MX2013002898A - Metodo mejorado para co-pulverizacion ionica aleaciones y compuestos utilizando una ordenacion de catodo doble de tipo c-mag y aparato correspondiente. - Google Patents

Metodo mejorado para co-pulverizacion ionica aleaciones y compuestos utilizando una ordenacion de catodo doble de tipo c-mag y aparato correspondiente.

Info

Publication number
MX2013002898A
MX2013002898A MX2013002898A MX2013002898A MX2013002898A MX 2013002898 A MX2013002898 A MX 2013002898A MX 2013002898 A MX2013002898 A MX 2013002898A MX 2013002898 A MX2013002898 A MX 2013002898A MX 2013002898 A MX2013002898 A MX 2013002898A
Authority
MX
Mexico
Prior art keywords
sputtering
targets
mag
dual
compounds
Prior art date
Application number
MX2013002898A
Other languages
English (en)
Other versions
MX351707B (es
Inventor
Richard Blacker
Anton Dietrich
Kevin O'connor
Original Assignee
Ct Luxembourgeois Rech Verre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ct Luxembourgeois Rech Verre filed Critical Ct Luxembourgeois Rech Verre
Publication of MX2013002898A publication Critical patent/MX2013002898A/es
Publication of MX351707B publication Critical patent/MX351707B/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

Ciertas modalidades ejemplares de esta invención se refieren a técnicas para la deposición por pulverización iónica de una(s) película(s) delgada(s) que incluye(n) dos o más materiales utilizando objetivos tales como los objetivos de pulverización iónica, cilíndricos, rotatorios, incluyendo un método y aparato. Los ensamblajes de barras magnéticas en el primer y segundo objetivos adyacentes de pulverización iónica están orientados de diferente manera. Las diferentes orientaciones de los ensamblajes de barras magnéticas permiten que el material del segundo objetivo sea pulverizado iónicamente sobre el primer objetivo, o viceversa. La mezcla de material en el primer objetivo, que incluye el material de pulverización iónica de tanto el primer objetivo como el segundo objetivo, entonces se pulveriza iónicamente sobre un substrato para formar una película delgada depositada por pulverización iónica que incluye una mezcla de materiales de pulverización iónica de los objetivos. La figura más representativa de la invención es la número 1.
MX2013002898A 2010-09-17 2011-06-01 Metodo mejorado para co-pulverizacion ionica aleaciones y compuestos utilizando una ordenacion de catodo doble de tipo c-mag y aparato correspondiente. MX351707B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/923,389 US20120067717A1 (en) 2010-09-17 2010-09-17 Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
PCT/US2011/000982 WO2012036718A1 (en) 2010-09-17 2011-06-01 Improved method of co-sputtering alloys and compounds using a dual c-mag cathode arrangement and corresponding apparatus

Publications (2)

Publication Number Publication Date
MX2013002898A true MX2013002898A (es) 2013-04-11
MX351707B MX351707B (es) 2017-10-26

Family

ID=44627283

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2013002898A MX351707B (es) 2010-09-17 2011-06-01 Metodo mejorado para co-pulverizacion ionica aleaciones y compuestos utilizando una ordenacion de catodo doble de tipo c-mag y aparato correspondiente.

Country Status (9)

Country Link
US (1) US20120067717A1 (es)
EP (1) EP2616566B1 (es)
BR (1) BR112013006338A2 (es)
ES (1) ES2673272T3 (es)
MX (1) MX351707B (es)
PL (1) PL2616566T3 (es)
RU (1) RU2578336C2 (es)
TR (1) TR201809669T4 (es)
WO (1) WO2012036718A1 (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105006501A (zh) * 2015-08-14 2015-10-28 厦门神科太阳能有限公司 Cigs基薄膜太阳能电池的制备方法及制备装置
RU2623944C1 (ru) * 2016-02-08 2017-06-29 Федеральное государственное бюджетное учреждение науки Институт металлургии и материаловедения им. А.А. Байкова Российской академии наук (ИМЕТ РАН) Способ получения композиционного пористого биоактивного покрытия
CN108018533A (zh) * 2017-11-24 2018-05-11 中国电子科技集团公司第四十八研究所 一种多层异靶材膜镀膜***及其镀膜方法
CN108977787B (zh) * 2018-09-17 2019-10-18 重庆大学 一种磁控溅射镀膜阴极结构
DE102020120424A1 (de) 2020-08-03 2022-02-03 VON ARDENNE Asset GmbH & Co. KG Sputtervorrichtung, Verfahren, Steuervorrichtung und Halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317006A (en) 1989-06-15 1994-05-31 Microelectronics And Computer Technology Corporation Cylindrical magnetron sputtering system
AU8320491A (en) * 1990-07-06 1992-02-04 Boc Group, Inc., The Method and apparatus for co-sputtering and cross-sputtering homogeneous films
US5262032A (en) 1991-05-28 1993-11-16 Leybold Aktiengesellschaft Sputtering apparatus with rotating target and target cooling
DE4125110C2 (de) 1991-07-30 1999-09-09 Leybold Ag Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
US5403458A (en) 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use
US5405517A (en) * 1993-12-06 1995-04-11 Curtis M. Lampkin Magnetron sputtering method and apparatus for compound thin films
US5527439A (en) 1995-01-23 1996-06-18 The Boc Group, Inc. Cylindrical magnetron shield structure
US5591314A (en) 1995-10-27 1997-01-07 Morgan; Steven V. Apparatus for affixing a rotating cylindrical magnetron target to a spindle
ES2257047T3 (es) * 1998-04-16 2006-07-16 Bekaert Advanced Coatings Nv. Medios para controlar la erosion y la pulverizacion del objetivo en un magnetron.
US6488824B1 (en) * 1998-11-06 2002-12-03 Raycom Technologies, Inc. Sputtering apparatus and process for high rate coatings
WO2002084702A2 (en) * 2001-01-16 2002-10-24 Lampkin Curtis M Sputtering deposition apparatus and method for depositing surface films
RU2242821C2 (ru) * 2002-10-17 2004-12-20 Институт сильноточной электроники СО РАН Магнетронная распылительная система
JP2006083408A (ja) * 2004-09-14 2006-03-30 Shin Meiwa Ind Co Ltd 真空成膜装置
EP1856712A2 (en) * 2005-01-13 2007-11-21 Cardinal CG Company Reduced maintenance sputtering chambers
DE102008034960A1 (de) * 2008-07-25 2010-01-28 Von Ardenne Anlagentechnik Gmbh Verfahren und Beschichtungskammer zur Beschichtung eines Substrats mit einer transparenten Metalloxid-Schicht

Also Published As

Publication number Publication date
RU2578336C2 (ru) 2016-03-27
US20120067717A1 (en) 2012-03-22
PL2616566T3 (pl) 2018-09-28
RU2013117115A (ru) 2014-10-27
TR201809669T4 (tr) 2018-07-23
ES2673272T3 (es) 2018-06-21
EP2616566B1 (en) 2018-04-11
WO2012036718A1 (en) 2012-03-22
BR112013006338A2 (pt) 2016-06-21
EP2616566A1 (en) 2013-07-24
MX351707B (es) 2017-10-26

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