MXPA06003659A - Serial circuit of solar cells with integrated semiconductor bodies corresponding method for production and module with serial connection - Google Patents

Abstract

The invention relates to a method for production of a serial circuit of solar cells with integrated semiconductor bodies, a serial circuit produced thus and photovoltaic modules, comprising at last one serial circuit. The invention is characterised in that conducting bodies (20) and semiconducting bodies (30) are applied to an insulating support layer, according to a pattern, whereby said pattern provides at least one dividing line (21) of conducting bodies. The regions adjacent to the conducting bodies are provided with spherical or particle-shaped semiconducting bodies (30). Parts of the semiconductor bodies are removed and the support layer coated on the side with a back contact layer (50). The back contact layer of a semiconducting body is thus exposed, for example, and brought into contact with the back contact layer (50) of the solar cell. The other side of the support layer (10) is provided with a front contact layer. By the introduction of two separating layers along a row of conducting bodies, the flow of current from the solar cells produced with the integrated semiconductor bodies can run such that the cell regions between the conducting body rows are connected in series. Individual series circuits can be connected to each other in the manner of tiles, such that each back contact is connected to a front contact.

Description

CIRCUIT IN SERIES OF SOLAR CELLS WITH BODIES SEMICONDUCTORS INTEGRATED. CORRESPONDING METHOD FOR PRODUCTION AND MODULE WITH SERIOUS CONNECTION DESCRIPTIVE MEMORY The invention is related to a series connection of solar cells that have integrated semiconductor elements. The invention also relates to a method for the production of a series connection of solar cells having integrated semiconductor elements. The invention also relates to a photovoltaic module with a series connection of solar cells. In industry, there is a growing demand for methods for the production of serial connections of solar cells. In particular in the specific field of photovoltaics, where the semiconductor particles are incorporated into a layered system to form a pn junction, it is practical to combine thin-layer and semiconductor particles to form cells and arrangements and connect these cells in series to be able to derive higher voltages. However, the problem of the serial connection of solar cells having semiconductor particles incorporated has not yet been satisfactorily resolved.

German patent application DE 100 52 914 A1, for example, describes a system of semiconductor components in which a semiconductor structure consisting of layers with incorporated semiconductor particles is completely drilled at predefined locations. Insulating conductive pins are inserted into these holes having sizes of a few hundred μm and these pins are firmly connected to a conductive layer at the front. The serial connection of the arrangements is achieved by installing conductive bridges, after which the arrangements are separated electrically from one another at the end of the procedure. The disconnection points are encapsulated with insulating and concurrently adhesive materials. In another embodiment, which is described in a similar manner in the previously published German application DE 100 52 914 A1, the approach followed during the production of the semiconductor component system is that different types of semiconductor components (material n and material p) are alternately applied. on defined surface areas. Thus, areas with positive or negative electrodes are formed alternately on one side of a system, and these electrodes can be connected in series via an integrated connection. For this purpose, the electrode layers are alternately interrupted at the top and bottom. However, the placement of different types of semiconductor components to create a surface with different electrodes is a costly method.

Additionally, the US patent. No. 4,407,320 describes a method for the production of solar cells in which spherical semiconductor elements are incorporated in an insulating layer. The spheres have a semiconductor of type n material on one side, while they have a semiconductor of type p material on the other side. In each case, a conductive layer is applied on both sides of the insulating layer to connect the spheres with one another. Additionally, conductive separation lines are made consisting of spheres, a paste or, for example, a wire. To produce a series connection, alternating cuts are made in the conductive layers on both sides of the conductive separation line. A known method is also to configure separate spherical semiconductor elements that constitute complete semiconductors, including the required electrodes. For example, European patent application EP 0 940 860 A1 describes the use of a spherical core to make a spherical semiconductor element by masking, etching steps and the application of several layers of material. Such semiconductor elements can be used as solar cells if the p-n junction is selected such that it can convert incident light into energy. If the p-n junction is configured such that it can convert an applied voltage into light, then the semiconductor element can be used as a light emitting element.

