MX344326B - Proceso para texturizar la superficie de un substrato de silicio, substrato estructurado y dispositivo fotovoltaico que comprende tal substrato estructurado. - Google Patents

Proceso para texturizar la superficie de un substrato de silicio, substrato estructurado y dispositivo fotovoltaico que comprende tal substrato estructurado.

Info

Publication number
MX344326B
MX344326B MX2014007392A MX2014007392A MX344326B MX 344326 B MX344326 B MX 344326B MX 2014007392 A MX2014007392 A MX 2014007392A MX 2014007392 A MX2014007392 A MX 2014007392A MX 344326 B MX344326 B MX 344326B
Authority
MX
Mexico
Prior art keywords
substrate
texturing
structured
structured substrate
photovoltaic device
Prior art date
Application number
MX2014007392A
Other languages
English (en)
Other versions
MX2014007392A (es
Inventor
Habka Nada
Bulkin Pavel
Roca I Cabarrocas Pere
Original Assignee
Total Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Total Sa filed Critical Total Sa
Publication of MX2014007392A publication Critical patent/MX2014007392A/es
Publication of MX344326B publication Critical patent/MX344326B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La invención se relaciona a un proceso para texturizar la superficie de un substrato de silicio, que comprende una etapa de exposición de la superficie a un plasma MDECR generado, por lo menos de argón, usando entre 1.5 W/cm2 y 6.5 W/cm2 de potencia de plasma en una fuente de plasma de resonancia ciclotrónica electrónica distribuida en matriz, la polarización del substrato que está entre 100 V y 300 V.
MX2014007392A 2011-12-22 2012-12-20 Proceso para texturizar la superficie de un substrato de silicio, substrato estructurado y dispositivo fotovoltaico que comprende tal substrato estructurado. MX344326B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1104038A FR2984769B1 (fr) 2011-12-22 2011-12-22 Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
PCT/EP2012/076338 WO2013092833A1 (fr) 2011-12-22 2012-12-20 Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaïque comportant un tel substrat structure

Publications (2)

Publication Number Publication Date
MX2014007392A MX2014007392A (es) 2015-10-09
MX344326B true MX344326B (es) 2016-12-13

Family

ID=47469993

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2014007392A MX344326B (es) 2011-12-22 2012-12-20 Proceso para texturizar la superficie de un substrato de silicio, substrato estructurado y dispositivo fotovoltaico que comprende tal substrato estructurado.

Country Status (10)

Country Link
US (1) US20140338744A1 (es)
EP (1) EP2795677B1 (es)
JP (1) JP6324904B2 (es)
KR (1) KR20140105603A (es)
CN (1) CN104488090B (es)
AU (1) AU2012357017B2 (es)
FR (1) FR2984769B1 (es)
MX (1) MX344326B (es)
WO (1) WO2013092833A1 (es)
ZA (1) ZA201404027B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101965343B1 (ko) * 2017-11-28 2019-04-03 와이아이테크(주) 결정질 태양전지용 플라즈마 텍스처링 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744350B2 (ja) * 1990-11-22 1998-04-28 キヤノン株式会社 半導体基板およびその製造方法
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
US6474258B2 (en) * 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
FR2838020B1 (fr) 2002-03-28 2004-07-02 Centre Nat Rech Scient Dispositif de confinement de plasma
KR101224310B1 (ko) 2004-03-09 2013-01-21 엑사테크 엘.엘.씨. 팽창성 열 플라즈마 침착 시스템
JP2006253366A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 半導体装置製造方法
WO2008007944A1 (en) * 2006-07-12 2008-01-17 Technische Universiteit Eindhoven Method and device for treating a substrate by means of a plasma
EP1918965A1 (en) * 2006-11-02 2008-05-07 Dow Corning Corporation Method and apparatus for forming a film by deposition from a plasma
EP1918414A1 (en) * 2006-11-02 2008-05-07 Dow Corning Corporation Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance
KR101393785B1 (ko) * 2007-05-21 2014-05-13 엘지이노텍 주식회사 반도체 발광 소자 및 그 제조방법
US8071872B2 (en) * 2007-06-15 2011-12-06 Translucent Inc. Thin film semi-conductor-on-glass solar cell devices
JP5425404B2 (ja) * 2008-01-18 2014-02-26 東京エレクトロン株式会社 アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
KR20100037765A (ko) 2008-10-02 2010-04-12 삼성전자주식회사 플라즈마 발생장치
EP2409335B1 (en) * 2009-03-17 2018-06-06 IMEC vzw Method for plasma texturing using two dry etching steps
FR2949276B1 (fr) * 2009-08-24 2012-04-06 Ecole Polytech Procede de texturation de la surface d'un substrat de silicium et substrat de silicium texture pour cellule solaire
WO2011056783A2 (en) * 2009-11-09 2011-05-12 3M Innovative Properties Company Etching process for semiconductors
US20110120536A1 (en) * 2009-11-20 2011-05-26 Dapeng Wang Roughness control of a wavelength selective reflector layer for thin film solar applications
US8187979B2 (en) * 2009-12-23 2012-05-29 Varian Semiconductor Equipment Associates, Inc. Workpiece patterning with plasma sheath modulation
JP2011254041A (ja) * 2010-06-04 2011-12-15 Renesas Electronics Corp 半導体装置
US9847225B2 (en) * 2011-11-15 2017-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing the same
US20130140592A1 (en) * 2011-12-01 2013-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light emitting diode with improved light extraction efficiency and methods of manufacturing same

Also Published As

Publication number Publication date
FR2984769B1 (fr) 2014-03-07
ZA201404027B (en) 2016-08-31
EP2795677B1 (fr) 2020-05-06
AU2012357017A1 (en) 2014-08-07
EP2795677A1 (fr) 2014-10-29
CN104488090A (zh) 2015-04-01
AU2012357017B2 (en) 2016-04-14
JP2015502670A (ja) 2015-01-22
MX2014007392A (es) 2015-10-09
US20140338744A1 (en) 2014-11-20
FR2984769A1 (fr) 2013-06-28
JP6324904B2 (ja) 2018-05-16
WO2013092833A1 (fr) 2013-06-27
CN104488090B (zh) 2018-01-30
KR20140105603A (ko) 2014-09-01

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