MX159572A - Metodo para sintetizar un material composicionalmente variado - Google Patents
Metodo para sintetizar un material composicionalmente variadoInfo
- Publication number
- MX159572A MX159572A MX198813A MX19881383A MX159572A MX 159572 A MX159572 A MX 159572A MX 198813 A MX198813 A MX 198813A MX 19881383 A MX19881383 A MX 19881383A MX 159572 A MX159572 A MX 159572A
- Authority
- MX
- Mexico
- Prior art keywords
- synthesizing
- varied material
- compositionally varied
- compositionally
- varied
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/422,155 US4520039A (en) | 1982-09-23 | 1982-09-23 | Compositionally varied materials and method for synthesizing the materials |
Publications (1)
Publication Number | Publication Date |
---|---|
MX159572A true MX159572A (es) | 1989-07-06 |
Family
ID=23673622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX198813A MX159572A (es) | 1982-09-23 | 1983-09-23 | Metodo para sintetizar un material composicionalmente variado |
Country Status (11)
Country | Link |
---|---|
US (1) | US4520039A (es) |
EP (1) | EP0107356A3 (es) |
JP (1) | JPS5978527A (es) |
AU (1) | AU560015B2 (es) |
BR (1) | BR8305221A (es) |
CA (1) | CA1216133A (es) |
EG (1) | EG15982A (es) |
IL (1) | IL69755A (es) |
IN (1) | IN162125B (es) |
MX (1) | MX159572A (es) |
ZA (1) | ZA837014B (es) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4642144A (en) * | 1983-10-06 | 1987-02-10 | Exxon Research And Engineering Company | Proximity doping of amorphous semiconductors |
US4738135A (en) * | 1986-12-15 | 1988-04-19 | Ramsey Engineering Company | Method and apparatus for in situ assemblage of a strain sensor in erected structural elements |
GB8719794D0 (en) * | 1987-08-21 | 1987-09-30 | Scient Coatings Uk Ltd | Depositing surface layers on substrates |
US5200805A (en) * | 1987-12-28 | 1993-04-06 | Hughes Aircraft Company | Silicon carbide:metal carbide alloy semiconductor and method of making the same |
US5536591A (en) | 1990-04-26 | 1996-07-16 | Ovonic Battery Company, Inc. | Electrochemical hydrogen storage alloys for nickel metal hydride batteries |
GEP20002074B (en) * | 1992-05-19 | 2000-05-10 | Westaim Tech Inc Ca | Modified Material and Method for its Production |
US5681575A (en) | 1992-05-19 | 1997-10-28 | Westaim Technologies Inc. | Anti-microbial coating for medical devices |
US7433655B2 (en) * | 2000-03-24 | 2008-10-07 | Cymbet Corporation | Battery-operated wireless-communication apparatus and method |
US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US20040131760A1 (en) * | 2003-01-02 | 2004-07-08 | Stuart Shakespeare | Apparatus and method for depositing material onto multiple independently moving substrates in a chamber |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7250386B2 (en) * | 2003-07-18 | 2007-07-31 | Energy Conversion Devices, Inc. | Quantum limit catalysts and hydrogen storage materials |
US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
CN1957487A (zh) * | 2004-01-06 | 2007-05-02 | Cymbet公司 | 具有一个或者更多个可限定层的层式阻挡物结构和方法 |
US7776478B2 (en) * | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
WO2007011900A1 (en) * | 2005-07-15 | 2007-01-25 | Cymbet Corporation | Thin-film batteries with soft and hard electrolyte layers and method |
US8039727B2 (en) * | 2006-04-26 | 2011-10-18 | Cardiac Pacemakers, Inc. | Method and apparatus for shunt for in vivo thermoelectric power system |
US8538529B2 (en) * | 2006-04-26 | 2013-09-17 | Cardiac Pacemakers, Inc. | Power converter for use with implantable thermoelectric generator |