Additionally, the US patent. No. 5,578,503 discloses a method for the rapid production of semiconductor chalcopyrite layers on a substrate in which individual layers of the elements copper, indium or gallium and sulfur or selenium are applied to a substrate in elemental form or as a binary interelementatio compound. The substrate with the layer structure is quickly heated and maintained at a temperature of> 100. 350 ° C for between 10 seconds and one hour. The object of the invention is to provide a method for producing series connections of solar cells having integrated semiconductor elements that can be realized with just a few simple and sparse process steps. Still further, it is the object of the invention to provide a series connection of solar cells having integrated semiconductor elements that are produced with only a few process steps that are simple to perform. Furthermore, it is the objective of the invention to provide a photovoltaic module with solar cells connected in series. In accordance with the invention, this object is achieved by the features of claims 1, 18 and 43. Convenient refinements of the invention can be elucidated from the dependent claims. In the method according to the invention for the production of a series connection of solar cells having integrated semiconductor elements, one or more conductive elements and spherical or grain-shaped semiconductor elements are incorporated in an insulating support layer in accordance with a pattern, whereby the elements protrude from the surface of the support layer at least on one side of the support layer, and the pattern requires that at least one continuous separation line having the width P consisting of conductive elements. The areas next to a separation line or between different lines are adapted with semiconductor elements. In a particularly preferred embodiment of the invention, the pattern in the support layer stipulates that there is a distance between a separation line and an area that is provided with semiconductor elements so that, along with a separation line, a thin strip is formed in which separation cuts can be made without the conducting elements or the semiconductor elements being touched and also being cut off. It is also possible to have no distance so that the separation cuts are made in such a way that, as a result, parts of the conductive elements and / or the semiconductor elements are interrupted the elements incorporated in the support layer can be, for example, elements made of solid material or other cores of coated substrates. Examples of conductive elements can be, for example, particles made of a conductive material or particles coated with a conductive material. In a preferred embodiment of the invention, the conductive material is copper. In another especially preferred embodiment of the invention, particles made of semiconductors of compounds 1-11-VI or semiconductor-coated substrates of compounds 1-11-VI are used as the semiconductor elements, so that the designation "semiconductor element" can refer to any element in which a constituent is a semiconductor material. In another embodiment of the invention, the conductive elements are formed by one or more strips. This has the advantage that a continuous separation line can be created. Furthermore, it has proven convenient to incorporate a conductive element in the form of a paste in the support layer. This is especially convenient when the support layer is a matrix with depressions for elements to be incorporated. Thus, the conductive paste can be applied on one side of the matrix and can be pressed through the depressions to the other side of the matrix so that both sides have conductive separation lines that come into contact through the support layer. In accordance with the, parts of the semiconductor elements are removed from one side of the support layer. This is done to expose a surface area of semiconductor element that will come into contact with the subsequent contact of the solar cell. This is preferably a subsequent contact layer that was deposited on the semiconductor element below a semiconductor layer through which the removal of the semiconductor layer is necessary. Furthermore, a subsequent contact layer is applied on the side of the support layer on which the semiconductor elements have been removed and a front contact layer is applied on the other side of the support layer. The front contact layer and the subsequent contact layer consist of a conductive material. To produce a solar cell, depending on the modality envisaged, other function layers may be applied, which may include, for example, an intermediate layer made of CdS, intrinsic zinc oxide and / or a transparent conductive oxide layer (TCO). . In another especially preferred embodiment of the invention, in addition to a back contact layer and a semiconductor layer, the semiconductor elements comprise other function layers, which may also include an intermediate layer made of CdS, intrinsic zinc oxide and / or a layer TCO In another step of the process, two separation cuts are made along a row of conductive elements, whereby a first separation cut is made in the front contact layer and a second separation cut is made in the second layer. later contact. Here, the separation cuts are made on different sides of the corresponding separation line consisting of conductive elements and penetrate the subsequent contact layer to the support layer. In a particularly preferred embodiment of the invention, the row of conductor elements is essentially straight and extends between two edges of the support layer