MY184648A - Method and apparatus for material deposition - Google Patents
Method and apparatus for material depositionInfo
- Publication number
- MY184648A MY184648A MYPI20044983A MYPI20044983A MY184648A MY 184648 A MY184648 A MY 184648A MY PI20044983 A MYPI20044983 A MY PI20044983A MY PI20044983 A MYPI20044983 A MY PI20044983A MY 184648 A MY184648 A MY 184648A
- Authority
- MY
- Malaysia
- Prior art keywords
- wafer surface
- electroless plating
- planar member
- plating solution
- wafer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1667—Radiant energy, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
- C23C18/1612—Process or apparatus coating on selected surface areas by direct patterning through irradiation means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
- C23C18/1676—Heating of the solution
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
A method and an apparatus are provided for selective heating of a surface of a wafer (207, 1107) exposed to an electroless plating solution (203, 1103). Selective heating by a radiant energy source (209, 1109) causes a temperature increase at an interface between the wafer surface and the electroless plating solution (203, 1103). This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source (209, 1109). Additionally, a planar member (1119) can be positioned over and proximate to the wafer surface to entrap electroless plating solution (1103) between the planar member (1119) and the wafer surface. Material deposited through the plating reactions forms a planarizing layer (1201) that conforms to a planarity of the planar member. (Figure 2A)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/735,216 US7358186B2 (en) | 2003-12-12 | 2003-12-12 | Method and apparatus for material deposition in semiconductor fabrication |
US10/734,704 US7368017B2 (en) | 2003-12-12 | 2003-12-12 | Method and apparatus for semiconductor wafer planarization |
Publications (1)
Publication Number | Publication Date |
---|---|
MY184648A true MY184648A (en) | 2021-04-14 |
Family
ID=34713904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20044983A MY184648A (en) | 2003-12-12 | 2004-12-02 | Method and apparatus for material deposition |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1692324B1 (en) |
JP (1) | JP4742047B2 (en) |
KR (1) | KR101233444B1 (en) |
MY (1) | MY184648A (en) |
SG (3) | SG149018A1 (en) |
TW (1) | TWI319784B (en) |
WO (1) | WO2005061760A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220290302A1 (en) * | 2019-08-27 | 2022-09-15 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and computer-readable recording medium |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239789A (en) * | 1979-05-08 | 1980-12-16 | International Business Machines Corporation | Maskless method for electroless plating patterns |
US4359485A (en) * | 1981-05-01 | 1982-11-16 | Bell Telephone Laboratories, Incorporated | Radiation induced deposition of metal on semiconductor surfaces |
JPS61104083A (en) * | 1984-10-27 | 1986-05-22 | Hitachi Ltd | Electroless plating method |
EP0260516A1 (en) * | 1986-09-15 | 1988-03-23 | General Electric Company | Photoselective metal deposition process |
US4982065A (en) * | 1989-03-07 | 1991-01-01 | Ngk Insulators, Ltd. | Method of producing a core for magnetic head |
US5260108A (en) * | 1992-03-10 | 1993-11-09 | International Business Machines Corporation | Selective seeding of Pd by excimer laser radiation through the liquid |
JPH10219468A (en) * | 1997-02-07 | 1998-08-18 | Matsushita Electric Ind Co Ltd | Formation of conducting film |
JPH1192951A (en) * | 1997-09-16 | 1999-04-06 | Ebara Corp | Method for plating substrate |
US5989653A (en) * | 1997-12-08 | 1999-11-23 | Sandia Corporation | Process for metallization of a substrate by irradiative curing of a catalyst applied thereto |
JP3792038B2 (en) * | 1998-01-09 | 2006-06-28 | 株式会社荏原製作所 | Plating equipment |
IE980461A1 (en) * | 1998-06-15 | 2000-05-03 | Univ Cork | Method for selective activation and metallisation of materials |
ATE363821T1 (en) * | 1998-12-10 | 2007-06-15 | Lpkf Laser & Electronics Ag | METHOD FOR PRODUCING CONDUCTIVE TRACK STRUCTURES |
JP4035752B2 (en) * | 2000-03-31 | 2008-01-23 | セイコーエプソン株式会社 | Manufacturing method of fine structure |
-
2004
- 2004-12-02 MY MYPI20044983A patent/MY184648A/en unknown
- 2004-12-07 EP EP04813286.4A patent/EP1692324B1/en not_active Not-in-force
- 2004-12-07 WO PCT/US2004/040951 patent/WO2005061760A1/en active Application Filing
- 2004-12-07 KR KR1020067011581A patent/KR101233444B1/en active IP Right Grant
- 2004-12-07 SG SG200809204-1A patent/SG149018A1/en unknown
- 2004-12-07 SG SG200809205-8A patent/SG149019A1/en unknown
- 2004-12-07 JP JP2006543928A patent/JP4742047B2/en not_active Expired - Fee Related
- 2004-12-07 SG SG2012043196A patent/SG182190A1/en unknown
- 2004-12-10 TW TW093138385A patent/TWI319784B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1692324B1 (en) | 2018-10-03 |
WO2005061760A1 (en) | 2005-07-07 |
SG149018A1 (en) | 2009-01-29 |
EP1692324A1 (en) | 2006-08-23 |
SG182190A1 (en) | 2012-07-30 |
JP2007525594A (en) | 2007-09-06 |
SG149019A1 (en) | 2009-01-29 |
TW200526811A (en) | 2005-08-16 |
JP4742047B2 (en) | 2011-08-10 |
KR20060123313A (en) | 2006-12-01 |
KR101233444B1 (en) | 2013-02-14 |
TWI319784B (en) | 2010-01-21 |
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