MXPA06006523A - Compression system with multiple inlet streams - Google Patents

Abstract

A compressor system comprises (a) a first compressor (43) having a first stage (41) and a second stage (45) wherein the first stage (41) compresses a first gas (3) and the second stage (45) compresses a combination of a fourth gas (9) and an intermediate compressed gas from the first stage (43);and (b) a second compressor (49) having a first stage (47) and a second stage (51) wherein the first stage (47) compresses a second gas (5) and the second stage (51) compresses a combination of a third gas (7) and an intermediate compressed gas from the first stage (47);and (c) piping means (57) to combine the discharge (53) from the second stage og the first compressor and the discharge (55) from the second stage of the second compressor to provide a compressed gas. The second gas (5) is at a pressure higher than the first gas (5), the third gas (7) is at a pressure higher than the second gas (5), and the fourth gas (9) is at a pressure higher than the third gas (7). The system has particular application to multistage refrigeration, especially of LNG.

Description

METHOD AND SYSTEM TO FORM A FILM OF MATERIAL, WITH THE USE OF CHEMICAL REACTIONS ASSISTED BY PLASMON CROSS REFERENCE TO RELATED REQUESTS This application claims the priority of US Provisional Application, Serial No. 60 / 529,869, filed on December 15, 2093, commonly assigned and incorporated herein by reference for all purposes.

DECLARATION IN ACCORDANCE WITH THE RIGHTS OF THE INVENTIONS MADE UNDER INVESTIGATION OR DEVELOPMENT SPONSORED FEDERALLY Not Applicable.

BACKGROUND OF THE INVENTION The present invention is directed to the process of materials and, in particular, to micro and nano-structures and their applications. More particularly, the present invention provides methods and the resulting structures for forming nano- and micro-structures, which use a deposition technique for a wide variety of applications. As merely an example, these deposit techniques can be applied to the formation of one or more films in the manufacture of electronic devices, such as integrated circuits. It will be recognized that the invention has a much wider range of applicability. The present invention can be used for engraving, improving guiding reactions, and the like. Additionally, the invention can be applied to several fields, including life sciences, chemistry, petrochemistry, electronics and others. Over the years, icroelectronics has proliferated in many aspects of modern day life. In the first studies, Robert N. Noyce invented the integrated circuit, which is described in "Semiconductor Device and Guide Structure", according to U.S. Patent No. 2,981,877. Integrated circuits developed from a few electronic elements in millions and even billions of components, made from a small slice of silicon material. Such integrated circuits have been incorporated into and controlled many conventional devices, such as automobiles, computers, medical equipment and even children's toys. Conventional integrated circuits provide performance and complexity far beyond what was originally imagined. In order to achieve improvements in complexity and circuit density (ie, the number of devices capable of being packed in a given microcircuit area), the size of the smallest device characteristic, also known as "geometry" , has become smaller with each generation of integrated circuits. The increasing density of circuits has not only improved the complexity and performance of integrated circuits, but has also supplied parts with a lower cost to the consumer. The manufacturing facility of an integrated circuit or a microcircuit can cost hundreds of millions or even billions of US dollars. Each manufacturing facility will have some wafer prtion, and each wafer will have a number of integrated circuits in it. Therefore, by making the individual devices of a smaller integrated circuit, larger devices can be manufactured on each wafer, thereby increasing the prtion of the manufacturing facility. Making smaller devices is a challenge, since every process used in integrated manufacturing has a limit. That is, a given process typically only works below a certain characteristic size and then the device disposition process needs to be changed. ' Additionally, as a device requires more and faster designs, there are process limitations with certain conventional processes and materials.

An example of such a process is the chemical vapor deposition, commonly called CVD. More particularly, CVD has been considered as one of the most cost effective means of high prtion, high quality deposit of thin films for the manufacture of electronic devices, optoelectrics and MEMS. In a conventional CVD reactor, for example, the vaporized liquid precursors are in contact with a heated substrate, and the deposit is the result of chemical reactions, which occur at or very close to the surface of the heated substrate. The composition of the deposit depends on the chemical precursors and the reactor environment. For example, by using a titanium precursor, one can produce a metallic titanium film on the substrate, or with a suitable partial pressure of oxygen in the reactor, a Ti02 film, titania, can be formed. To form electronic circuits, CVD is often used with lithographic processes. For example, a film of material is deposited with the CVD. The structures are recorded from the movie. The deposit of each process can be repeated to form complex structures. Other CVD techniques have also been proposed. An example of such a CVD technique is laser-assisted CVD. Unlike conventional CVD, where all the substrate is heated, the laser-assisted CVD (LCVD) uses a focused laser to locally heat a sticky zone on the substrate at suitable CVD reaction temperatures. Typical sizes of laser zones are of the order of several microns. Due to localized heating, the reaction path in the vapor is three dimensional, and the growth regimes are several orders of magnitude higher than the traditional CVD. The LCVD growth regimes of 5 to 20 microns / second are often typical. However, laser zones often provide a high-power laser source, which is not efficient and expensive. By moving the focus of the beam, it is possible to write lines, points and bars. Although CVD and LCVD have some success, many limitations still exist. That is, the width of lines associated with these processes often can not be less than a predetermined amount, that is, the diffraction limit of the light. Additionally, film quality often degrades as line widths become smaller. These and other limitations will be described in greater detail through the present specification and more particularly below. From the above, it will be seen that an improved technique for the materials process is convenient.