that are opposite each other. However, the pattern of separation lines consisting of conductive elements and areas between them in the form of solar cells can be freely selected so that, for example, curved separation lines are also possible. The conductive elements and semiconductor elements can be, for example, dispersed and then pressed. In a particularly preferred embodiment of the invention, the spherical or grain-shaped elements are incorporated into a matrix of a support layer having depressions prepared for the elements. The elements can be incorporated in the support layer, for example, by a heating and / or pressure process. Various methods of physical vapor deposition (PVD) and / or chemical vapor deposition (CVD) or other methods that have adapted to the type of the layer in question can be used to apply the front contact layer and the back contact layer. If, for example, a conductive adhesive is used, it has proven convenient to brush or spread the adhesive. The method according to the invention makes it possible to generate a series connection in which current flows through an area of semiconductor elements of the front contact layer within the separation line consisting of conductive elements. However, the additional flow of current away from the conductive elements in the next semiconductor element area of the front contact layer is prevented by a first separation cut so that the current flows through the conductive elements towards the subsequent contact. Here, the flow of current through the subsequent contact is prevented by a second separation cut in the subsequent contact. Thus, between the lines of separation consisting of conductive elements, areas are formed that function as solar cells and are connected in series with one another. For this purpose, the serial connection of solar cells having integrated semiconductor elements has at least one insulating support layer in which conductive elements and spherical or grain-shaped semiconductor elements are incorporated in accordance with a standard, whereby the elements protrude from the layer at least on one side of the support layer. The pattern requires at least one continuous separation line having a width B consisting of conductive elements, while areas close to a row or between several rows are provided with semiconductor elements. The series connection also has a front contact layer and a back contact layer, whereby the back contact layer rests on the side of the support layer on which parts of the semiconductor elements have been removed. In each case, two separation cuts are made along a separation line consisting of conductive elements, whereby a first separation cut is made in the front contact layer and a second separation cut is made in the back contact layer. The separation cuts are in different contacts and penetrate the back contact layer to the support layer. When the series connection is produced with the method according to the invention, on the side of the support layer on which the rear contact layer of the solar cell is arranged, at least one of the spherical semiconductor elements in The grain shape has a surface through which a direct contact is established between the back contact layer of the solar cell and a subsequent contact layer of the semiconductor element. If the semiconductor elements are, for example, a substrate coated with a subsequent contact and with a semiconductor, then the coating of the semiconductor elements is removed to a degree which forms a surface consisting of a subsequent contact which may come into contact with the Rear contact layer of the solar cell. If, in addition to a subsequent contact layer and a semiconductor layer, the semiconductor elements have other function layers, then they were also removed to expose a surface consisting of the subsequent contact. The essential advantage of the series connection in accordance with the invention of solar cells and the corresponding method for their production is based on a simple configuration of the connection of the areas of the solar cell that requires a few processing steps. The required conductive elements can be incorporated in various forms and in different ways and the creation of separation cuts is also a simple process step. If spherical or grain-shaped elements are used, they can be incorporated with the same method as the semiconductor elements so that they do not have to be developed and implemented in additional devices for this purpose. If, for example, a paste is used that is applied on a support matrix having depressions as a conductive element, then two separation lines can be created that are simply joined by the support layer. Additionally, the requirements for additional material are minor since only conductive elements have to be incorporated. The separation cuts that are made do not interfere with the global layout since the weakening of the overall structure is less. Further advantages, special features and practical embodiments of the invention can be elucidated from the dependent claims and from the following presentation of preferred embodiments by looking at the figures. The figures show the following: Figures 1A-1C show the insertion of semiconducting and conductive spherical particles in a supporting layer; Figures 2A-2C show the structure of front contact layers and subsequent contact layers; Figures 3A-3B show the series connection according to the invention of solar cells having integrated semiconductor particles; and Figure 4 shows a particularly preferred embodiment of a shingle-like connection of several serial connections.

