NL147789B - PROCESS FOR DEPOSITING AN INSULATING LAYER BY SPRAYING MATERIAL FROM A DI-ELECTRICAL METHOD AND AN OBJECT FACING AN INSULATING LAYER OBTAINED IN ACCORDANCE WITH THIS PROCESS. - Google Patents

PROCESS FOR DEPOSITING AN INSULATING LAYER BY SPRAYING MATERIAL FROM A DI-ELECTRICAL METHOD AND AN OBJECT FACING AN INSULATING LAYER OBTAINED IN ACCORDANCE WITH THIS PROCESS.

Info

Publication number
NL147789B
NL147789B NL666601015A NL6601015A NL147789B NL 147789 B NL147789 B NL 147789B NL 666601015 A NL666601015 A NL 666601015A NL 6601015 A NL6601015 A NL 6601015A NL 147789 B NL147789 B NL 147789B
Authority
NL
Netherlands
Prior art keywords
insulating layer
depositing
accordance
spraying material
electrical method
Prior art date
Application number
NL666601015A
Other languages
Dutch (nl)
Other versions
NL6601015A (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL6601015A publication Critical patent/NL6601015A/xx
Publication of NL147789B publication Critical patent/NL147789B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL666601015A 1965-01-28 1966-01-26 PROCESS FOR DEPOSITING AN INSULATING LAYER BY SPRAYING MATERIAL FROM A DI-ELECTRICAL METHOD AND AN OBJECT FACING AN INSULATING LAYER OBTAINED IN ACCORDANCE WITH THIS PROCESS. NL147789B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US428733A US3369991A (en) 1965-01-28 1965-01-28 Apparatus for cathode sputtering including a shielded rf electrode
US69285567A 1967-12-22 1967-12-22

Publications (2)

Publication Number Publication Date
NL6601015A NL6601015A (en) 1966-07-29
NL147789B true NL147789B (en) 1975-11-17

Family

ID=27027888

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666601015A NL147789B (en) 1965-01-28 1966-01-26 PROCESS FOR DEPOSITING AN INSULATING LAYER BY SPRAYING MATERIAL FROM A DI-ELECTRICAL METHOD AND AN OBJECT FACING AN INSULATING LAYER OBTAINED IN ACCORDANCE WITH THIS PROCESS.

Country Status (8)

Country Link
US (2) US3369991A (en)
BE (1) BE674340A (en)
CH (1) CH478254A (en)
DE (1) DE1521321C2 (en)
FR (1) FR1469226A (en)
GB (1) GB1114644A (en)
NL (1) NL147789B (en)
SE (1) SE333088B (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
GB1443827A (en) * 1973-04-27 1976-07-28 Triplex Safety Glass Co Reactive sputtering apparatus and cathode units therefor
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
DE3206413A1 (en) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Process for producing layers composed of silicon or of silicides of refractory metals using a planar magnetron sputtering apparatus
EP0090067B2 (en) 1982-03-31 1991-03-20 Ibm Deutschland Gmbh Reactor for reactive ion etching, and etching process
EP0106623B1 (en) * 1982-10-05 1990-05-23 Fujitsu Limited Sputtering apparatus
CH668565A5 (en) * 1986-06-23 1989-01-13 Balzers Hochvakuum METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY.
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US10748740B2 (en) * 2018-08-21 2020-08-18 Fei Company X-ray and particle shield for improved vacuum conductivity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1926336A (en) * 1930-09-13 1933-09-12 Fansteel Prod Co Inc Electrode and method of making same
BE634012A (en) * 1961-10-03
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates
FR1379512A (en) * 1963-01-18 1964-11-20 Asea Ab Process for obtaining metallic or dielectric layers by cathodic erosion
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Also Published As

Publication number Publication date
CH478254A (en) 1969-09-15
SE333088B (en) 1971-03-01
NL6601015A (en) 1966-07-29
BE674340A (en) 1966-04-15
US3532615A (en) 1970-10-06
FR1469226A (en) 1967-02-10
US3369991A (en) 1968-02-20
DE1521321B1 (en) 1971-06-09
DE1521321C2 (en) 1974-11-21
GB1114644A (en) 1968-05-22

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: IBM