BRIEF COMPENDI OF THE INVENTION According to the present invention, techniques directed to the process of materials and, in particular to micro or nanostructures and their applications are provided. More particularly, the present invention provides methods and structures resulting in the formation of nano- and micro-structures, which use a deposition technique for a wide variety of applications. As merely one example, such deposition techniques can be applied to the formation of one or more films in the manufacture of electronic devices, such as integrated circuits. It is recognized that the invention has a much greater range of applicability. The present invention can be used for etching, improvement of chemical reactions, and the like. Additionally, the invention can be applied in various fields that include the life sciences, chemistry, petrochemistry, electronics and other. We understand that many methods of synthesis of materials often require energy in the form of heat. As an example, the guimic vapor deposit is a common technique for the synthesis of materials. Such methods often apply the heat generated by photoelectron interactions in nano-sized structures, as a source of heat for such chemical vapor deposits. In particular, the invention includes the use of selected frequencies and / or frequency ranges of electromagnetic radiation, in the form of light, to control the relative temperature of nano-sized particles whereby the material is synthesized. Preferably, the present invention also allows the use of simple light sources, such as laser and conventional optics, to selectively heat structures with substantially lower power densities than would otherwise be possible with other techniques, in accordance with a specific modality. It allows the spatial control of the reactions of synthesis of materials in the nanometric scale in certain modalities. It also allows a high degree of temporal control of the temperature of the synthesis process. These and other features will be described through the present specification and more particularly below. In a specific embodiment, the present invention provides a method for forming a film of material, which uses chemical vapor deposition, assisted by plasmon, or a similar process. The method includes providing a substrate, which has a surface region. Preferably, the substrate is a silicon wafer, Group III / V materials, silicon on an insulator, germanium, quartz, virio or other multiple layer materials, and the like. The method includes forming one or more particles (eg, metallic, semiconductor, organic, insulator) that are placed on a portion of the surface region. Preferably, this one or more particles have a thermal characteristic, for example the ability to maintain a thermal gradient between the particles themselves and the surrounding environment. Preferably, the particles are strong absorbers of radiation incident by the excitation of the plasmon or the like (much stronger than the surrounding medium, so the radiation is absorbed more strongly by an amount determined by the particles than the surrounding medium), according to a specific modality. Therefore, the particles can be heated relative to the surrounding medium. The strongest absorption can be quantified by the application of Maxwell's equations, which govern the behavior of electromagnetic radiation, to the particles and the surrounding medium. In particular, the application of Maxwell's equations to be disseminated from small particles can be found in Mie's theory and its extensions (where the terms of Mie's theory without explicit recitation of its extensions, as described here, they will include their extensions according to a specific modality), and this theory can be used to characterize the absorption of electromagnetic energy by the particles.

The effect of absorption can also be measured empirically by spectroscopy. The method includes applying a reactive species (e.g., any reactive or compound element, gas, liquid, solid) within a neighborhood of one or more particles and irradiating this one or more particles with electromagnetic radiation (e.g., a laser source, another source). of energy) that has a frequency and / or preselected frequency ranges. The method includes increasing the temperature of one or more particles having the thermal characteristic to at least one selected temperature (e.g., the reaction temperature) from an influence of at least the electromagnetic radiation having the preselected frequency. The method causes a chemical reaction of the reactive species from at least the increase in temperature of one or more particles, to initiate the formation of a film of material from the reactive species. In a specific modality, the term "particle" or "particles" can form a preexisting structure with a certain spatial and geometrical configuration, which we call a "preform", according to a specific modality. In an alternative specific embodiment, the present invention provides an alternative method for using a chemical reaction using electromagnetic radiation. The method includes providing one or more particles. Preferably, one or more particles have a thermal characteristic. The method includes applying a reactive species within a neighborhood of one or more particles, and irradiating this one or more particles with electromagnetic radiation, which has a preselected frequency. This method includes increasing the temperature in one or more particles, which have the thermal characteristic of at least one temperature selected from an influence of at least electromagnetic radiation, having the preselected frequency and using a chemical reaction of reactive species of at least the increase in the temperature of one or more particles, to initiate the formation of a material of the reactive species. In a specific embodiment, the term "particle" or "particles" can form a preexisting structure with a particular spatial and geometric configuration, which will be called a "preform" according to a specific modality. In still an alternative embodiment, the present invention provides a method for processing materials that use chemical reactions. In a specific embodiment, the method provides the deposit of material, initiating a chemical reaction, which uses the heating of particles (for example the preform) by means of electromagnetic radiation. The method includes irradiating one or more particles with a source of electromagnetic radiation, the source of electromagnetic radiation having a predetermined frequency. The method includes causing an increase in thermal energy in a portion of one or more of the particles to raise a local temperature in the portion of one or more particles. The increase in thermal energy is sufficient to initiate a chemical reaction of one or more species within a neighborhood of the portion of one or more particles. In a specific modality, the term "particle" "particles" can form a preexisting structure with a specific spatial and geometric configuration, which we call a "preform", according to a specific modality. Still further, the present invention provides a method for forming a film of material, which uses the chemical vapor deposit. This method includes providing a substrate comprising a pad (for example the preform) of at least one metallic nanostructure, which is made of a selected material. The method includes determining a resonant frequency of the plasmon of the material selected from the nanostructure and exciting a portion of the selected material using an electromagnetic source having a predetermined frequency of the resonant frequency of the plasmon., to cause an increase in the thermal energy of the selected material. The method includes applying one or more chemical precursors on the substrate, which include the selected material excited at the resonant frequency of the plasmon and causing the selective deposit of a film on at least the portion of the selected material. Depending on the embodiment, the present invention also provides one or more of the following features, which will be described through the present specification and, more particularly, below. 1. The present invention provides a method that uses plasmon excitation in metal nanostructures, as a means of creating local temperature profiles or inducing localized heating, which is sufficient to initiate chemical reactions, according to a specific embodiment. 2. The excitation of the plasmon in metal nanostructures to locally heat a preform, which includes the metal nanostructures on a substrate in a CVD reactor, according to a specific modality, is also included. A brief sequence of stages can be provided as follows: a. Develop a model of metallic nanostructures (which we lick a preform), such as a regular arrangement of gold particles, by any effective means, including, but not limited to, electron beam lithography and nano-printing or alternatively provide a substrate in which a pattern of metallic particles (eg a regular array, random dispersion or any arrangement (ie the preform) has been formed b) Calculate the resonant frequency of the plasmon (e.g. frequency) for a given material, spacing, particle size, etc. c) Use the light source in the appropriate frequency range to induce heating in the nanostructures can be achieved, for example, by sweeping a source of laser focused through the substrate or designing a diffuse source, which can excite all metal particles simultaneously d) Carry out stage (c) inside a r CVD actuator, so that the vaporized chemical precursors are in contact with the heated substrate, and the deposit results in a pattern determined by the preform. The actual material deposited depends on the chemical precursors and other details of the environment. 3. The CVD based on the plasmon, for the creation of structured ferroelectric films, according to a specific alternative modality, is also included. 4. Specific applications, such as any DV process can now be used with better spatial control than in conventional CVD reactors. Also, better control of the process can also be achieved, by controlling the light source, because the heating is induced more quickly and also dissipates very quickly. Preferably, the pattern of the reservoir is controlled by a pattern of the underlying preform and the manner in which the electromagnetic radiation is used to generate the heating effect in the preform, according to a specific embodiment. Depending on the modality, one or more of these characteristics may be included. Of course, an ordinary expert in the art will recognize that many variants, modifications and alternatives are possible. Many benefits are achieved by means of the present invention over conventional techniques. For example, the present technique provides a user-friendly process, which depends on conventional technology. In some embodiments, the method provides higher performances of the device in the trogueles per wafer. Additionally, the method provides a process that is compatible with conventional process technology, without substantial modifications to conventional equipment and processes. Preferably, the invention provides an improved process integration for design rules of tens of nanometers and less. Additionally, the invention can provide selective film formation of line widths, ranging from about half miera and less to less than one nanometer, depending on the modality. Also, the present invention includes methods and resulting structures that can be implanted using very narrow controls compared to conventional process techniques, such as chemical vapor deposition, according to preferred embodiments. Still further, the present invention provides a method and the resulting structure, wherein the plasmon-assisted treatment initiates the formation of a film of material with control over the resulting film in a preform. This film has a geometry similar or the same as the preform and the electromagnetic radiation used to excite the preform is provided using the selected temporal control, according to a specific modality. Depending on the modality, one or more of these benefits can be achieved, said benefits and others will be described in greater detail in the present specification and more particularly below.