Figures 1A-1C show the incorporation of grain or spherical conductive elements 20 and semiconductor elements 30 in an insulating support layer 10. It has proved convenient to use a flexible film as the support layer here. The support layer preferably consists of a thermoplastic material into which the conductive elements can be pressed. The polymer has proven to be especially practical and can be, for example, a polymer of the group comprising the epoxides, polycarbonates, polyesters, polyurethanes, polyacrylics and / or polyimides. The inserted elements are preferably spherical or grain-shaped particles with conductive or semiconducting properties. In addition to the pure spherical shape, the elements can also have irregular shapes such as grain with any contour. These also include, for example, cubes, parallelepipeds or pyramids. For this reason, spheres or grains made of conductive materials such as copper can be used as the conductive elements 20. In another especially preferred embodiment of the invention, the conductive elements are incorporated in the form of strips or a paste in the form of a separation line. . The semiconductor elements consist entirely or partially of suitable semiconductor materials used in photovoltaics. In a particularly preferred embodiment of the invention, the semiconductor materials come from the semiconductor class of compounds 1-11-VI, including for example copper and indium diselenide, copper and indium disulfide, copper, indium and gallium disulfide or disulfide copper, indium and gallium diselenide. In another embodiment of the invention, the semiconductor elements consist of silicon semiconductors. These can be conductors made of solid material or substrate cores coated with semiconductor materials. The semiconductor elements and the conductive elements are incorporated into the support layer 10 in such a way that they protrude from the surface of the layer on at least one side of the support layer. For this purpose, the elements can be applied, for example, by diffusion, spraying and / or printing, after which they can be pressed. In order to press the elements in the support layer, it can be heated, for example. The elements can be arranged in a desired pattern, for example, using an auxiliary means, and in this way placed on or in the support layer. In an especially preferred embodiment of the invention, the elements are incorporated into a prepared matrix of a support layer in which there are depressions within which the corresponding elements are inserted. To fix the elements to the support layer, a heating and / or pressure process can be carried out. For example, if a paste is used as the conductive element, the paste can be applied over desired areas of the matrix and pressed into the depressions located here. The paste can be spread on the back of the support layer so that a separation line forms on both sides of the insulating support layer which are connected to each other by the depressions. The conductive elements are incorporated into the support layer in accordance with a pattern which requires at least an essentially straight line of separations having a certain width B consisting of conductive elements 20. In this context, the fact that the row is essentially Straight means that it also includes slight deviations from a straight line. If a geometrically different delineation is to be made between individual solar cells for certain applications, a different course can be selected from the rows of conductive elements such as, for example, curved separation lines. Preferably, the separation line consisting of conductive elements extends between two edges of the support layer 10 that are opposite one another. The width of the rows of conductive elements is preferably in the order of magnitude of B = 10 μm to 3 mm and, depending on the dimensions of the conductive elements used, is defined by one or more conductive elements. In a particularly preferred embodiment of the invention, the width of the separation lines is between 10 μm and 30 μm. If spherical or grain particles are used as conductive elements, the width of the separation lines is a function of the diameter of the particles used. Accordingly, the width of the separation lines may also be in the order of magnitude of one or more diameters of a conductive sphere, especially between 10 μm and 500 μm. Depending on the desired width of a solar cell to be connected, a support cell is divided into appropriate areas by several rows of conductive elements. The areas next to a separation line or between several separation lines are provided with semiconductor elements. The width of a solar cell thus limited preferably is in the order of magnitude of 1 mm to 3 cm. In a particularly preferred embodiment of the invention, the width of a solar cell is between 3 mm and 5 mm. The width of a supporting layer with a series connection thus formed is preferably in the order of magnitude of 5 cm to 30 cm, whereby it has proved especially advantageous to have strip-like modules consisting of several solar cells connected in series that preferably have a width of approximately 10 cm. Figures 2a-2c show the formation of the layer structure for the production of a solar cell having integrated semiconductor elements. In a particularly preferred embodiment of the invention, as a first step, material is removed from one side of the support layer 10. This side is removed to a layer thickness to which parts of the incorporated elements have to be removed in the same way . The areas of the elements that have been removed are also shown in Figure 2a by the remaining contours of two conductive and semiconductor elements shown by a dotted line. However, the removal of the support layer can also take place at other points in the time preceding the application of a subsequent contact 50 on this side. In another embodiment of the invention, after incorporation, the semiconductor elements protrude from one side of the support layer to such a degree that parts of them can be removed without simultaneous removal of the support layer. The conductive elements, the semiconductor elements and / or the support layer can be removed, for example, by mechanical methods such as rectification, polishing, chemical or wet chemical methods (processes) such as etching, photolithography, or thermal energy supply, for example, by laser or radiation with light having an adequate wavelength or wavelength scale or by other thermal methods. The degree of removal depends mainly on the semiconductor elements used. If, for example, spherical or grain-shaped core cores are used, which are coated with at least one subsequent contact layer and with a semiconductor layer, the removal is carried out until the subsequent contact layer of the particle is exposed to establish contact with the back layer of the solar cell. In a particularly preferred embodiment of the invention, the semiconductor elements are glass substrate cores that are coated with a subsequent contact made of molybdenum and with a semiconductor. In this case, the removal of the support layer is carried out up to a layer thickness in which the molybdenum layer of the elements is exposed. In that context, the removal also depends on whether all the semiconductor elements are located at equal depths in the support layer. If the semiconductor elements are inserted at different depths or if the size of the elements varies, then there is a possibility that not all semiconductor elements will be stripped of their coating until their subsequent contact layer. In another step of the process, a subsequent contact layer 50 is applied on the side of the support layer 10 on which at least parts of the semiconductor elements have been removed. Conducting substances such as metals are used as material for this subsequent contact. It is also possible to use transparent conductive oxides (TCO) or substances of various kinds of polymers. Particularly suitable materials are, for example, epoxy resins, polyurethanes and / or polyimides provided with suitable conductive particles such as carbon, indium, nickel, molybdenum, iron, nickel chromium, silver, aluminum and / or the corresponding alloys or oxides. Another possibility comprises intrinsic conducting polymers. These include, for example, polymers from the PANi group. Subsequent contact can be produced by the PVD method as spray coating and evaporation or CVD method as PE-CVD or MO-PVD or others with another technique that suits for the subsequent contact material.

