MY162450A - Ferromagnetic sputtering target with less particle generation - Google Patents

Ferromagnetic sputtering target with less particle generation

Info

Publication number
MY162450A
MY162450A MYPI2013003400A MYPI2013003400A MY162450A MY 162450 A MY162450 A MY 162450A MY PI2013003400 A MYPI2013003400 A MY PI2013003400A MY PI2013003400 A MYPI2013003400 A MY PI2013003400A MY 162450 A MY162450 A MY 162450A
Authority
MY
Malaysia
Prior art keywords
phase
sputtering target
particle generation
less
metal
Prior art date
Application number
MYPI2013003400A
Inventor
Shin-Ichi Ogino
Atsushi Sato
Atsutoshi Arakawa
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY162450A publication Critical patent/MY162450A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

PROVIDED IS A NONMAGNETIC-MATERIAL-DISPERSED SPUTTERING TARGET HAVING A METAL COMPOSITION COMPRISING 20 MOL% OR LESS OF CR AND THE BALANCE OF CO. THE TARGET HAS A STRUCTURE INCLUDING A PHASE (A) IN WHICH A NONMAGNETIC OXIDE MATERIAL IS DISPERSED IN THE BASIS METAL, AND A METAL PHASE (B) CONTAINING 40 MOL% OR MORE OF CO; THE AREA PROPORTION OF GRAINS OF THE NONMAGNETIC OXIDE MATERIAL IN THE PHASE (A) IS 50% OR LESS; AND WHEN A MINIMUM-AREA RECTANGLE CIRCUMSCRIBED TO THE PHASE (B) IS ASSUMED, THE PROPORTION OF THE CIRCUMSCRIBED RECTANGLE HAVING A SHORT SIDE OF 2 TO 300 µM IS 90% OR MORE OF ALL OF THE PHASES (B). THE FERROMAGNETIC SPUTTERING TARGET CAN SUPPRESS PARTICLE GENERATION DURING SPUTTERING AND CAN IMPROVE LEAKAGE MAGNETIC FLUX TO ALLOW STABLE ELECTRICAL DISCHARGE WITH A MAGNETRON SPUTTERING APPARATUS.
MYPI2013003400A 2011-08-23 2012-04-06 Ferromagnetic sputtering target with less particle generation MY162450A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011181969 2011-08-23

Publications (1)

Publication Number Publication Date
MY162450A true MY162450A (en) 2017-06-15

Family

ID=47746199

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013003400A MY162450A (en) 2011-08-23 2012-04-06 Ferromagnetic sputtering target with less particle generation

Country Status (7)

Country Link
US (1) US20140001038A1 (en)
JP (1) JP5763178B2 (en)
CN (1) CN104105812B (en)
MY (1) MY162450A (en)
SG (2) SG10201500148WA (en)
TW (1) TWI534285B (en)
WO (1) WO2013027443A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG172790A1 (en) 2009-03-27 2011-08-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
CN102482764B (en) 2009-08-06 2014-06-18 吉坤日矿日石金属株式会社 Inorganic particle-dispersed sputtering target
CN102471876B (en) * 2010-01-21 2014-04-30 吉坤日矿日石金属株式会社 Ferromagnetic material sputtering target
CN103210115B (en) 2010-07-29 2016-01-20 吉坤日矿日石金属株式会社 Magnetic recording film sputtering target and manufacture method thereof
WO2013108520A1 (en) 2012-01-18 2013-07-25 Jx日鉱日石金属株式会社 Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
SG11201404314WA (en) 2012-02-22 2014-10-30 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and manufacturing method for same
US9773653B2 (en) 2012-02-23 2017-09-26 Jx Nippon Mining & Metals Corporation Ferromagnetic material sputtering target containing chromium oxide
CN104170015B (en) 2012-03-09 2018-08-31 吉坤日矿日石金属株式会社 Magnetic recording media sputtering target and its manufacturing method
MY167825A (en) 2012-06-18 2018-09-26 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
EP3015566B1 (en) * 2013-11-28 2021-09-15 JX Nippon Mining & Metals Corporation Magnetic material sputtering target and method for producing same
JP6005767B2 (en) * 2014-01-17 2016-10-12 Ｊｘ金属株式会社 Sputtering target for magnetic recording media
SG11201807804PA (en) 2016-03-31 2018-10-30 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target
TWI702294B (en) * 2018-07-31 2020-08-21 日商田中貴金屬工業股份有限公司 Sputtering target for magnetic recording media

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119812A1 (en) * 2008-03-28 2009-10-01 日鉱金属株式会社 Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material
JP2010222639A (en) * 2009-03-24 2010-10-07 Mitsubishi Materials Corp METHOD OF MANUFACTURING Co-BASED SINTERED ALLOY SPUTTERING TARGET FOR FORMING MAGNETIC RECORDING FILM HAVING LOW MAGNETIC PERMEABILITY
SG172790A1 (en) * 2009-03-27 2011-08-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type
JP4422203B1 (en) * 2009-04-01 2010-02-24 Ｔａｎａｋａホールディングス株式会社 Magnetron sputtering target and method for manufacturing the same
CN102482764B (en) * 2009-08-06 2014-06-18 吉坤日矿日石金属株式会社 Inorganic particle-dispersed sputtering target
JP4673453B1 (en) * 2010-01-21 2011-04-20 Ｊｘ日鉱日石金属株式会社 Ferromagnetic material sputtering target
CN102471876B (en) * 2010-01-21 2014-04-30 吉坤日矿日石金属株式会社 Ferromagnetic material sputtering target

Also Published As

Publication number Publication date
JPWO2013027443A1 (en) 2015-03-19
TW201309829A (en) 2013-03-01
CN104105812A (en) 2014-10-15
US20140001038A1 (en) 2014-01-02
TWI534285B (en) 2016-05-21
WO2013027443A1 (en) 2013-02-28
CN104105812B (en) 2017-05-24
SG10201500148WA (en) 2015-03-30
SG193277A1 (en) 2013-10-30
JP5763178B2 (en) 2015-08-12

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