Various objects, features and additional advantages of the present invention can be more fully appreciated with reference to the following detailed description and the accompanying drawings which follow.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a simplified flow diagram of a deposit method, according to one embodiment of the present invention; Figures 2 to 4 are simplified cross-sectional views of a deposit method, according to one embodiment of the present invention; Figure 5 is a simplified flow chart of an alternative deposit method, according to an embodiment of the present invention; Figures 6 to 8 are diagrams in a simplified cross-sectional view of the alternative deposit method, according to one embodiment of the present invention; Figures 9 to 11 are simplified diagrams of an apparatus according to an embodiment of the present invention; Figures 12 to 14 are illustrations of processes associated with examples according to one embodiment of the present invention;; Figures 5 to 19 are illustrations of processes associated with the examples in accordance with alternative embodiments of the present invention; and Figure 20 is a simplified projection of gold nanoparticle extinction spectra versus energy, according to a specific embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION According to the present invention, the techniques directed to the process of materials and, in particular, directed to mico or nano-structures and their applications, are provided. More particularly, the present invention provides methods and resulting structures for forming nano- and micro-structures using the deposition technique for a wide variety of applications. As merely an example, such deposition techniques can be applied to the formation of one or more films in the manufacture of electronic devices, such as integrated circuits. But it will be recognized that the invention has a wider range of applicability. The present invention can be used to burn, improve chemical reactions and the like. Additionally, the invention can be applied in several fields, including life sciences, chemistry, petrochemistry, electronics and others. A method for manufacturing a film using the plasmon resonant frequency process, according to one embodiment of the present invention, can be delineated as follows. 1. Provide a substrate, which has a surface region: 2. form one or more particles (which have thermal characteristics) covering a portion of the surface region (or by providing a substrate having one or more particles superimposed (or embedded in) (e.g., the preform), a portion of the surface region replaces the previous steps 1 and 2. 3. applying a reactive species within a vicinity of one or more particles 4. irradiate this one or more particles with electromagnetic radiation, which has a preselected frequency, in a selected spatial region 5. increase the temperature of one or more particles, which have the thermal characteristic, to when a selected temperature, of an influence of at least the electromagnetic radiation, having the preselected frequency; 6. causing a chemical reaction of the reactive species from at least the increase in temperature in one or more particles, to initiate the formation of a film of material from the reactive species; and 7. perform other steps, as desired.

