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Application filed by Univ Malaysia TechfiledCriticalUniv Malaysia Tech
Priority to MYPI2010001137priorityCriticalpatent/MY145612A/en
Publication of MY145612ApublicationCriticalpatent/MY145612A/en
AN APPARATUS FOR DEPOSITING SILICON CARBIDE (3C-SIC) THIN FILM ON THE SILICON (SI) SUBSTRATES USING MONOMETHYSILANE (MMS OR SIH3CH3) AS SOURCE GAS AND HYDROGEN RADICALS AS CARRIER GAS. PREFERABLY, HYDROGEN RADICALS (2 ) ARE GENERATED BY THE TUNGSTEN MESH WIRE (3) VIA CATALYTIC CRACKING REACTION. SAID APPARATUS COMPRISES A CHAMBER BODY (6) IN WHICH A SUBSTRATE SUPPORTING MEMBER (8) IS DISPOSED FOR PLACING SUBSTRATES, A THERMAL CATALYTIC BODY CONSISTING TUNGSTEN MESH WIRE (3) FOR GENERATING HIGH DENSITY OF RADICAL CARRIER GAS TO REACT WITH THE SOURCE GAS, A HEATER (7) EQUIPPED WITH A TEMPERATURE CONTROLLER LOCATED NEAR TO THE SUBSTRATE SUPPORTING MEMBER (8) FOR HEATING THE SUBSTRATE UP TO A CERTAIN TEMPERATURE, A PLURALITY OF GAS SUPPLY UNITS FOR PROVIDING GASEOUS TO THE CHAMBER (6), A VACUUM SYSTEM COOPERATES WITH A PUMPING SYSTEM INCLUDES TURBO-MOLECULAR PUMPING AND ROTATING MECHANICAL PUMP (12) TO EVACUATE THE GASES FROM THE CHAMBER, AND AN EXHAUST SYSTEM PROVIDED TO ELIMINATE THE HARMFUL BYPRODUCTS FROM THE PROCESS CHAMBER.
MYPI20100011372010-03-152010-03-15Hot mesh chemical vapor deposition system for silicon carbide thin film deposition
MY145612A
(en)