MY178171A - Sputtering target containing co or fe - Google Patents

Sputtering target containing co or fe

Info

Publication number
MY178171A
MY178171A MYPI2015702204A MYPI2015702204A MY178171A MY 178171 A MY178171 A MY 178171A MY PI2015702204 A MYPI2015702204 A MY PI2015702204A MY PI2015702204 A MYPI2015702204 A MY PI2015702204A MY 178171 A MY178171 A MY 178171A
Authority
MY
Malaysia
Prior art keywords
nonmagnetic material
grain
metal
grains
distances
Prior art date
Application number
MYPI2015702204A
Inventor
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY178171A publication Critical patent/MY178171A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Thin Magnetic Films (AREA)

Abstract

The present invention provides a sintered sputtering target, of which structure observed on a polished surface of the target is configured from nonmagnetic material grains having an average grain diameter of 1.8 ?m or less, a metal phase containing Co or Fe in which nonmagnetic material grains are dispersed and metal grains containing Co or Fe; and in which nonmagnetic material grains having a difference of 0.7 ?m or less between a maximum diameter and a minimum diameter is 60% or more of nonmagnetic material grains in a structure observed on the polished surface of the target, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the nonmagnetic material grain and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the grain, and in which one or more metal grains having a sum of the maximum diameter and the minimum diameter of 30 ?m or more are present on average in 1 mm2 field of view, defining a maximum diameter as the greatest value of distances between any two points on the outer periphery of the metal grain, and a minimum diameter as the smallest value of distances between two parallel lines when the two lines sandwich the metal grain. The sintered sputtering target of the present invention can suppress an abnormal discharge due to a nonmagnetic material which may cause particle generation during sputtering.
MYPI2015702204A 2013-02-15 2014-01-24 Sputtering target containing co or fe MY178171A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013028388 2013-02-15

Publications (1)

Publication Number Publication Date
MY178171A true MY178171A (en) 2020-10-06

Family

ID=51353907

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2018703713A MY185389A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe
MYPI2015702204A MY178171A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MYPI2018703713A MY185389A (en) 2013-02-15 2014-01-24 Sputtering target containing co or fe

Country Status (6)

Country Link
JP (2) JP6332869B2 (en)
CN (1) CN104903488B (en)
MY (2) MY185389A (en)
SG (1) SG11201503676WA (en)
TW (1) TWI608114B (en)
WO (1) WO2014125897A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105056926A (en) * 2015-07-24 2015-11-18 武汉纺织大学 Novel TiO2/WO3 coated magnetic nano composite particles and preparation method therefor and use thereof
JP6660130B2 (en) * 2015-09-18 2020-03-04 山陽特殊製鋼株式会社 CoFeB alloy target material
US10837101B2 (en) 2016-03-31 2020-11-17 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target
TWI702294B (en) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 Sputtering target for magnetic recording media
US20220383901A1 (en) * 2019-11-01 2022-12-01 Tanaka Kikinzoku Kogyo K.K. Sputtering target for heat-assisted magnetic recording medium
JP7317741B2 (en) * 2020-02-07 2023-07-31 Ｊｘ金属株式会社 Sputtering targets, magnetic films, and mixed raw material powders for making sputtering targets
JP2024010347A (en) * 2022-07-12 2024-01-24 田中貴金属工業株式会社 Co-Cr-Pt-OXIDE BASED SPUTTERING TARGET

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000234168A (en) * 1998-12-07 2000-08-29 Japan Energy Corp Sputtering target for forming optical disk protective film
JP2009001860A (en) * 2007-06-21 2009-01-08 Mitsubishi Materials Corp Sputtering target for use in forming film of perpendicular magnetic recording medium having low relative magnetic permeability
JP5204460B2 (en) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 Sputtering target for magnetic recording film and manufacturing method thereof
SG172790A1 (en) * 2009-03-27 2011-08-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
MY149640A (en) * 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
SG185768A1 (en) * 2010-07-20 2013-01-30 Jx Nippon Mining & Metals Corp Sputtering target of ferromagnetic material with low generation of particles
CN103081009B (en) * 2010-08-31 2016-05-18 吉坤日矿日石金属株式会社 Fe-Pt type ferromagnetic material sputtering target
JP5623552B2 (en) * 2010-12-20 2014-11-12 Jx日鉱日石金属株式会社 Fe-Pt ferromagnetic sputtering target and manufacturing method thereof
JP5888664B2 (en) * 2010-12-20 2016-03-22 Ｊｘ金属株式会社 Ferromagnetic sputtering target
US20130213802A1 (en) * 2010-12-22 2013-08-22 Jx Nippon Mining & Metals Corporation Sintered Compact Sputtering Target

Also Published As

Publication number Publication date
CN104903488A (en) 2015-09-09
TWI608114B (en) 2017-12-11
WO2014125897A1 (en) 2014-08-21
JP6332869B2 (en) 2018-05-30
MY185389A (en) 2021-05-17
JP2017137570A (en) 2017-08-10
TW201443262A (en) 2014-11-16
CN104903488B (en) 2018-02-16
JPWO2014125897A1 (en) 2017-02-02
JP6359622B2 (en) 2018-07-18
SG11201503676WA (en) 2015-06-29

Similar Documents

Publication Publication Date Title
MY178171A (en) Sputtering target containing co or fe
MY169053A (en) Magnetic material sputtering target and manufacturing method for same
MY176729A (en) Substrate for a magnetic disk
MY182369A (en) Aluminum alloy substrate for magnetic disk
EP3389862A4 (en) Spheroidal dehydrogenated metals and metal alloy particles
EP3559142A4 (en) Magnetizable agglomerate abrasive particles, abrasive articles, and methods of making the same
EP3532561A4 (en) Magnetizable abrasive particles and abrasive articles including them
MX2016013376A (en) Low pressure sintering powder.
MY161232A (en) Fe-pt-based ferromagnetic sputtering target and method for producing same
MX2021012926A (en) Imide-based modulators of proteolysis and associated methods of use.
WO2016100374A3 (en) Tough and wear resistant ferrous alloys containing multiple hardphases
AU2018338441A1 (en) Tumor mutational load and checkpoint immunotherapy
MX2017012346A (en) Novel composite of iron compound and graphene oxide.
MY172839A (en) Fept-c-based sputtering target and method for manufacturing same
MY186238A (en) Ferromagnetic material sputtering target
CA3011089A1 (en) Binder compositions of tungsten tetraboride and abrasive methods thereof
MY167394A (en) C grain dispersed fe-pt-based sputtering target
EP3532247A4 (en) Magnetizable abrasive particle and method of making the same
MY165736A (en) Sputtering target
MY179890A (en) Sputtering target for magnetic recording film formation and production method therefor
SG10202111088SA (en) Non-magnetic substrate for magnetic disk, and magnetic disk
MY192178A (en) Fept-c-based sputtering target
EP3636051A4 (en) Flocculates of metallic, geometrically discrete nanoparticles compositions and methods of forming the same
MX2019004497A (en) Coated abrasives having a blend of abrasive particles and increased tear resistance.
MY174423A (en) Perpendicular magnetic recording medium