The above sequence of steps provides a method for forming a film of material, according to an embodiment of the present invention. As shown, the method uses a combination of steps, including a way to form a film of material, where the electromagnetic radiation and one or more particles superimposed on the surface region. Other alternatives can also be provided, where the stages are added, one or more elimination stages, or one or more stages are provided in a different sequence, without departing from the scope of the present claims. Other details of the present method can be found through the present specification and more particularly below. Figure 1 is a simplified flow chart of a deposit method, according to one embodiment of the present invention. This flow chart is merely an illustration and should not unduly limit the scope of the present claims. An ordinary expert in the art will recognize many variant, modifications and alternatives. Figures 2 to 4 are diagrams of simplified cross-sectional views of a deposit method, according to one embodiment of the present invention. These diagrams are merely examples, which should not unduly limit the scope of the present claims. An ordinary expert in the art should recognize many variants, alternatives and modifications. As shown, the method begins with the start, step 101, which provides a method for forming a film of material using chemical vapor deposition, assisted by plasmon, or similar processes. The method includes providing a substrate (step 103) 200, which has a surface region 201, which is illustrated in Figure 2. Preferably, the substrate is a silicon wafer. Other types of substrate include conductive materials, insulating materials, other semiconductor material, multilayer materials and the like. Conductive materials may include, but are not limited to, altered semiconductor materials, altered glass, metals and other suitable materials. The insulating materials include, but are not limited to, glass, quartz, ceramic and any oxide or nitrides or other materials with insulation characteristics, for example thermal or electrical. Semiconductor materials include, but are not limited to, silicon, germanium, Group III / V elements and others. The surface region can be flat, shaped or any combination of them. The surface region can form a pattern or be free of any pattern. Optionally, the method maintains the substrate at a predetermined temperature. Preferably the predetermined temperature is below a reaction temperature of one or more particles and reactive species, which will be described in more detail below. Of course, an ordinary expert in the art will recognize many variations, modifications and alternatives. The method includes forming (step 105) one or more particles 301 on a portion of the surface region and / or providing a substrate of metal particles, which has a preform thereon, and / or embedded within a portion of the substrate, according to a specific modality. Preferably, this one or more particles have a thermal characteristic, for example surface activation energy. This one or more particles form a layer of one or more materials. The one or more particles serve as a precursor to form a film of material. In a specific embodiment, this one or more particles may be of a semiconductor material, an insulator material, a metal, an organic material or any combination thereof. Preferably, this one or more particles are of a metallic material. The metallic material can be selected from the group of (Au), copper (Cu), silver (Ag), titanium (Ti), aluminum (Al), palladium (Pd), platinum (Pt), rhodium (Rh) gone (In ) iron (Fe), tungsten (W), niguel (Bi), and other metals listed in the Periodic Table, any combination of them, and the like. In a specific embodiment, this one or more particles is characterized by a length of one nanometer to about 100 nanometers, although other dimensions may also exist. This one or more particles may also include a single particle, multiple particles, cords of particles, which include wire and any combination of them. The particles can form a pattern or also be free of patterns on the surface of the substrate. Of course, an ordinary expert in the art will recognize many variants, alternatives and modifications. The method includes applying a reactive species 303 (or step 107) within a neighborhood of one or more particles, as illustrated in Figure 3. Preferably, the reactive species is on and in contact with the particulate film. Reactive species form a chemical reaction with this one or more particles, at a given or selected temperature. Temperature is an activation energy associated with a reaction between one or more particles and reactive species. The activation energy is a minimum level of energy required to initiate the reaction to form a product, which is for a film of material. In a specific embodiment, the reactive species are in gaseous form, liquid form, a plasma, solid form or any combination thereof. Preferably, the electromagnetic energy is used to initiate the reaction, as will be described more specifically below. The method includes irradiating 404 (step 111) this one or more particles with electromagnetic radiation, which is characterized by one or more frequencies previously selected, reference is made to Figure 4. The electromagnetic radiation may be from a source with pattern or flood. Electromagnetic radiation can be obtained from a laser source, such as HeNe, argon, carbon dioxide, any suitable lamp, which is in pattern or flooding, solar energy, and the like. Preferably, the preselected frequency varies from about 200 to about 30,000 nm, depending on the specific mode. The method includes increasing (step 115) a temperature of one or more particles, which has a thermal characteristic at least one temperature selected from an influence of at least the electromagnetic radiation having a preselected frequency. In a specific embodiment, the influence is a resonance effect and / or photon-electron interaction of one or more particles, which causes (step 117) a chemical reaction of the reactive species of at least the increase in temperature of one or more particles, to start the formation of a film of reactive species material. In a preferred embodiment, the increased temperature causes the start of the reaction, since the activation energy associated with the reaction has been exceeded in the spatial region associated with one or more particles and / or preform structures. Other spatial regions outside the preform are kept below the activation energy and can not initiate the chemical reaction, which keeps such regions free of any film formation of the material according to a specific embodiment. In a preferred embodiment, the method forms the film of material at a selected thickness. Depending on the modality, other steps, for example, step 212, may be included. The method is stopped at step 123. The above sequence of steps provides a method for forming a film of material, according to one embodiment of the present invention. As shown, the method uses a combination of steps including the manner of forming a film of material that uses electromagnetic radiation and one or more particles that cure a surface region. Other alternatives may also be provided, when stages are added, one or more stages are eliminated, one or more stages are provided in a different sequence, without departing from the scope of the present claims. As merely one example, the present invention provides an alternative method for causing a chemical reaction using electromagnetic radiation, which is somewhat similar to the previous embodiment. The method includes providing one or more particles. Preferably, this one or more particles have a thermal characteristic. The one or more particles may be provided on a substrate, within a substrate or within a fluid medium. This fluid medium can be a liquid, a gas or a vapor, or any combination of them, depending on the modality, The liquid can be an organic material, a petroleum-based material, a metal, and a fluid such as water , which includes pure water, salts, etc. The gas can be an organic material, a petroleum-based material, or a water-based material, a non-reactive material, an inert gas (for example nitrogen, argon), air (for example oxygen, nitrogen). They carry a material rich in oxygen, any combination of them and the like. The vapor can be organic, a petroleum-based fluid, a non-reactive environment, any combination of them, and the like. Of course, it can also be any combination of the above and other materials. Next, the method includes applying a reactive species within a neighborhood of one or more particles, and irradiating this one or more particles with electromagnetic radiation, which has a preselected frequency. The method includes increasing the temperature of one or more particles, which have the thermal characteristic at least one temperature selected from an influence of at least the electromagnetic radiation, which has the preselected frequency. The method includes causing the chemical reaction of the reactive species of at least the increase in temperature of one or more particles to initiate the formation of a material from the reactive species. Alternatively, the electromagnetic radiation can be provided in the reactive species to initiate the formation of a material, alternatively, the electromagnetic radiation can be provided in the reactive species and the one or more particles, to initiate the formation of the film, which depends on the specific modality. Of course, an ordinary expert in the art will recognize other variants, modifications and alternatives.

The above sequence of steps provide a method for forming a film of material, according to an embodiment of the present invention. As shown, the method uses a combination of steps, including a manner of forming a film of material using electromagnetic radiation and one or more particles on a surface region or within a fluid, solid or any combination thereof. Other alternatives may also be provided, where the stages are added, one or more stages are eliminated, or one or more stages are provided in a different sequence, without departing from the scope of the present claims. other methods, according to the embodiments of the invention, may be provided through the present specification and more specifically below. A method for forming a film of material using the chemical vapor tank, according to one embodiment of the present invention, will be delineated as follows: 1. Providing a substrate, which comprises a pattern of at least one metallic nanostructure, which It is made of a selected material; 2. determine a resonant frequency of the plasmon, of the material selected from the nanostructure; 3. Excite a portion of the selected material, using an electromagnetic source, which has a predetermined frequency at the resonant frequency of the plasmon; 4. cause an increase in the thermal energy of the selected material; 5. apply one or more chemical precursors on the substrate, which include the selected material, excited at the resonant frequency of the plasmon; 6. cause the selective deposit of a film on at least the portion of the selected material; and 7. perform other stages, when desired. The above sequence of steps provides a method, according to one embodiment of the present invention. Other alternatives may also be provided where other steps are added, one or more stages are eliminated or one or more stages are provided in a different sequence, without departing from the scope of the present claims. Other details of the present method can be found through the present specification and, more particularly, below. Figure 5 is an exemplified flow chart of an alternative deposit method, according to an embodiment of the present invention; . This diagram is merely an example that will not unduly limit the scope of the present claims. One of ordinary skill in the art will recognize that many variations, alternatives and modifications can be made. Figures 6 to 8 are diagrams of simplified cross-sectional views of an alternative deposit method, according to an embodiment of the present invention; . These diagrams are merely examples, which will not unduly imitate the scope of the present claims. As shown, when the simplified flow chart of Figure 5, the present method 500 provides a method for forming a film of material using the chemical vapor tank, which starts at the start, step 501. The method includes providing ( step 503) a substrate 601 of a selected material, preferably the substrate is a silicon wafer. Other types of substrates include conductive materials, insulating materials, other semiconductor materials, multilayer materials and the like. Conductive materials may include, but are not limited to any of the aforementioned, as well as outside of the specification. Insulating materials include, but are not limited to, any of the aforementioned herein, as well as outside of the specification. The semiconductor material may include silicon, germanium, any material of Group III / V, and any combination thereof, and the like, as well as other aforesaid references. The metallic material can be selected from gold (Au), copper (Cu), silver (A), titanium (Ti), aluminum (Al), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), iron (Fe), tungsten (), nickel (Ni) and other metals listed in the Periodic Table, any combination thereof, and the like. In a specific embodiment, the patterned nanostructure is characterized by a stretch from one nanometer to about 100 nanometers, although other dimensions may exist. Optionally, the method keeps the substrate and nanostructure patterned at a certain re-determined temperature. Preferably, this predetermined temperature is below a reaction temperature of the patterned nano-structure with reactive species which will be described in more detail below. Of course, an ordinary expert in the art will recognize many variations, modifications and alternatives. The method includes determining (step 505) a resonant plasmon frequency of the material selected from the nanoe structure. In a specific modality, the resonant frequency of the plasmon is a frequency at which there are collective oscillations of the conductive electrons. As an example, the resonant frequency of the plasmon can be derived from the Theory of Me, if the optical properties of the particles and the surrounding media are known. It is also necessary for complicated structures, to know the geometry and / or the arrangement of particles. The resonant frequency of the plasmon can also be measured empirically by spectroscopic methods. Of course, an ordinary expert in the field can also recognize other variations, modifications and alternatives. Additionally, such definition or should be construed as unduly limiting the scope of the present invention. Next, the method includes exciting (step 507) a portion of the selected material, using an electromagnetic source 701, which has a frequency determined prior to the resonant frequency of the plasmon, as illustrated by the simplified diagram of Figure 7. The radiation Electromagnetic can be from a pattern or flood source. The electromagnetic radiation can be derived from a laser source, such as HeNe, Ar ++ or a laser diode among others. Preferably, the preselected frequency varies from about 200 nm to about 30,000 nm, depending on the specific mode. Note that continuous-energy lasers (CW) may be preferable to pulsed lasers. Of course, there may be other variations, modifications and alternatives. The method includes causing an increase (step 509) in the thermal energy of the selected material, which is associated with the electromagnetic energy at the selected frequency.