US8003879B2 (en) | 2006-04-26 | 2011-08-23 | Cardiac Pacemakers, Inc. | Method and apparatus for in vivo thermoelectric power system |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
WO2019173626A1 (en) | 2018-03-07 | 2019-09-12 | Space Charge, LLC | Thin-film solid-state energy-storage devices |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3117022A (en) * | 1960-09-06 | 1964-01-07 | Space Technhology Lab Inc | Deposition arrangement |
BE620882A (es) * | 1961-05-08 | |||
US3218203A (en) * | 1961-10-09 | 1965-11-16 | Monsanto Co | Altering proportions in vapor deposition process to form a mixed crystal graded energy gap |
US3434894A (en) * | 1965-10-06 | 1969-03-25 | Ion Physics Corp | Fabricating solid state devices by ion implantation |
US3573098A (en) * | 1968-05-09 | 1971-03-30 | Boeing Co | Ion beam deposition unit |
US3682729A (en) * | 1969-12-30 | 1972-08-08 | Ibm | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby |
US3734769A (en) * | 1970-08-06 | 1973-05-22 | T Hirschfeld | Method of forming microelements |
US3751310A (en) * | 1971-03-25 | 1973-08-07 | Bell Telephone Labor Inc | Germanium doped epitaxial films by the molecular beam method |
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US4177473A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | Amorphous semiconductor member and method of making the same |
US4177474A (en) * | 1977-05-18 | 1979-12-04 | Energy Conversion Devices, Inc. | High temperature amorphous semiconductor member and method of making the same |
US4342044A (en) * | 1978-03-08 | 1982-07-27 | Energy Conversion Devices, Inc. | Method for optimizing photoresponsive amorphous alloys and devices |
US4293621A (en) * | 1978-10-12 | 1981-10-06 | Nippon Hoso Kyokai | Recording medium |
FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US4261771A (en) * | 1979-10-31 | 1981-04-14 | Bell Telephone Laboratories, Incorporated | Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy |
DE3000305C2 (de) * | 1980-01-05 | 1982-12-23 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines elektrophotographischen Aufzeichnungsmaterials |
US4389973A (en) * | 1980-03-18 | 1983-06-28 | Oy Lohja Ab | Apparatus for performing growth of compound thin films |
US4336118A (en) * | 1980-03-21 | 1982-06-22 | Battelle Memorial Institute | Methods for making deposited films with improved microstructures |
-
1982
- 1982-09-23 US US06/422,155 patent/US4520039A/en not_active Expired - Lifetime
-
1983
- 1983-09-16 IL IL69755A patent/IL69755A/xx unknown
- 1983-09-21 EG EG578/83A patent/EG15982A/xx active
- 1983-09-21 ZA ZA837014A patent/ZA837014B/xx unknown
- 1983-09-22 JP JP58176098A patent/JPS5978527A/ja active Pending
- 1983-09-22 AU AU19384/83A patent/AU560015B2/en not_active Ceased
- 1983-09-23 CA CA000437432A patent/CA1216133A/en not_active Expired
- 1983-09-23 EP EP83305678A patent/EP0107356A3/en not_active Withdrawn
- 1983-09-23 BR BR8305221A patent/BR8305221A/pt unknown
- 1983-09-23 MX MX198813A patent/MX159572A/es unknown
- 1983-09-24 IN IN1168/CAL/83A patent/IN162125B/en unknown
Also Published As
Publication number | Publication date |
---|---|
EP0107356A2 (en) | 1984-05-02 |
EP0107356A3 (en) | 1986-11-26 |
ZA837014B (en) | 1984-05-30 |
IL69755A0 (en) | 1983-12-30 |
IL69755A (en) | 1986-12-31 |
CA1216133A (en) | 1987-01-06 |
AU1938483A (en) | 1984-04-12 |
JPS5978527A (ja) | 1984-05-07 |
EG15982A (en) | 1987-10-30 |
BR8305221A (pt) | 1984-05-02 |
IN162125B (es) | 1988-04-02 |
AU560015B2 (en) | 1987-03-26 |
US4520039A (en) | 1985-05-28 |
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