MY174333A - Image sensor with solar cell function - Google Patents

Image sensor with solar cell function

Info

Publication number
MY174333A
MY174333A MYPI2016703702A MYPI2016703702A MY174333A MY 174333 A MY174333 A MY 174333A MY PI2016703702 A MYPI2016703702 A MY PI2016703702A MY PI2016703702 A MYPI2016703702 A MY PI2016703702A MY 174333 A MY174333 A MY 174333A
Authority
MY
Malaysia
Prior art keywords
solar cell
switched
image sensor
photo detector
wired
Prior art date
Application number
MYPI2016703702A
Inventor
Hoon Kim
Original Assignee
Hoon Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/883,587 external-priority patent/US9735188B2/en
Application filed by Hoon Kim filed Critical Hoon Kim
Publication of MY174333A publication Critical patent/MY174333A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A unit pixel element (700, 1000, 1100) that acts as an image sensor or a solar cell according to the present invention comprises a photo detector (300) that drives a photocurrent flow, induced by light incident onto the gate, along the channel between the source and the drain; a first switch (Ms) that is wired and switched on or switched off between the source terminal of the photo detector (300) and the first solar cell bus (SCB1); and a second switch (Mg) that is wired and switched on or switched off between the gate terminal of the photo detector (300) and the second solar cell bus (SCB2), and features a function of light energy harvesting and high-efficiency photoelectric conversion that generates and supplies effective electric power. (FIG. 7)
MYPI2016703702A 2015-10-14 2016-10-07 Image sensor with solar cell function MY174333A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/883,587 US9735188B2 (en) 2015-01-15 2015-10-14 Image sensor with solar cell function

Publications (1)

Publication Number Publication Date
MY174333A true MY174333A (en) 2020-04-08

Family

ID=58605976

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2016703702A MY174333A (en) 2015-10-14 2016-10-07 Image sensor with solar cell function

Country Status (3)

Country Link
JP (1) JP6481898B2 (en)
CN (1) CN106601762B (en)
MY (1) MY174333A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10158041B2 (en) * 2014-07-09 2018-12-18 Hoon Kim Unit pixel of image sensor and photo detector using the same
CN111787213A (en) * 2020-07-31 2020-10-16 维沃移动通信有限公司 Camera module and electronic equipment
CN115911139B (en) * 2022-11-29 2023-10-27 山东中科际联光电集成技术研究院有限公司 Overload-resistant light receiving assembly

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JPS5850030B2 (en) * 1979-03-08 1983-11-08 日本放送協会 Photoelectric conversion device and solid-state imaging plate using it
JPS59158551A (en) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd Semiconductor photodetector and driving method thereof
JPS61228668A (en) * 1985-04-01 1986-10-11 Mitsubishi Electric Corp Solid-state image pick-up device
JPS61228667A (en) * 1985-04-01 1986-10-11 Mitsubishi Electric Corp Solid-state image pick-up device
JPH02224481A (en) * 1989-02-27 1990-09-06 Hitachi Ltd Amplification type solid-state image pickup element
JP2963182B2 (en) * 1990-10-15 1999-10-12 日本電信電話株式会社 Light receiving element
JPH0653463A (en) * 1992-07-31 1994-02-25 Matsushita Electron Corp Semiconductor device
JPH06283695A (en) * 1993-03-29 1994-10-07 Matsushita Electric Ind Co Ltd Two-dimensional solid state image sensor and image sensing system
JPH07255013A (en) * 1994-01-31 1995-10-03 Sony Corp Solid-state image pickup device
JP2878137B2 (en) * 1994-06-29 1999-04-05 シャープ株式会社 Amplification type photoelectric conversion element, amplification type solid-state imaging device using the same, and method of manufacturing amplification type photoelectric conversion element
JP2937047B2 (en) * 1994-12-26 1999-08-23 日本電気株式会社 Image input device
JP3544084B2 (en) * 1996-12-10 2004-07-21 シャープ株式会社 Amplification type solid-state imaging device
JP2000277702A (en) * 1999-03-25 2000-10-06 Rohm Co Ltd Semiconductor integrated circuit device
JP2001085660A (en) * 1999-09-10 2001-03-30 Toshiba Corp Solid-state image pick up device and method of controlling the same
JP2001177702A (en) * 1999-12-20 2001-06-29 Nec Shizuoka Ltd Cordless hand scanner
AU2001295618A1 (en) * 2000-10-19 2002-04-29 Carlos J. R. P. Augusto Method of fabricating heterojunction photodiodes integrated with cmos
US6580106B2 (en) * 2001-01-12 2003-06-17 Isetex. Inc CMOS image sensor with complete pixel reset without kTC noise generation
JP2007281144A (en) * 2006-04-05 2007-10-25 Fujifilm Corp Solid state image sensor and imaging apparatus
WO2009136285A2 (en) * 2008-04-16 2009-11-12 Quantum Semiconductor Llc Pixel circuitry for ultra wide dynamic range
JP5522932B2 (en) * 2008-12-25 2014-06-18 キヤノン株式会社 Photoelectric conversion device and driving method of photoelectric conversion device
US8436288B2 (en) * 2009-04-24 2013-05-07 Quantum Semiconductor Llc Image sensors with photo-current mode and solar cell operation
US8569806B2 (en) * 2011-09-02 2013-10-29 Hoon Kim Unit pixel of image sensor and photo detector thereof
US8610234B2 (en) * 2011-09-02 2013-12-17 Hoon Kim Unit pixel of image sensor and photo detector thereof
US10158041B2 (en) * 2014-07-09 2018-12-18 Hoon Kim Unit pixel of image sensor and photo detector using the same
JP6459271B2 (en) * 2014-07-23 2019-01-30 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 Image sensor and driving method thereof
MY176378A (en) * 2015-10-14 2020-08-04 Hoon Kim Image sensor with solar cell function and electronic device thereof

Also Published As

Publication number Publication date
CN106601762A (en) 2017-04-26
JP2017076797A (en) 2017-04-20
CN106601762B (en) 2019-06-28
JP6481898B2 (en) 2019-03-13

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