This thermal energy is associated with an energy activation of the selected material and one or more chemical precursors. Preferably, the thermal energy is also associated with a specific reaction temperature of the selected material and this one or more guimic precursors to form a film of material. As will be described, the method includes the application (tea 511) of one or more chemical precursors 703, which is superimposed on the substrate including the selected material, excited at the resonant frequency of the plasmon, to cause selective deposition (step 513) of a film 801 that overlaps at least the portion of the selected material. Depending on the modality, there may also be other stages. The method is stopped at step 515. Of course, there may be other variations, modifications and alternatives. The above sequence of steps provides a method for forming a film of material, according to an embodiment of the present invention. As shown, the method uses a combination of stages, including a way to form a film of material, which uses electromagnetic radiation, and a metallic nanostructure with a predefined pattern that covers a substrate. Other alternatives may also be provided, where stages are added, one or more stages are submitted or one or more stages are provided in different sequenced, without departing from the scope of the present claims. As merely one example, the present invention provides an alternative method for processing a film of material. The method includes irradiating one or more particles with a source of electromagnetic radiation, this source of electromagnetic radiation has a predetermined frequency. The method includes causing an increase in thermal energy in a portion of one or more of the particles, in order to raise a local temperature in the portion of one or more particles, the increase in thermal energy is sufficient to initiate a guímic reaction of a or more species within a neighborhood of the portion of one or more particles. Of course, there may be other variations, modifications and alternatives. The above sequence of steps provides a method, according to one embodiment of the present invention. Other alternatives may also be provided, wherein stages are added, one or more stages are removed, or one or more stages are provided in a different one. sequence, without departing from the scope of the present claims. Other details of a system, according to one embodiment of the present invention, can be found through the present specification and more particularly below.

Figures 9 to 11 are simplified diagrams of an apparatus according to an embodiment of the present invention. These diagrams are merely examples, which will not unduly limit the scope of the present claims. An ordinary expert in the art will recognize many variations, alternatives and modifications. Referring to Figure 9, the present invention provides an apparatus 900 for processing a substrate according to an embodiment of the present invention. As shown, the apparatus includes a sample stage 901, which has a sample thereon. The sample stage is often a stage X-Y and / or X-Y-Z, depending on the specific mode. The sample stage is maintained in the chamber 802. Depending on the mode, the chamber can be coupled to a vacuum pump 905 to create a vacuum environment. Alternatively, the chamber can be maintained at atmospheric or high pressure, or any combination thereof, depending on the mode. The apparatus includes a source of electromagnetic radiation, such as a source of LASER 909, according to a specific embodiment. Depending on the modality, the source of LASER may be argon, helium, carbon dioxide, and others, which include non-LASER sources, or any combination thereof. The laser source is coupled to the 911 polarizer, which is coupled to the shutter 913, which mechanically and optically locks the LASER beam and / or allows the LASER beam to cross over to the 915 mirror. This LASER beam crosses through the 917 microscope and focuses through a 921 collimator. towards a portion of a characteristic of a sample, depending on the modality. In a specific embodiment, the microscope is coupled to a device that captures images 919. Preferably, this image-capturing device is a camera of a charge coupled device (CCD) or the like, depending on the modality. In a specific modality, the CCD camera includes at least 160 x 120 pixel elements or more of high resolution. The CCD camera is coupled to a 923 video monitor, which includes a display and computing device, according to a specific modality. Also shown is a computer system 1010, which is used to check the device, according to a specific modality. Figure 10 is a simplified diagram of a computer system 1010, which is used to review the system of Figure 9, according to one embodiment of the present invention. This diagram is merely an example, which does not unduly limit the scope of the present claims. An ordinary expert in the art will recognize many other modifications, alternatives and variations. As shown, the computer system 1010 includes a display device 1020, display screen 1030, cabinet 1040, keyboard 1050, scanner, and mouse 1070. The mouse 1070 and the keyboard 1050 are representative of the "user input devices" . This 1070 mouse includes 1080 buttons for the choice of buttons in a graphical user interface device. Other examples of user input devices are a touch screen, light pen, track ball, data setting, microphones, etc. The system is merely representative of a type of system for incorporating the present invention. It is readily apparent to one of ordinary skill in the art that many types of systems and configurations are capable of being used in conjunction with the present invention. In a preferred embodiment, the computer system 1010 includes a computer based on the Pentium ™ class, a system operating with Windows ™, NT or X _ ^ _ by Microsoft Corporation. However, the system is easily adapted for other operating systems and arguments, by those skilled in the art, without departing from the scope of the present invention. As noted, the mouse 1070 may have one or more buttons, such as the 1080 buttons. The 1040 cabinet hosts familiar computer components, such as disk drives, a processor, storage device, etc. Storage devices include, but are not limited to, disk drives, magnetic tapes, solid state memory, bubble memory, etc. The cabinet 1040 may include additional hardware (equipment), such as input / output interface cards, for connecting the computer system 1010 to external devices, external storage, other computers or additional peripheral elements, which are described below. Figure 11 is a more detailed diagram of the hardware elements in the computer system of Figure 10, according to one embodiment of the present invention. This diagram is merely an example, which will not unduly limit the scope of the present claims. An ordinary expert in the art will recognize many other modifications, alternatives and variants. As shown, basic subsystems are included in the computer system 1010. In specific embodiments, the subsystems are interconnected by means of a collector 1075 of the system. Additional subsystems, such as a printer 1074, keyboard 1078, fixed disk 1079, monitor 1076, which are coupled to display adapter 1082 and others, are shown. Peripheral elements and input / output devices (I / O), which are coupled to the input / output controller 1071, can be connected to the computer system by any number of means known in the art, such as the serial port 1077. For example, serial port 1077 can be used to connect the computer system to a modem 1081, which, in turn, is connected to a wide area network, such as the Internet, a mouse input device or a scanner The interconnection by means of the system collector allows the central processor 1073 to communicate with each subsystem and to control the execution of instructions from the system memory 1072 or the fixed disk 107, as well as the exchange of information between subsystems. Other system arrangements and interconnections are easily achieved by ordinary experts in the field. System memory and fixed disk are examples of tangible means for storing computer programs, other types of tangible media include diskettes, removable hard disks, optical storage media, such as ROM and bar codes, and semiconductor memories such as a volatile memory, read only memories (ROM) and memory supported by matter. In a preferred embodiment, the present invention provides a system for forming a film of material, which uses chemical vapor deposition, or other processes, such as etching and the like. The system has one or more memories with several computer codes to carry out the functionality described herein. The system has a code directed to the transfer of a substrate comprising a pattern of at least one metallic nanostructure, this metallic nanostructure comprising a selected material, inside a chamber. The system has a code intended to excite a portion of the selected material using an electromagnetic source having a predetermined frequency of a plasmon resonant frequency of the selected material to cause an increase in the thermal energy of the selected material, the system also has a code directed to apply one or more chemical precursors that are superimposed on the substrate, which include the selected material excited from the plasmon resonant frequency, to cause the selective deposition of a film on only the selected portion of the material, while keeping other regions of the substrate free of deposits. Depending on the modality, there may be other variants, modifications and alternatives. Although the above has been illustrated in terms of the characteristics of a specific hardware, it must be recognized that many variants, alternatives and modifications can be carried out. For example, any of the hardware features can be combined or even separated. The features can also be realized in part, through the software (program) or a combination of the hardware (eguipo) and software (program). This hardware and software can also be integrated or less integrated, depending on the application.

