MX3855E - IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURES - Google Patents
IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURESInfo
- Publication number
- MX3855E MX3855E MX765947U MX594776U MX3855E MX 3855 E MX3855 E MX 3855E MX 765947 U MX765947 U MX 765947U MX 594776 U MX594776 U MX 594776U MX 3855 E MX3855 E MX 3855E
- Authority
- MX
- Mexico
- Prior art keywords
- transistor structures
- manufacturing transistor
- manufacturing
- structures
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US56059075A | 1975-03-21 | 1975-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX3855E true MX3855E (en) | 1981-08-20 |
Family
ID=24238449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX765947U MX3855E (en) | 1975-03-21 | 1976-03-19 | IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURES |
Country Status (9)
Country | Link |
---|---|
BE (1) | BE839856A (en) |
BR (1) | BR7601736A (en) |
DE (1) | DE2612102A1 (en) |
FR (1) | FR2305022A1 (en) |
IT (1) | IT1058642B (en) |
MX (1) | MX3855E (en) |
NL (1) | NL7602917A (en) |
PT (1) | PT64934B (en) |
SE (1) | SE416598B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1543845A (en) * | 1975-05-27 | 1979-04-11 | Fairchild Camera Instr Co | Production of a narrow opening to a surface of a material |
FR2454698A1 (en) * | 1979-04-20 | 1980-11-14 | Radiotechnique Compelec | METHOD FOR PRODUCING INTEGRATED CIRCUITS USING A MULTILAYER MASK AND DEVICES OBTAINED BY THIS METHOD |
FR2460037A1 (en) * | 1979-06-22 | 1981-01-16 | Thomson Csf | METHOD FOR SELF-ALIGNING REGIONS DIFFERENTLY DOPED FROM A SEMICONDUCTOR STRUCTURE |
US5750147A (en) | 1995-06-07 | 1998-05-12 | Emisphere Technologies, Inc. | Method of solubilizing and encapsulating itraconazole |
-
1976
- 1976-03-19 MX MX765947U patent/MX3855E/en unknown
- 1976-03-19 FR FR7608064A patent/FR2305022A1/en active Granted
- 1976-03-19 NL NL7602917A patent/NL7602917A/en not_active Application Discontinuation
- 1976-03-22 DE DE19762612102 patent/DE2612102A1/en not_active Withdrawn
- 1976-03-22 PT PT64934A patent/PT64934B/en unknown
- 1976-03-22 BE BE165413A patent/BE839856A/en not_active IP Right Cessation
- 1976-03-22 IT IT21423/76A patent/IT1058642B/en active
- 1976-03-22 SE SE7603510A patent/SE416598B/en unknown
- 1976-03-22 BR BR7601736A patent/BR7601736A/en unknown
Also Published As
Publication number | Publication date |
---|---|
PT64934B (en) | 1977-08-25 |
BR7601736A (en) | 1976-09-21 |
SE7603510L (en) | 1976-09-22 |
DE2612102A1 (en) | 1976-10-14 |
FR2305022A1 (en) | 1976-10-15 |
PT64934A (en) | 1976-04-01 |
IT1058642B (en) | 1982-05-10 |
SE416598B (en) | 1981-01-19 |
BE839856A (en) | 1976-07-16 |
FR2305022B1 (en) | 1980-07-04 |
NL7602917A (en) | 1976-09-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR7601739A (en) | OSSEA PROTETIC COIFA | |
BR7706588A (en) | PIECES FOR PIECES | |
AT369129B (en) | ROLLING GATE | |
SE413963B (en) | TRANSISTOROSOCILLATOR FOR THE MICROVAGUE AREA IN CLAPP COUPLING | |
SE435195B (en) | REDUCTION FOR STABLE MANUFACTURING | |
SE426054B (en) | PROCEDURE FOR MANUFACTURING POR Concrete | |
BR7606692A (en) | SHAPE SHAPE | |
MX3855E (en) | IMPROVEMENTS IN THE METHOD FOR MANUFACTURING TRANSISTOR STRUCTURES | |
NL7509624A (en) | NUT. | |
SE7605291L (en) | LASOR BODY FOR IN CONCRETE FORMING ELEMENT | |
MX147482A (en) | IMPROVED METHOD FOR MANUFACTURING CONSTRUCTION ELEMENTS | |
ES218957Y (en) | PERFECTED STONE HOLE. | |
JPS5190313A (en) | TSUKISEITAIRUSE JUSHI | |
SU533428A1 (en) | Device for deforming the workpiece | |
AR213531A1 (en) | METHOD FOR PROPAGING BASIDIOMYCETES | |
BR7603767A (en) | COMPOSITION WITNESS FOR HEMOGLOBINOMETRY | |
JPS51104238A (en) | DANSEI HYOMEN HAROHAKI | |
ES213997Y (en) | DEVICE FOR THE MANUFACTURE OF PILLARS. | |
DD138230A1 (en) | DEVICE FOR MANUFACTURING SLIDING STRUCTURES | |
ES210742Y (en) | MOTORIZED VALVE FOR OLEOHIDRAULIC CIRCUITS. | |
AR203340A1 (en) | ABACO FOR NON-SEEERS | |
ES218978Y (en) | DEVICE FOR THE RETENTION OF PANELS IN FORMWORK. | |
ES217721Y (en) | IMPROVED DEVICE FOR THE FORMATION OF SNOWFLAKES IN PANELS. | |
SU556084A2 (en) | Gate | |
ES209336Y (en) | BODY-CASE FOR MUNECES. |