In another step of the process, a conductive front contact layer 40 is deposited on one side of the support layer on which the elements were not processed. This can also be done with PVD or CVD methods as well as with other methods that are adapted for the front contact material. Various transparent conductive oxides (TCO) can be used, such as zinc oxide doped with aluminum (ZnO: AI) (also called AZO), tin oxide and indium (ITO) or tin oxide doped with fluorine (Sn02: F) as material for frontal contact. It has proven convenient to use a transparent front contact whose transmission preferably suits the semiconductor in question. Other function layers can be deposited before and / or after the deposition of a frontal contact and / or a subsequent contact. These include, for example, an intermediate layer made of CdS, intrinsic zinc oxide and / or another TCO layer. In a particularly preferred embodiment of the invention, these function layers have already been deposited on the semiconductor elements used so that there is no need for another deposition process to produce a solar cell. As another essential process step, two separation cuts 60 and 61 are made along a row of conductive elements as shown in Figure 3a. Here, a separation cut 60 is made in the front contact layer 40 and a separation cut 61 is made in the back contact layer, whereby said separation cuts lie on different sides of the row of conductive elements. The separation cuts can be made using methods such as cutting, grooving, thermal energy supply such as, for example, laser cutting or by photolithographic processes. In a particularly preferred embodiment of the invention, the separation cuts created in this way are filled with an insulating material to achieve the flattest possible surface of the solar cell connection. However, this step is optional since the required depth of the 60:61 separation cuts is very small due to the fact that the thin front contact and the subsequent contact layers are on the μm scale. Once the procedure has been completed and all the deposition and separation steps have been carried out, the resulting layers with the semiconductor elements constitute a series connection of solar cells that can be used in a photovoltaic module. Depending on the modality of the photovoltaic module, it may comprise one or more serial connections. The resulting current course is indicated in Figure 3b with various arrows. In the modality shown, the negative frontal contact is in the upper part while the positive posterior contact is in the background part. The current flows via the semiconductor element 30 in the frontal contact in the conductive element 20 and thence to the rear contact 50, since the first separation cut 60 prevents an additional current flow. The second separation cut 61 prevents current flow through subsequent contact 50.