EXAMPLES In order to test the principles and operation of the present invention, we have provided examples of the invention in a gum vapor deposition medium. Such examples are merely illustrative and should unduly limit the scope of the present claims. An ordinary expert in the art will recognize many variations, modifications and alternatives. As basic information we have provided certain information associated with conventional chemical vapor deposition and its application associated with the present method and systems. One of our goals in this CVD research is to control the nanostructure locally. Ferroelectric materials are highly suitable for non-volatile memory applications. However, there are challenges with the uniform fabrication and nano-scale arrangement of the ferroelectric material. Conventional CVD only provides the random deposit process and, therefore, is limited. In the present example, instead of focusing a laser to locally heat the substrate, as in the LCVD, the bore located in the middle of the CVD is induced in metallic nanostructures, such as a particle, a wire, or array of them, over a substrate, by exciting a plasmon resonance in these structures. A plasmon resonance occurs when light waves interact with electrons not located in the metal, and the resonant frequency, a substantial portion of the incident energy of light is absorbed by the particles that cause the heating. Suitable temperatures for the growth of CVD can be achieved with modest light intensities. A schematic form of the process is shown in the Figure 12. The incident light (green arrows) excites a plasmon resonance in a metallic nanoparticle array (red) on a substrate in a CVD environment, the particles heat up and the deposit (dark green) occurs only on the heated particles . (The bottom is an expanded view.) It is also possible to grow in complex three-dimensional metallic structures, such as a helical wire, Figure 113. The use of metallic underlying structures is advantageous for ferroelectric materials due to the underlying metal that can act as a necessary electrode. . It would be possible to deposit a capacitor device (metal-dielectric-metal) in a single growth process without etching, Figure 14. Further examples of methods according to the present invention can be found below. In yet an alternative example, we have formed several nanostructures that use chemical vapor deposition techniques. We have shown that the CV of Ti02, directly on Au nanoparticles of 10, 20 and 40 nm. Of course there may be other variations, modifications and alternatives. To our knowledge, this is the first application of plasmon heating to CVD and is applied to the name of plasmon-assisted CVD (PACVD). The laser power density for the deposits was several orders of magnitude lower than the conventional laser-assisted CVD. The nanoparticles with diameters of 10, 20 and 40 nm were deposited from a solution to a Si wafer, as shown in Figure 15. SEM images of the particles were deposited. Deposits with random densities of around 100 particles per μm2. These wafers are placed in our CVD reactor, as shown above, but they may be others. The precursor was Ti [(OCH (CH3) 2] 2 [C ??H ?g02] 2, which was chosen because of its high vapor pressure at relatively low temperatures.

