NL1025640A1 - Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker. - Google Patents

Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker.

Info

Publication number
NL1025640A1
NL1025640A1 NL1025640A NL1025640A NL1025640A1 NL 1025640 A1 NL1025640 A1 NL 1025640A1 NL 1025640 A NL1025640 A NL 1025640A NL 1025640 A NL1025640 A NL 1025640A NL 1025640 A1 NL1025640 A1 NL 1025640A1
Authority
NL
Netherlands
Prior art keywords
opening
resist
mask
light
absorbing layer
Prior art date
Application number
NL1025640A
Other languages
English (en)
Other versions
NL1025640C2 (nl
Inventor
Jenspeter Rau
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of NL1025640A1 publication Critical patent/NL1025640A1/nl
Application granted granted Critical
Publication of NL1025640C2 publication Critical patent/NL1025640C2/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1025640A 2003-03-04 2004-03-04 Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker. NL1025640C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10309266A DE10309266B3 (de) 2003-03-04 2003-03-04 Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10309266 2003-03-04

Publications (2)

Publication Number Publication Date
NL1025640A1 true NL1025640A1 (nl) 2004-09-07
NL1025640C2 NL1025640C2 (nl) 2009-06-09

Family

ID=33038724

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1025640A NL1025640C2 (nl) 2003-03-04 2004-03-04 Werkwijze voor het vormen van een opening in een lichtabsorberende laag op een masker.

Country Status (3)

Country Link
US (1) US7229723B2 (nl)
DE (1) DE10309266B3 (nl)
NL (1) NL1025640C2 (nl)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100522094B1 (ko) * 2003-03-12 2005-10-18 주식회사 테라반도체 반도체 장치의 패턴형성방법
US7582413B2 (en) * 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
TW200728929A (en) * 2006-01-27 2007-08-01 Nanya Technology Corp Exposure method of forming three dimensional lithographic pattern
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
US7947412B2 (en) 2007-03-29 2011-05-24 Micron Technology, Inc. Reduced lens heating methods, apparatus, and systems
US8268542B2 (en) * 2007-12-03 2012-09-18 International Business Machines Corporation Method for reducing side lobe printing using a barrier layer
US8609327B2 (en) * 2008-07-10 2013-12-17 International Business Machines Corporation Forming sub-lithographic patterns using double exposure
CN106842825B (zh) * 2017-03-21 2021-01-12 京东方科技集团股份有限公司 母模及其制造方法
US11764062B2 (en) * 2017-11-13 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure
US20230052800A1 (en) * 2021-08-16 2023-02-16 Tokyo Electron Limited Methods of Forming Patterns

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139918A (en) * 1988-03-02 1992-08-18 Hewlett-Packard Company Photoresist system and photoetching process employing an I-line peak light source
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
KR940010508B1 (ko) * 1991-09-18 1994-10-24 삼성전자 주식회사 미세패턴 형성방법
JPH05343279A (ja) * 1992-06-11 1993-12-24 Sony Corp 半導体装置の製造方法
US5407785A (en) * 1992-12-18 1995-04-18 Vlsi Technology, Inc. Method for generating dense lines on a semiconductor wafer using phase-shifting and multiple exposures
DE4408507A1 (de) * 1994-03-14 1995-09-28 Heidelberg Instruments Mikrotechnik Gmbh Lithografisches Verfahren
GB2291207B (en) * 1994-07-14 1998-03-25 Hyundai Electronics Ind Method for forming resist patterns
US6380077B1 (en) * 2001-04-13 2002-04-30 United Microelectronics Corp. Method of forming contact opening
US6764808B2 (en) * 2002-02-27 2004-07-20 Advanced Micro Devices, Inc. Self-aligned pattern formation using wavelenghts

Also Published As

Publication number Publication date
US7229723B2 (en) 2007-06-12
NL1025640C2 (nl) 2009-06-09
US20040197676A1 (en) 2004-10-07
DE10309266B3 (de) 2005-01-13

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Legal Events

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20090407

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20101001