MX2009006097A - Sistema y metodo para la formacion de un cristal. - Google Patents

Sistema y metodo para la formacion de un cristal.

Info

Publication number
MX2009006097A
MX2009006097A MX2009006097A MX2009006097A MX2009006097A MX 2009006097 A MX2009006097 A MX 2009006097A MX 2009006097 A MX2009006097 A MX 2009006097A MX 2009006097 A MX2009006097 A MX 2009006097A MX 2009006097 A MX2009006097 A MX 2009006097A
Authority
MX
Mexico
Prior art keywords
crystal
region
crucible
forming
impurities
Prior art date
Application number
MX2009006097A
Other languages
English (en)
Inventor
Weidong Huang
David Harvey
Richard Wallace
Emanuel Sachs
Leo Van Glabbeek
Original Assignee
Evergreen Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar Inc filed Critical Evergreen Solar Inc
Publication of MX2009006097A publication Critical patent/MX2009006097A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/005—Simultaneous pulling of more than one crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/06—Unidirectional solidification of eutectic materials by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Un sistema para producir un cristal formado de un material con impurezas tiene un crisol para contener al material; el crisol tiene, entre otras cosas, una región de cristal para la formación de cristales, una región de introducción para recibir al material, y una región de retiro para retirar una porción del material; el crisol está configurado para producir un flujo generalmente unidireccional del material (en forma líquida) desde la región de introducción hacia la región de retiro; este flujo generalmente unidireccional provoca que la región de retiro tenga una mayor concentración de impurezas que la región de introducción.
MX2009006097A 2006-12-06 2007-11-21 Sistema y metodo para la formacion de un cristal. MX2009006097A (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US87317706P 2006-12-06 2006-12-06
US92235507P 2007-04-06 2007-04-06
US11/741,372 US20080134964A1 (en) 2006-12-06 2007-04-27 System and Method of Forming a Crystal
PCT/US2007/085359 WO2008070458A1 (en) 2006-12-06 2007-11-21 System and method of forming a crystal

Publications (1)

Publication Number Publication Date
MX2009006097A true MX2009006097A (es) 2009-08-25

Family

ID=39243657

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2009006097A MX2009006097A (es) 2006-12-06 2007-11-21 Sistema y metodo para la formacion de un cristal.

Country Status (7)

Country Link
US (1) US20080134964A1 (es)
JP (1) JP2010512295A (es)
KR (1) KR20090086567A (es)
CA (1) CA2671483A1 (es)
DE (1) DE112007002987T5 (es)
MX (1) MX2009006097A (es)
WO (1) WO2008070458A1 (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2701822A1 (en) * 2007-06-14 2008-12-18 Evergreen Solar, Inc. Removable thermal control for ribbon crystal pulling furnaces
US8304057B2 (en) * 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
CA2697374A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon crystal string with extruded refractory material
US7855087B2 (en) * 2008-03-14 2010-12-21 Varian Semiconductor Equipment Associates, Inc. Floating sheet production apparatus and method
EP2324146B1 (en) * 2008-08-18 2013-05-29 Max Era, Inc. Method and apparatus for growing a ribbon crystal while controlling transport of gas borne contaminants across a ribbon surface
US20110210470A1 (en) * 2010-02-26 2011-09-01 6N Silicon Inc. Crucible and method for furnace capacity utilization
US20120125254A1 (en) * 2010-11-23 2012-05-24 Evergreen Solar, Inc. Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace
US20130047913A1 (en) * 2011-08-29 2013-02-28 Max Era, Inc. Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
US4627887A (en) * 1980-12-11 1986-12-09 Sachs Emanuel M Melt dumping in string stabilized ribbon growth
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
US4594229A (en) * 1981-02-25 1986-06-10 Emanuel M. Sachs Apparatus for melt growth of crystalline semiconductor sheets
JPH0753569B2 (ja) * 1986-08-07 1995-06-07 昭和アルミニウム株式会社 ケイ素の精製方法
US6090199A (en) * 1999-05-03 2000-07-18 Evergreen Solar, Inc. Continuous melt replenishment for crystal growth
US6200383B1 (en) * 1999-05-03 2001-03-13 Evergreen Solar, Inc. Melt depth control for semiconductor materials grown from a melt
US6780665B2 (en) * 2001-08-28 2004-08-24 Romain Louis Billiet Photovoltaic cells from silicon kerf
AU2003284253A1 (en) * 2002-10-18 2004-05-04 Evergreen Solar, Inc. Method and apparatus for crystal growth
US6814802B2 (en) * 2002-10-30 2004-11-09 Evergreen Solar, Inc. Method and apparatus for growing multiple crystalline ribbons from a single crucible

Also Published As

Publication number Publication date
WO2008070458A1 (en) 2008-06-12
KR20090086567A (ko) 2009-08-13
US20080134964A1 (en) 2008-06-12
DE112007002987T5 (de) 2010-02-04
CA2671483A1 (en) 2008-06-12
JP2010512295A (ja) 2010-04-22

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