The plasmon resonance of the Au particles of 20 nm, on a Si wafer, is 640 nm. (It should be noted that the thin native layer of Si02 was not removed). A HeNe laser beam was focused with a 10X microscope objective to a zone size of about 10 μm. The sample cell was mounted in a XY translation stage, controlled by computer. The laser power was varied from 10 to 100 / AW by adjusting a rotary polarizer in the beam path. An electronic shutter was also placed in the path of the beam to control the exposure. A LabView program controlled the position, exposure and laser power and recorded the temperatures of the bubbler and the cell, and the cell pressure. A grid of 500 exposure areas was reda with a growing exposure time left to write and increase the laser power from the top to the bottom. The partial pressures of the precursor Ti [(OCH (CH3) 2] 2 {CnH1902] 2 and oxygen were taken from the LCVD literature.The bubbler was maintained at 130 ° C and a small amount of Ar flowed to reach a pressure of 1.5 milli-bars in the cell A flow of 02 increased the cell pressure and exposure The deposit interval in the size of the micro to nanometer scale is shown in Figure 16 SEM images of the deposits of The micrometric size of the first 20 nm Au particle operation is presumably where the exposure and power were high and the micron size characteristics are not unreasonable, the beam area is -10 μm and the Ti02 It has a negligible absorption at 632 nm and a high thermal conductivity.Raman spectroscopy verified that many of the characteristics are truly of Ti02 in the forms of anastase and rutile, while some of the deposits are believed to contain a mixture of Ti02 and the unreacted precursor. In this example, we observe deposits that are bars of 10 μm in diameter and 40 μm in height. Figure 17 shows a nano-scale deposit in similar particles of 20 nm, with a presumably lower power and exposure. Figure 18 shows the nano-scale deposition in Au particles of 40 nm. Figure 10 shows a range of nanoscale deposits in Au particles of 10 nm. Therefore, we have verified certain methods using the previous examples, in accordance with the embodiments of the present invention. These examples are merely illustrations and should not imitate the scope of the present claims. An ordinary expert in the art will recognize many variations, modifications and alternatives. Depending on the specific modality, there may be pronounced warming effects of certain interactions. There are pronounced heating effects of the photon-electron interactions in the nanoparticles, compared to the volume of the structures. The temperature of a metal is related to the average kinetics of the conduction electrons, and the incident electromagnetic radiation will cause oscillations of electrons in the surface region of a metal, thus increasing the average kinetic energy. This kinetic energy of the surface electrons is finally transferred in a somewhat random way to the electrons outside the surface, the volume of electrons. This is the basis of radiation heating. However, if the electromagnetic radiation is at the resonance frequency of the plasmon, there will be collective oscillations or a resonance of the surface electrons, and the heating will be maximized. It is not possible to excite such resonance in the volume of electrons, which dominate the macroscopic structure. A non-resonant frequency of light will cause warming; however not as efficiently as using the resonant frequency. As the size of the structures decreases, there is an increase in the surface to volume ratio, which is proportional to I / R, where R is the radius of the particle. Nanoparticles, in particular, have high surface to volume ratios so that there is a greater number of surface electrons in relation to the electrons in volume. It is generally believed that this accounts for the efficient heating of the nanoparticles by electromagnetic radiation at the resonance frequency of the plasmon. In order to explain the resonance influence of plasamon, we have presented certain optical extinction spectra of gold nanoparticles, which support our findings. Figure 20 is a simplified projection of gold nanoparticle extinction spectra versus energy, according to a specific embodiment of the present invention. This diagram is merely an illustration and should not unduly limit the scope of the present claims. An ordinary expert in the art will recognize many variations, modifications and alternatives. The extinction has been projected against the energy for simple spherical clusters, calculated using the Mie theory that includes multiple poles up to L = 10. As can be seen, there is almost an order of magnitude of increase in extinction near resonance. The optical extinction takes into account the absorption, the heating has been maximized at the resonance frequency, which supports our findings. Although we believe that such a mechanism exists, there may also be other variants, modifications and alternatives, depending on the modality. Additionally, certain preferred embodiments, described above in terms of deposit, other techniques may also be used. For example, the present invention can also be applied to etch layers, which have been deposited by conventional CVD (or plasmon-assisted CVD, which has been described herein), in the upper part of the preform (the substrate in which the particles they have been distributed in a desired pattern). In a specific embodiment, after the layer to be engraved has been deposited, one can use the present invention to cause a local increase in temperature (and / or electric field) in the vicinity of the particles of the preform, This causes the deposited layer to be removed in the vicinity of the particles through fusion, sublimation or some other physical effect. Of course, there may be variations, modifications and alternatives. It will be understood that the examples and embodiments described herein are for purposes of illustration only. As described above, the present invention allows the direct deposit of a structured film with a spatial scale and features provided by the geometrical shape of the preform, according to a specific embodiment. Although the deposit has been described, other forms of chemical reaction can be provided, using the present technique to selectively increase a particle temperature and / or the structure of the preform, according to a specific embodiment. Various modifications or changes will be suggested to persons skilled in the art and will be included within the spirit and point of view of this application and the scope of the appended claims.

Claims (64)

