MY110622A - Blu-green laser diode - Google Patents
Blu-green laser diodeInfo
- Publication number
- MY110622A MY110622A MYPI92000817A MYPI19920817A MY110622A MY 110622 A MY110622 A MY 110622A MY PI92000817 A MYPI92000817 A MY PI92000817A MY PI19920817 A MYPI19920817 A MY PI19920817A MY 110622 A MY110622 A MY 110622A
- Authority
- MY
- Malaysia
- Prior art keywords
- layer
- type
- energy
- electrode
- guiding
- Prior art date
Links
- 239000000370 acceptor Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2213—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on polyimide or resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
- H01S5/3059—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping in II-VI materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Luminescent Compositions (AREA)
Abstract
A II-VI COMPOUND SEMICONDUCTOR LASER DIODE (10) IS FORMED FROM OVERLAYING LAYERS OF MATERIAL INCLUDING AN N-TYPE SINGLE CRYSTAL SEMICONDUCTOR SUBSTRATE (12), ADJACENT N-TYPE AND P-TYPE GUIDING LASERS (14 AND 16) OF II-VI SEMICONDUCTOR FORMING A PN JUCTION, A QUANTUM WELL ACTIVE LAYER (18) OF II-VI SEMICONDUCTOR BETWEEN THE GUIDING LAYERS (14 AND 16), FIRST ELECTRODE (32) OPPOSITE THE SUBSTRATE (12) FROM THE N-TYPE GUIDING LAYER (14), AND A SECOND ELECTRODE (30) OPPOSITE THE P-TYPE GUIDING LAYER (16) FROM THE QUANTUM WELL LAYER (18). ELECTRODE LAYER (30) IS CHARACTERIZED BY AFERMI ENERGY. A P-TYPE OHMIC CONTACT LAYER (26) IS DOPED, WITH SHALLOW ACCEPTORS HAVING A SHALLOW ACCEPTOR ENERGY, TO A NET ACCEPTOR CONCENTRATION OF AT LEAST 1 x 1017CM-3, AND INCLUDES SUFFICIENT DEEP ENERGY STATES BETWEEN THE SHALLOW ACCEPTOR ENERGY AND THE ELECTRODE LAYER FERMI ENERGY TO ENABLE CASCADE TUNNELING BY CHARGE CARRIERS.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70060191A | 1991-05-15 | 1991-05-15 | |
US07/700,606 US5274269A (en) | 1991-05-15 | 1991-05-15 | Ohmic contact for p-type group II-IV compound semiconductors |
US07/700,580 US5213998A (en) | 1991-05-15 | 1991-05-15 | Method for making an ohmic contact for p-type group II-VI compound semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
MY110622A true MY110622A (en) | 1998-09-30 |
Family
ID=27418708
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI95003142A MY111574A (en) | 1991-05-15 | 1992-05-14 | Blue-green laser diode |
MYPI92000817A MY110622A (en) | 1991-05-15 | 1992-05-14 | Blu-green laser diode |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI95003142A MY111574A (en) | 1991-05-15 | 1992-05-14 | Blue-green laser diode |
Country Status (16)
Country | Link |
---|---|
EP (2) | EP0584236B1 (en) |
JP (1) | JP3269558B2 (en) |
KR (1) | KR100247682B1 (en) |
CN (2) | CN1321488C (en) |
AU (1) | AU654726B2 (en) |
BR (1) | BR9205993A (en) |
CA (1) | CA2109310C (en) |
DE (1) | DE69220942T2 (en) |
ES (1) | ES2104931T3 (en) |
FI (1) | FI110971B (en) |
HK (1) | HK1001353A1 (en) |
IL (1) | IL101857A (en) |
MY (2) | MY111574A (en) |
RU (1) | RU2127478C1 (en) |
SG (1) | SG46466A1 (en) |
WO (1) | WO1992021170A2 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
US5341001A (en) * | 1992-02-13 | 1994-08-23 | Matsushita Electric Industrial Co., Ltd. | Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode |
JP3453787B2 (en) * | 1993-06-18 | 2003-10-06 | ソニー株式会社 | Semiconductor laser and manufacturing method thereof |
