MY186577A - Sic wafer producing method - Google Patents

Sic wafer producing method

Info

Publication number
MY186577A
MY186577A MYPI2017704329A MYPI2017704329A MY186577A MY 186577 A MY186577 A MY 186577A MY PI2017704329 A MYPI2017704329 A MY PI2017704329A MY PI2017704329 A MYPI2017704329 A MY PI2017704329A MY 186577 A MY186577 A MY 186577A
Authority
MY
Malaysia
Prior art keywords
ingot
predetermined depth
sic
wafer
producing method
Prior art date
Application number
MYPI2017704329A
Inventor
Hirata Kazuya
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of MY186577A publication Critical patent/MY186577A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/002—Precutting and tensioning or breaking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/08—Means for treating work or cutting member to facilitate cutting
    • B26D7/086—Means for treating work or cutting member to facilitate cutting by vibrating, e.g. ultrasonically

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

An SiC wafer producing method includes setting a focal point (FP) of a pulsed laser beam (LB) to a single crystal SiC inside an ingot (70) at a predetermined depth from an end surface (52) of the ingot (70), the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam (LB) is applied to the ingot (70), thereby forming a small circular modified portion (60) on a c-plane present in the ingot (70) at the predetermined depth, in which the modified portion (60) is a region where SiC has been decomposed into Si and C. A separation layer (64) is formed for separating the wafer from the ingot (70), the separation layer (64) being composed of a plurality of continuous modified portions (60) and a plurality of cracks (62) isotropically formed on the c-plane so as to extend from each modified portion (60). (Figure 5)
MYPI2017704329A 2016-12-02 2017-11-14 Sic wafer producing method MY186577A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016234958A JP2018093046A (en) 2016-12-02 2016-12-02 Wafer production method

Publications (1)

Publication Number Publication Date
MY186577A true MY186577A (en) 2021-07-27

Family

ID=62163839

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017704329A MY186577A (en) 2016-12-02 2017-11-14 Sic wafer producing method

Country Status (8)

Country Link
US (1) US10201907B2 (en)
JP (1) JP2018093046A (en)
KR (1) KR20180063832A (en)
CN (1) CN108145307B (en)
DE (1) DE102017220758A1 (en)
MY (1) MY186577A (en)
SG (1) SG10201709401QA (en)
TW (1) TWI732065B (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018093046A (en) * 2016-12-02 2018-06-14 株式会社ディスコ Wafer production method
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US20220168850A1 (en) * 2019-03-28 2022-06-02 Tokyo Electron Limited Processing apparatus and processing method
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP7330771B2 (en) * 2019-06-14 2023-08-22 株式会社ディスコ Wafer production method and wafer production apparatus
CN111215766A (en) * 2019-12-26 2020-06-02 松山湖材料实验室 Method for producing SiC wafer
CN111889896B (en) * 2020-07-02 2022-05-03 松山湖材料实验室 Ingot stripping method by ultrasonic-laser cooperation
CN111986986B (en) * 2020-08-24 2024-05-03 松山湖材料实验室 Wafer stripping method and stripping device
CN114670288B (en) * 2022-03-08 2023-08-15 海目星激光科技集团股份有限公司 Ultrasonic splitting method and splitting device
CN114473188A (en) * 2022-03-28 2022-05-13 杭州乾晶半导体有限公司 Laser processing method and device for stripping wafer
CN115770946B (en) * 2022-12-09 2024-01-23 苏州龙驰半导体科技有限公司 Wafer cutting method
JP7398852B1 (en) * 2023-06-23 2023-12-15 有限会社ドライケミカルズ Semiconductor crystal wafer manufacturing equipment and manufacturing method
CN117020397A (en) * 2023-09-20 2023-11-10 北京理工大学 Silicon carbide ingot stripping method based on space-time synchronous focusing laser
JP7429080B1 (en) 2023-11-28 2024-02-07 有限会社ドライケミカルズ Semiconductor crystal wafer manufacturing equipment and manufacturing method

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Also Published As

Publication number Publication date
TWI732065B (en) 2021-07-01
JP2018093046A (en) 2018-06-14
DE102017220758A1 (en) 2018-06-07
US10201907B2 (en) 2019-02-12
TW201825221A (en) 2018-07-16
KR20180063832A (en) 2018-06-12
CN108145307A (en) 2018-06-12
SG10201709401QA (en) 2018-07-30
CN108145307B (en) 2021-12-07
US20180154542A1 (en) 2018-06-07

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