vapor deposition apparatus |
US4796562A (en) * | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US4741928A (en) * | 1985-12-27 | 1988-05-03 | General Electric Company | Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces |
US4732801A (en) * | 1986-04-30 | 1988-03-22 | International Business Machines Corporation | Graded oxide/nitride via structure and method of fabrication therefor |
JP2733244B2 (ja) * | 1988-04-07 | 1998-03-30 | 株式会社日立製作所 | 配線形成方法 |
US5300322A (en) * | 1992-03-10 | 1994-04-05 | Martin Marietta Energy Systems, Inc. | Molybdenum enhanced low-temperature deposition of crystalline silicon nitride |
DE102008035235B4 (de) * | 2008-07-29 | 2014-05-22 | Ivoclar Vivadent Ag | Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3160798A (en) * | 1959-12-07 | 1964-12-08 | Gen Electric | Semiconductor devices including means for securing the elements |
US3147413A (en) * | 1960-10-27 | 1964-09-01 | Monsanto Co | Point contact rectifier of boron phosphide having boron-to-phosphorus atomic ratio of to 100 |
US3232803A (en) * | 1963-04-16 | 1966-02-01 | North American Aviation Inc | Chemical etching of tungsten |
US3333984A (en) * | 1963-08-30 | 1967-08-01 | Minnesota Mining & Mfg | Process for the formation of images on a substrate |
US3325258A (en) * | 1963-11-27 | 1967-06-13 | Texas Instruments Inc | Multilayer resistors for hybrid integrated circuits |
US3364087A (en) * | 1964-04-27 | 1968-01-16 | Varian Associates | Method of using laser to coat or etch substrate |
US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
US3375418A (en) * | 1964-09-15 | 1968-03-26 | Sprague Electric Co | S-m-s device with partial semiconducting layers |
US3399331A (en) * | 1964-12-24 | 1968-08-27 | Ibm | Electrical device and contacts |
-
1966
- 1966-09-21 US US580933A patent/US3477872A/en not_active Expired - Lifetime
-
1967
- 1967-09-06 GB GB40769/67A patent/GB1132294A/en not_active Expired
- 1967-09-20 DE DE19671621330 patent/DE1621330B2/de not_active Withdrawn
- 1967-09-20 SE SE12933/67A patent/SE317857B/xx unknown
- 1967-09-20 NL NL676712828A patent/NL153606B/nl unknown
- 1967-09-21 BE BE704154D patent/BE704154A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
SE317857B (nl) | 1969-11-24 |
DE1621330A1 (de) | 1971-05-13 |
NL6712828A (nl) | 1968-03-22 |
US3477872A (en) | 1969-11-11 |
DE1621330B2 (de) | 1972-02-17 |
BE704154A (nl) | 1968-02-01 |
GB1132294A (en) | 1968-10-30 |
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