In a particularly preferred embodiment of the invention, said series connection is joined to at least one other corresponding series connection to form a larger module. This is done, for example, in that the individual serial connections are configured to be similar to strips with a width in the order of magnitude of 5 cm to 30 cm and the sub-modules thus formed rest one on the other at the edges like shingles. This is shown in Figure 4. Thus, a subsequent contact rests in a frontal contact and the individual modules are connected, in turn, in series. The contact between each front contact layer and the subsequent contact layer can be made by a conductive adhesive such as silver epoxide.

List of reference numbers 10 Support layer, film 20 Conductive element, conductive element 21 Separation line 30 Semiconductor, spherical or grain-shaped element 40 Front contact layer 50 Back contact layer 60, 61 Separation cuts

Claims (38)

NOVELTY OF THE INVENTION CLAIMS

1. - A method for the production of a series connection of solar cells having integrated semiconductor elements, characterized by the following characteristics: incorporation of one or more conductive elements (20) in an insulating support layer (10) in accordance with a standard , whereby the conductive elements (20) protrude from the surface of the support layer on at least one side of the support layer, and the pattern requires at least one separation line (21) having a width B and consisting of one or more conductive elements (20); incorporation of several spherical or grain-shaped semiconductor elements (30) into the insulating support layer (10) in accordance with a pattern, whereby the semiconductor elements (30) consist of substrate cores that are coated with at least a conductive back contact layer made of molybdenum and with a semiconductor layer made of a compound semiconductor l-III-VI disposed thereon, the semiconductor elements (30) protrude from the surface of the support layer on at least one side of the support layer, and the pattern requires that the areas next to a separation line (21) or several other separation lines (21) consisting of conductive elements (20) be provided with semiconductor elements (30); removing parts of the semiconductor elements (30) on one side of the support layer (10) until the subsequent contact layer of the semiconductor elements (30) is exposed; application of a conductive back contact layer (50) on one side of the support layer (10) on which parts of the semiconductor elements (30) have been removed; application of a conductive front contact layer (40) on the side of the support layer (10) on which semiconductor elements have not been removed, with which before and / or after the deposition of the front contact layer ( 40) and / or the back contact layer (50), an intermediate layer made of CdS and / or a layer made of intrinsic zinc oxide, or an intermediate layer made of CdS and / or a layer made of oxide is deposited. of intrinsic zinc has already been deposited on the spherical or grain-shaped semiconductor elements (30) employed; making two separation cuts (60; 61) along a separation line (21) consisting of conductive elements (20), whereby a first separation cut (60) is made in the front contact layer ( 40) and a second separation cut (61) is made in the subsequent contact layer, the separation cuts are on different sides of the corresponding separation line (21), and the separation cuts (60; 61) penetrate the back contact layer (50) to the support layer (10).

2. The method according to claim 1, further characterized in that the spherical or grain-shaped semiconductor elements (30) have a layer made of transparent conductive oxide (TCO).