1. CLAIMS 1. A method for forming a film of material, with the use of guimic vapor deposition, assisted by plasmon, this method comprises: providing a substrate comprising a surface region; forming one or more particles on a portion of the surface region, this one or more particles have a thermal characteristic; apply a reactive species within a neighborhood of this one or more particles; irradiate this one or more particles with electromagnetic radiation, said electromagnetic radiation has a preselected frequency; increasing the temperature of the one or more particles, which has the thermal characteristic to at least one selected temperature, of an influence of at least the electromagnetic radiation, having the preselected frequency; and causing a chemical reaction of the reactive species from at least the increase in temperature of this one or more particles, to initiate the formation of a film of material from the reactive species.
2. 2. The method of claim 1, wherein said one or more particles comprise a metallic material.
3. 3. The method of claim 2, wherein the metallic material is selected from gold, copper, silver, titanium, aluminum, Ni, Pd, Pt, Rh, Ir and Fe.
4. 4. The method of claim 1, wherein the influence is a resonance effect of one or more particles, this resonance effect causes an increase in the thermal energy of this one or more particles.
5. 5. The method of claim 1, wherein the electromagnetic radiation is from a laser source.
6. 6. The method of claim 1, wherein the preselected frequency ranges from about 200 nanometers to about 20,000 nanometers.
7. 7. The method of claim 1, wherein the surface comprises silicon-bearing material.
8. 8. The method of claim 1, wherein one or more particles is characterized by a length of one nanometer to about 100 nanometers.
9. 9. The method of claim 1, wherein the chemical reaction is initiated by a predetermined temperature.
10. 10. The method of claim 1, wherein reactive species make contact with this one or more particles.
11. 11. The method of claim 1, wherein the surface region comprises a pattern of this one or more particle, said pattern being characterized as a preform structure, this preform structure being on or embedded in the substrate.
12. 12. The method of claim 1, wherein it further comprises forming the film of a material of a selected thickness.
13. 13. The method of claim 1, wherein the reactive species have the gaseous form.
14. 14. The method of claim 1, wherein the reactive species are in liquid form.
15. 15. The method of claim 1, wherein the reactive species are in the form of plasma.
16. 16. The method of claim 1, wherein the reactive species are in solid form.
17. 17. The method of claim 1, further comprising maintaining the substrate at a predetermined temperature.
18. 18. The method of claim 1, wherein the selected temperature is the reaction temperature of the reactive species.
19. 19. A method for causing a chemical reaction to form a film of material, which uses electromagnetic radiation, said method comprises: providing one or more particles, this one or more particles having a thermal characteristic; apply a reactive species within a neighborhood of this one or more particles; irradiate this one or more particles with electromagnetic radiation, said electromagnetic radiation has a preselected frequency; increasing the temperature of this one or more particles, having the thermal characteristic, to at least one selected temperature, of an influence of at least the electromagnetic radiation having the preselected frequency; cause a chemical reaction of the reactive species from at least the increase in the temperature of this one or more particles, to initiate the formation of a material of the reactive species.
20. 20. The method of claim 19, wherein said one or more particles comprise a metallic material.
21. 21. The method of claim 20, wherein the metallic material is selected from gold, copper, silver, titanium, aluminum, Ni, Pd, Pt, Rh, Ir and Fe.
22. 22. The method of claim 19, wherein the influence is a resonance effect thereof. one or more particles, this resonance effect causes an increase in the thermal energy of said one or more particles.
23. 23. The method of claim 19, wherein the electromagnetic radiation is from a laser source.
24. 24. The method of claim 19, wherein the preselected frequency ranges from about 200 nanometers to about 20,000 nanometers.
25. 25. The method of claim 19, wherein one or more particles are provided in a surface region of the substrate.
26. 26. The method of claim 19, wherein one or more particles is characterized by a length of one nanometer to about 100 nanometers.
27. 27. The method of claim 19, wherein the chemical reaction is initiated by a predetermined temperature.
28. 28. The method of claim 19, wherein reactive species make contact with this one or more particles.
29. 29. The method of claim 19, further comprising forming the film of a material with a selected thickness.
30. 30. The method of claim 19, wherein the reactive species are in the gaseous form.
31. 31. The method of claim 1, wherein the reactive species are in liquid form.
32. 32. The method of claim 1, wherein the reactive species are in the form of plasma.
33. 33. The method of claim 19, wherein the selected temperature is the reaction temperature, associated with the reactive species.
34. 34. A method for processing materials, with the use of chemical reactions, this method comprises: irradiating one or more particles with a source of electromagnetic radiation, this source of electromagnetic radiation has a predetermined frequency; and causing an increase in thermal energy in a portion of one or more of the particles, to raise a local temperature in the portion of one or more particles; where the increase in thermal energy is sufficient to initiate a chemical reaction of one or more species, within a neighborhood of the portion of this one or more particles.
35. 35. The method of claim 34, wherein said one or more particles comprise a metallic material
36. 36. The method of claim 35, wherein the metallic material is selected from gold, copper, silver, titanium, aluminum, Ni, Pd, Pt, Rh, Ir and Fe.
37. 37. The method of claim 34, wherein the increase in thermal energy is provided by a resonance effect of one or more particles, from the determined frequency of the source of electromagnetic radiation.
38. 38. The method of claim 34, wherein the electromagnetic radiation is from a laser source.
39. 39. The method of claim 34, wherein the preselected frequency varies from about 200 nanometers to about 30,000 nanometers.
40. 40. The method of claim 34, wherein one or more particles are provided in a surface region of a substrate.
41. 41. The method of claim 34, wherein said one or more particles are characterized by a length of one nanometer to about 100 nanometers.
42. 42. The method of claim 34, wherein the chemical reaction is initiated at a predetermined temperature.
43. 43. The method of claim 34, wherein the reactive species have the gaseous form.
44. 44. The method of claim 334, wherein the reactive species are in liquid form.
45. 45. The method of claim 34, wherein the reactive species are in the form of plasma.
46. 46. The method of claim 34, wherein the portion of one or more particles, is entirely of this one or more particles.
47. 47. The method of claim 34 wherein the portion of one or more particles is a local region of this one or more particles.
48. 48. The method of claim 34 wherein the elevated local temperature is a reaction temperature.
49. 49. The method of claim 34 in which the vicinity of this one or more particles is on and in contact with said one or more particles.
50. 50. A method for forming a film of material, with the use of a vapor deposition, this method comprises: providing a substrate comprising a pattern of at least one metal nanostructure, this metal nanostructure comprising a selected material. determine a plasmon resonance frequency of the material selected from the nanostructure; exciting a portion of the selected material, which uses an electromagnetic source, having a predetermined frequency of the resonance frequency of the plasmon, to cause an increase in the thermal energy of the selected material; and applying one or more chemical precursors on the substrate, which includes the selected material, excited at the resonant frequency of the plasmon; and cause the selective deposit of a film on at least the portion of the selected material.
51. 51. The method of claim 50, wherein the selective deposit is caused by a predetermined temperature of the selected material, from the increase in thermal energy.
52. 52. The method of claim 50, wherein the substrate is held within a chamber.
53. 53. The method of claim 50, wherein the material film is a ferroelectric film.
54. 54. The method of claim 50, wherein the one or more chemical precursors are applied during excitation of the selected material at the resonant frequency of the plasmon.
55. 55. The method of claim 50, wherein the portion of the material selected is entirely from the nanostructure.
56. 56. The method of claim 50, wherein the selected material is gold, copper, silver, titanium, aluminum, Ni, Pd, Pt, Rh, Ir and Fe.
57. 57. The method of claim 50, wherein the electromagnetic radiation is from a laser source.
58. 58. The method of claim 50, wherein the predetermined frequency varies from about 200 nanometers to about 30,000 nanometers.
59. 59. The method of claim 50, wherein the nanostructure is characterized by a length of one nanometer to about 100 nanometers.
60. 60. The method of claim 50, wherein one or more chemical precursors are in gaseous form.
61. 61. The method of claim 50, wherein this one or more chemical precursors are in the form of plasma.
62. 62. The method of claim 50, wherein the substrate is maintained at a temperature of about room temperature and lower.
63. 63. The method of claim 50, wherein the increase in thermal energy is local in the selected material.
64. 64. A system for forming a film of material, which uses the chemical vapor tank, comprising one or more memories, this one or more memories include: a key, directed to transfer a substrate, comprising a pattern of at least one metallic nanostructure, this metallic nano-structure comprises a selected material, inside a chamber; a key directed to excite a portion of the selected material, which uses an electromagnetic source having a predetermined frequency at the resonant frequency of the plasmon, of the selected material, to cause an increase in the thermal energy of the selected material, and a key directed to apply one or more chemical precursors, on the substrate, which includes the selected material excited at the resonant frequency of the plasmon, to cause the selective deposition of a film on only the portion of the selected material, while maintaining other regions of the substrate free of deposit.