US5640409A (en) * | 1993-07-02 | 1997-06-17 | Sony Corporation | Semiconductor laser |
US5422902A (en) * | 1993-07-02 | 1995-06-06 | Philips Electronics North America Corporation | BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors |
MY111898A (en) * | 1993-07-02 | 2001-02-28 | Sony Corp | Semiconductor laser |
JPH07231142A (en) * | 1994-02-18 | 1995-08-29 | Mitsubishi Electric Corp | Semiconductor light emitting element |
JPH07263372A (en) * | 1994-03-24 | 1995-10-13 | Sharp Corp | Ii-vi compound semiconductor device and its manufacture |
US5442204A (en) * | 1994-05-12 | 1995-08-15 | Philips Electronics North America Corporation | III-V Semiconductor heterostructure contacting a P-type II-VI compound |
US6876003B1 (en) | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
DE10260183A1 (en) * | 2002-12-20 | 2004-07-15 | Osram Opto Semiconductors Gmbh | Vertically emitting optically pumped semiconductor laser with external resonator and semiconductor body with quantum trough structure as active zone with intertrough barriers |
JP4085953B2 (en) * | 2003-10-22 | 2008-05-14 | 住友電気工業株式会社 | Semiconductor optical device |
JP4411540B2 (en) * | 2005-09-15 | 2010-02-10 | ソニー株式会社 | Semiconductor laser device |
TWI649895B (en) * | 2010-04-30 | 2019-02-01 | 美國波士頓大學信託會 | High-efficiency ultraviolet light-emitting diode with variable structure position |
CN102185058B (en) * | 2011-04-02 | 2013-09-25 | 映瑞光电科技(上海)有限公司 | Nitride light-emitting diode (LED) structure and preparation method thereof |
CN102185060B (en) * | 2011-04-15 | 2014-07-16 | 映瑞光电科技(上海)有限公司 | Nitride light emitting diode (LED) structure and preparation method thereof |
WO2014188149A1 (en) | 2013-05-20 | 2014-11-27 | Milan Momcilo Popovich | Holographic waveguide eye tracker |
US20180275402A1 (en) | 2015-01-12 | 2018-09-27 | Digilens, Inc. | Holographic waveguide light field displays |
CN107873086B (en) | 2015-01-12 | 2020-03-20 | 迪吉伦斯公司 | Environmentally isolated waveguide display |
CN108474945B (en) | 2015-10-05 | 2021-10-01 | 迪吉伦斯公司 | Waveguide display |
DE102019205376A1 (en) * | 2019-04-15 | 2020-10-15 | Forschungszentrum Jülich | Establishing an ohmic contact and an electronic component with an ohmic contact |
JP7207365B2 (en) * | 2019-06-19 | 2023-01-18 | 株式会社デンソー | Semiconductor laser light source module, semiconductor laser device |
KR20220054386A (en) | 2019-08-29 | 2022-05-02 | 디지렌즈 인코포레이티드. | Vacuum Bragg grating and manufacturing method thereof |
DE102021004609A1 (en) | 2021-09-11 | 2023-03-16 | Eques Consulting GmbH | Device and method that can be carried out with it for the non-invasive determination of the concentration of components in the human bloodstream and use of the method. |
CN115498077A (en) * | 2022-09-22 | 2022-12-20 | 深圳市思坦科技有限公司 | Preparation method of red light micro LED chip, red light micro LED chip and display device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5863183A (en) * | 1981-10-09 | 1983-04-14 | Semiconductor Res Found | 2-6 group compound semiconductor device |
JPS60178684A (en) * | 1984-02-24 | 1985-09-12 | Nec Corp | Semiconductor laser |
JPH0728052B2 (en) * | 1986-01-27 | 1995-03-29 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
JPS63185077A (en) * | 1987-01-27 | 1988-07-30 | Matsushita Electric Ind Co Ltd | Blue light emitting diode |
DE3810245A1 (en) * | 1987-03-27 | 1988-10-06 | Japan Incubator Inc | LIGHT-EMITTING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