3. The method according to one or both of the preceding claims 1 and 2, further characterized in that, in addition to removing parts of the semiconductor elements (30), parts of the conductive elements (20) are also removed.

4. The method according to one or more of the preceding claims, further characterized in that, in addition to the removal of parts of the semiconductor elements (30), part of the support layer (10) is removed.

5. The method according to one or more of the preceding claims, further characterized in that the conductive elements (20) and / or the semiconductor elements (30) are applied to the support layer (10) by diffusion, spraying and / or printing, after which they are incorporated into the support layer.

6. The method according to one or more of the preceding claims, further characterized in that the conductive elements (20) in the form of particles, in the form of grain, in the form of strips or in the form of a paste are incorporated into the layer of support (10).

7. The method according to one or more of the preceding claims, further characterized in that the conductive elements (20) and / or the semiconductor elements (30) are arranged in a pattern using an auxiliary means and the elements (20).; 30) are placed on and / or inside the support layer using the auxiliary means.

8. The method according to one or more of the preceding claims, further characterized in that the support layer (10) is a matrix with depressions within which the elements (20; 30) are incorporated.

9. The method according to one or more of the preceding claims, further characterized in that the elements (20: 30) are incorporated into the support layer (10) by a heating and / or pressure process.

10. The method according to one or more of the preceding claims, further characterized in that a separation line (21) consisting of conductive elements (10) extends between two edges of the support layer (10) that are opposite one of the other.

11. The method according to one or more of the preceding claims, further characterized in that the removal of the elements (20: 30) and / or the support layer (10) is performed by grinding, polishing, engraving, supply of thermal energy and / or by lithographic processes.

12. The method according to one or more of the preceding claims, further characterized in that the back contact layer (50) and the front contact layer (40) are deposited by PVD methods, CVD methods or other methods that have been adapted to the type of layer in question.

13. The method according to one or more of the preceding claims, further characterized in that the separation cuts (60; 61) are made using methods such as cutting, grooving, engraving, thermal energy supply or by photolithographic processes.

14. The method according to one or more of the preceding claims, further characterized in that the width of a separation line (21) is in the order of magnitude of B = 10 μm to 3 mm, especially between 10 μm and 500 mm. μm).

15. The method according to one or more of the preceding claims, further characterized in that the distance between two lines of separation (21) is in the order of magnitude from 1 mm to 3 cm, especially between 3 mm and 5 mm.

16. A serial connection of solar cells having integrated semiconductor elements, wherein the series connection has at least the following characteristics: an insulating support layer (10) into which one or more conductive elements are incorporated ( 20) according to a pattern, whereby the conductive elements (20) protrude from the surface of the support layer on at least one side of the support layer, and the pattern requires at least one separation line ( 21) having a width B and consisting of one or more conductive elements 20; several spherical semiconducting elements in the form of grain (30) in the insulating support layer (10), whereby the semiconductor elements (30) consist of a substrate core that is coated with at least one conductive back contact layer made of molybdenum and with a semiconductor layer made of a semiconductor of compounds I-III-VI, and the semiconductor elements (30) protrude from the surface of the support layer on at least one side of the support layer and form a pattern wherein the areas near a separation line (21) or between several separation lines (21) are provided with semiconductor elements (30); a conductive front contact layer (40) on one side of the support layer (10) on which the elements (20; 30) of the layer protrude; a conductive rear contact layer (50) on the side of the support layer which is opposite from the front contact layer (40); an intermediate layer made of CdS and / or a layer made of intrinsic zinc oxide, or an intermediate layer made of CdS and / or a layer made of intrinsic zinc oxide already in the spherical or grain-shaped semiconductor elements (30) employees; in each case, two separation cuts (60; 61) along a row of conductive elements (20), whereby a first separation cut (60) is made in the front contact layer (40) and a second separation cut (61) is made in the back contact layer, the separation cuts are on different sides of the corresponding row of conductive elements (20), and the separation cuts (60; 61) penetrate the back contact layer (50) to the support layer (10). ); and on the side of the support layer (10) on which the rear contact layer (50) of the solar cell is arranged, at least one of the semiconductor elements (30) has a surface via which a contact is established direct between the back contact layer (50) of the solar cell and the back contact layer of the semiconductor element (30).

