MY147144A - Electromagnetic induced field effect transistor (emifet) - Google Patents
Electromagnetic induced field effect transistor (emifet)Info
- Publication number
- MY147144A MY147144A MYPI20082366A MYPI20082366A MY147144A MY 147144 A MY147144 A MY 147144A MY PI20082366 A MYPI20082366 A MY PI20082366A MY PI20082366 A MYPI20082366 A MY PI20082366A MY 147144 A MY147144 A MY 147144A
- Authority
- MY
- Malaysia
- Prior art keywords
- effect transistor
- emifet
- field effect
- induced field
- electromagnetic induced
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Molecular Biology (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Abstract
AN IMPROVED FIELD-EFFECT TRANSISTOR FOR MEASURING BIOCHEMICAL PROPERTIES IN AQUEOUS FORM BY DETECTING THE DIELECTRIC OF THE OBJECTS.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20082366A MY147144A (en) | 2008-06-27 | 2008-06-27 | Electromagnetic induced field effect transistor (emifet) |
PCT/MY2009/000084 WO2009157754A2 (en) | 2008-06-27 | 2009-06-26 | Electromagnetic induced field effect transistor (emifet) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI20082366A MY147144A (en) | 2008-06-27 | 2008-06-27 | Electromagnetic induced field effect transistor (emifet) |
Publications (1)
Publication Number | Publication Date |
---|---|
MY147144A true MY147144A (en) | 2012-11-14 |
Family
ID=41445129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20082366A MY147144A (en) | 2008-06-27 | 2008-06-27 | Electromagnetic induced field effect transistor (emifet) |
Country Status (2)
Country | Link |
---|---|
MY (1) | MY147144A (en) |
WO (1) | WO2009157754A2 (en) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003069327A1 (en) * | 2002-02-11 | 2003-08-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Ion-sensitive field effect transistor and a method for producing a transistor of this type |
EP1583957B1 (en) * | 2002-11-14 | 2009-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor |
WO2004079355A1 (en) * | 2003-03-07 | 2004-09-16 | Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V: | Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor |
-
2008
- 2008-06-27 MY MYPI20082366A patent/MY147144A/en unknown
-
2009
- 2009-06-26 WO PCT/MY2009/000084 patent/WO2009157754A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2009157754A2 (en) | 2009-12-30 |
WO2009157754A3 (en) | 2010-04-22 |
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