JPS63288072A (en) * | 1987-05-20 | 1988-11-25 | Seiko Epson Corp | Semiconductor light-emitting device |
JPH01140663A (en) * | 1987-11-27 | 1989-06-01 | Toshiba Corp | Electrode of semiconductor device |
JPH01184977A (en) * | 1988-01-20 | 1989-07-24 | Inkiyuubeetaa Japan:Kk | Visible light emitting semiconductor laser device |
GB2226698B (en) * | 1988-11-15 | 1992-05-20 | Kokusai Denshin Denwa Co Ltd | A light emitting semiconductor device |
US5081632A (en) * | 1989-01-26 | 1992-01-14 | Hitachi, Ltd. | Semiconductor emitting device |
US5028561A (en) * | 1989-06-15 | 1991-07-02 | Hughes Aircraft Company | Method of growing p-type group II-VI material |
US5248631A (en) * | 1990-08-24 | 1993-09-28 | Minnesota Mining And Manufacturing Company | Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals |
-
1992
- 1992-05-12 EP EP92912423A patent/EP0584236B1/en not_active Expired - Lifetime
- 1992-05-12 EP EP95108005A patent/EP0670593A3/en not_active Withdrawn
- 1992-05-12 DE DE69220942T patent/DE69220942T2/en not_active Expired - Fee Related
- 1992-05-12 BR BR9205993A patent/BR9205993A/en not_active IP Right Cessation
- 1992-05-12 ES ES92912423T patent/ES2104931T3/en not_active Expired - Lifetime
- 1992-05-12 CA CA002109310A patent/CA2109310C/en not_active Expired - Fee Related
- 1992-05-12 WO PCT/US1992/003782 patent/WO1992021170A2/en active IP Right Grant
- 1992-05-12 JP JP50007793A patent/JP3269558B2/en not_active Expired - Fee Related
- 1992-05-12 SG SG1996004919A patent/SG46466A1/en unknown
- 1992-05-12 RU RU93058663A patent/RU2127478C1/en not_active IP Right Cessation
- 1992-05-12 AU AU20264/92A patent/AU654726B2/en not_active Ceased
- 1992-05-12 KR KR1019930703441A patent/KR100247682B1/en not_active IP Right Cessation
- 1992-05-14 MY MYPI95003142A patent/MY111574A/en unknown
- 1992-05-14 IL IL10185792A patent/IL101857A/en not_active IP Right Cessation
- 1992-05-14 MY MYPI92000817A patent/MY110622A/en unknown
- 1992-05-15 CN CNB021479372A patent/CN1321488C/en not_active Expired - Fee Related
- 1992-05-15 CN CN92103575A patent/CN1097317C/en not_active Expired - Fee Related
-
1993
- 1993-11-12 FI FI935022A patent/FI110971B/en not_active IP Right Cessation
-
1998
- 1998-01-16 HK HK98100395A patent/HK1001353A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO1992021170A2 (en) | 1992-11-26 |
IL101857A0 (en) | 1992-12-30 |
AU2026492A (en) | 1992-12-30 |
RU2127478C1 (en) | 1999-03-10 |
JPH06508003A (en) | 1994-09-08 |
EP0584236B1 (en) | 1997-07-16 |
CA2109310A1 (en) | 1992-11-16 |
EP0670593A2 (en) | 1995-09-06 |
FI935022A (en) | 1993-11-12 |
WO1992021170A3 (en) | 1993-03-04 |
CN1097317C (en) | 2002-12-25 |
MY111574A (en) | 2000-08-30 |
BR9205993A (en) | 1994-08-02 |
KR100247682B1 (en) | 2000-03-15 |
CN1066936A (en) | 1992-12-09 |
DE69220942T2 (en) | 1998-03-05 |
ES2104931T3 (en) | 1997-10-16 |
IL101857A (en) | 1998-12-06 |
CN1474485A (en) | 2004-02-11 |
AU654726B2 (en) | 1994-11-17 |
CA2109310C (en) | 2001-10-02 |
SG46466A1 (en) | 1998-02-20 |
FI110971B (en) | 2003-04-30 |
EP0584236A1 (en) | 1994-03-02 |
CN1321488C (en) | 2007-06-13 |
JP3269558B2 (en) | 2002-03-25 |
HK1001353A1 (en) | 1998-06-12 |
FI935022A0 (en) | 1993-11-12 |
DE69220942D1 (en) | 1997-08-21 |
EP0670593A3 (en) | 1996-02-07 |
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