17.- The serial connection in accordance with the claim 16, further characterized in that the support layer (10) consists of a thermoplastic material.

18. The series connection according to one or both of claims 16 and 17, further characterized in that the support layer consists of a polymer of the group comprising epoxides, polyurethanes, polyacrylics, polycarbonates, polyesters and / or polyimides.

19. The serial connection according to one or more of claims 16 to 18, further characterized in that a conductive element (20) is formed by a paste or by a strip.

20. The serial connection according to one or more of claims 16 to 19, further characterized in that a conductive element (20) is formed by a spherical particle or in the form of grain.

21.- The serial connection in accordance with the claim 20, further characterized in that a conductive element (20) is made of a conductive material in the form of a solid material, or a conductive element (20) consists of a substrate core that is coated with conductive material.

22. - The series connection according to claim 21, further characterized in that a conductive element (20) is made of copper in the form of a solid material or a substrate core that is coated with copper.

23. The serial connection according to one or more of claims 16 to 22, further characterized in that the semiconductor elements (30) have a layer made of transparent conductive oxide (TCO).

24. The serial connection according to one or more of claims 16 to 23, further characterized in that the separation line (21) consisting of conductive elements (20) is essentially straight and extends between two edges of the support layer (10) which are opposite each other.

25. The serial connection according to one or more of claims 16 to 24, further characterized in that the width of a separation line (21) is in the order of magnitude of B = 10 μm to 3 mm, especially between 10 μm and 500 μm.

26. The series connection according to one or more of claims 16 to 25, further characterized in that the distance between two separation lines (21) is in the order of magnitude from 1 mm to 3 cm, especially between 3 mm and 5 mm.

27. - The series connection according to one or more of claims 16 to 26, further characterized in that the front contact layer (40) is made of a conductive material.

28. The serial connection according to claim 27, further characterized in that the contact layer (40) is made of a transparent conductive oxide (TCO).

29. The series connection according to one or more of claims 16 to 28, further characterized in that the rear contact layer (50) is made of a metal, a transparent conductive oxide (TCO) or a conductive polymer .

30.- The serial connection in accordance with the claim 29, further characterized in that the back contact layer (50) consists of a group polymer comprising the epoxy resins, polyurethanes and / or polyimides having conductive particles of a group comprising carbon, indium, nickel, silver, molybdenum, iron , nickel chromium, aluminum and / or the corresponding alloys or oxides.

31.- The serial connection in accordance with the claim 30, further characterized in that the back contact layer (50) consists of an intrinsic conducting polymer.

32. The series connection according to one or more of claims 16 to 31, further characterized in that the separation cuts (60; 61) are filled with an insulating material.

33. - The series connection according to one or more of claims 16 to 32, further characterized in that the series connection is similar to strip.

34.- The series connection according to one or more of claims 16 to 33, further characterized in that the width of the serial connection is in the order of magnitude of 5 cm to 30 cm, especially about 10 cm.

35.- The series connection according to one or more of claims 16 to 34, further characterized in that the series connection is connected to another series connection in such a way that the rear contact layer (50) is in contact with a front contact layer of the other connection in series.

36. The series connection according to claim 35, further characterized in that the series connection is joined to at least one other series connection in a shingle-like configuration, whereby the rear contact layer (50) rests on the a front contact layer or the front contact layer (40) rests on a subsequent contact layer of the other series connection.

37. The series connection according to one or both of claims 35 to 36, further characterized in that the rear contact layer (50) is joined by a conductive adhesive to a front contact layer of the other series connection.

38. - A photovoltaic module, comprising a series connection according to one or more of claims 16 to 37.