MY170997A - Method and apparatus for validating experimental data provided for transistor modeling - Google Patents

Method and apparatus for validating experimental data provided for transistor modeling

Info

Publication number
MY170997A
MY170997A MYPI2014002165A MYPI2014002165A MY170997A MY 170997 A MY170997 A MY 170997A MY PI2014002165 A MYPI2014002165 A MY PI2014002165A MY PI2014002165 A MYPI2014002165 A MY PI2014002165A MY 170997 A MY170997 A MY 170997A
Authority
MY
Malaysia
Prior art keywords
experimental data
consistency check
data provided
data
consistency
Prior art date
Application number
MYPI2014002165A
Inventor
Amri Bin Ismail Muhamad
Binti Saidin Nurafizah
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2014002165A priority Critical patent/MY170997A/en
Priority to PCT/IB2015/055345 priority patent/WO2016012904A1/en
Publication of MY170997A publication Critical patent/MY170997A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Evolutionary Computation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Model parameter extraction for transistor modeling relies on experimental data provided and any discrepancy therein, if undetected at the outset, results in inaccurate models and delay in device/technology development. The method and apparatus of the present disclosure addresses this problem by introducing a consistency check prior to the model extraction stage. The method requires a set of experimental data, such as measured drain currents from the actual fabricated wafer for consistency check. The experimental data is formatted into readable ASCII or text file data for identification of unique points. A set of computer instructions which form the apparatus that evaluates the data consistency then provides the result of the consistency check to permit or restrain the model parameter extraction stage.
MYPI2014002165A 2014-07-23 2014-07-23 Method and apparatus for validating experimental data provided for transistor modeling MY170997A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2014002165A MY170997A (en) 2014-07-23 2014-07-23 Method and apparatus for validating experimental data provided for transistor modeling
PCT/IB2015/055345 WO2016012904A1 (en) 2014-07-23 2015-07-15 Method and apparatus for validating experimental data provided for transistor modeling

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2014002165A MY170997A (en) 2014-07-23 2014-07-23 Method and apparatus for validating experimental data provided for transistor modeling

Publications (1)

Publication Number Publication Date
MY170997A true MY170997A (en) 2019-09-23

Family

ID=55162563

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2014002165A MY170997A (en) 2014-07-23 2014-07-23 Method and apparatus for validating experimental data provided for transistor modeling

Country Status (2)

Country Link
MY (1) MY170997A (en)
WO (1) WO2016012904A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6756866B1 (en) * 2019-03-19 2020-09-16 ウィンボンド エレクトロニクス コーポレーション Semiconductor storage device test equipment and test method
CN116776801A (en) * 2023-06-25 2023-09-19 北京华大九天科技股份有限公司 MOS model parameter symmetry checking method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1065159A (en) * 1996-08-22 1998-03-06 Sharp Corp Model parameter optimizing apparatus for circuit simulation
JP2002124666A (en) * 2000-10-13 2002-04-26 Matsushita Electric Ind Co Ltd Spice transistor parameter extracting method

Also Published As

Publication number Publication date
WO2016012904A1 (en) 2016-01-28

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