MD483Y - Process for producing a suspension of GaP nanoparticles - Google Patents

Process for producing a suspension of GaP nanoparticles

Info

Publication number
MD483Y
MD483Y MDS20110100A MDS20110100A MD483Y MD 483 Y MD483 Y MD 483Y MD S20110100 A MDS20110100 A MD S20110100A MD S20110100 A MDS20110100 A MD S20110100A MD 483 Y MD483 Y MD 483Y
Authority
MD
Moldova
Prior art keywords
suspension
nanoparticles
producing
gap
hours
Prior art date
Application number
MDS20110100A
Other languages
Moldavian (mo)
Romanian (ro)
Inventor
Emil Rusu
Serghei Piskin
Vyacheslav Ursaki
Mihai Iacob
John Balatto
Tatiana Gutsul
Serghei Pişkin
Veaceslav Ursachi
Tatiana Guţul
Original Assignee
Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm, Inst De Ing Electronic & Abreve & Scedil I Nanotehnologii D Ghi & Tcedil U Al A & Scedil M filed Critical Inst De Ing Electronica Si Nanotehnologii D Ghitu Al Asm
Priority to MDS20110100A priority Critical patent/MD483Z/en
Publication of MD483Y publication Critical patent/MD483Y/en
Publication of MD483Z publication Critical patent/MD483Z/en

Links

Abstract

The invention relates to the technology for production of GaP nanoparticles in the form of powder or colloidal suspensions, in particular to processes for producing nano-sized GaP particles.The process for producing a suspension of GaP nanoparticles includes the dissolution of sodium phosphide in toluene, separate dissolution of gallium acetylacetonate in toluene for 2 hours at the temperature of 90…100°C, mixing of solutions by ultrasonic vibrations within 4 hours, then addition in the produced solution of trioctylphosphine oxide. After 12 hours the suspension of nanoparticles is separated from the sediment. The atomic ratio of Ga:P is 1:(1.8…3.0).
MDS20110100A 2011-06-03 2011-06-03 Process for producing a suspension of GaP nanoparticles MD483Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20110100A MD483Z (en) 2011-06-03 2011-06-03 Process for producing a suspension of GaP nanoparticles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20110100A MD483Z (en) 2011-06-03 2011-06-03 Process for producing a suspension of GaP nanoparticles

Publications (2)

Publication Number Publication Date
MD483Y true MD483Y (en) 2012-02-29
MD483Z MD483Z (en) 2012-09-30

Family

ID=45815381

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20110100A MD483Z (en) 2011-06-03 2011-06-03 Process for producing a suspension of GaP nanoparticles

Country Status (1)

Country Link
MD (1) MD483Z (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110902660A (en) * 2019-11-06 2020-03-24 三峡大学 Preparation method of GaN nanowire lithium ion battery cathode material
  • 2011

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110902660A (en) * 2019-11-06 2020-03-24 三峡大学 Preparation method of GaN nanowire lithium ion battery cathode material

Also Published As

Publication number Publication date
MD483Z (en) 2012-09-30

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Legal Events

Date Code Title Description
KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)